Immediate Impact
6 standout
Citing Papers
Wurtzite and fluorite ferroelectric materials for electronic memory
2023 Standout
Two-dimensional materials for next-generation computing technologies
2020 Standout
Works of Yong-Gee Ng being referenced
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry
2012
Author Peers
| Author | Last Decade | Papers | Cites | |||||
|---|---|---|---|---|---|---|---|---|
| Yong-Gee Ng | 206 | 40 | 12 | 8 | 215 | |||
| S. Ohbayashi | 224 | 42 | 7 | 13 | 231 | |||
| Uddalak Bhattacharya | 140 | 16 | 9 | 11 | 147 | |||
| Jui-Jen Wu | 179 | 33 | 13 | 9 | 180 | |||
| Mikhail Popovich | 154 | 24 | 15 | 11 | 164 | |||
| G. Kitsukawa | 159 | 26 | 29 | 14 | 163 | |||
| Kazumasa Yanagisawa | 246 | 40 | 41 | 15 | 257 | |||
| Jyothi Velamala | 165 | 44 | 5 | 12 | 174 | |||
| Sumin Choi | 117 | 20 | 13 | 11 | 124 | |||
| Andrey V. Mezhiba | 206 | 38 | 21 | 7 | 216 | |||
| Pramod Kolar | 268 | 51 | 24 | 5 | 277 |
All Works
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