Standout Papers

Candela-class high-bright... 1991 2026 2002 2014 1994 1996 1995 1995 1992 1000 2.0k 3.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation benchmark for papers published in the same subfield and year, or reaches the top citation threshold in at least one of its specific research topics.

  1. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
    1994 3.1k citations Shuji Nakamura, Takashi Mukai et al. Applied Physics Letters profile →
  2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
    1996 2.1k citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
    1995 1.2k citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
    1995 896 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  5. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
    1992 890 citations Shuji Nakamura, Takashi Mukai et al. Japanese Journal of Applied Physics profile →
  6. Hole Compensation Mechanism of P-Type GaN Films
    1992 875 citations Shuji Nakamura, Naruhito Iwasa et al. Japanese Journal of Applied Physics profile →
  7. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
    1991 662 citations Shuji Nakamura, Takashi Mukai et al. Japanese Journal of Applied Physics profile →
  8. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
    1998 609 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  9. High-power InGaN/GaN double-heterostructure violet light emitting diodes
    1993 548 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  10. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
    1995 492 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  11. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
    1993 464 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  12. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
    1996 436 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  13. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
    1997 387 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  14. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
    1994 356 citations Shuji Nakamura, Takashi Mukai et al. Journal of Applied Physics profile →
  15. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
    1991 332 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  16. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
    1998 290 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  17. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
    1997 286 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  18. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
    1996 267 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  19. Blue InGaN-based laser diodes with an emission wavelength of 450 nm
    2000 227 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
  20. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
    1998 218 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
  21. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates
    1996 216 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →

Immediate Impact

37 by Nobel laureates 19 from Science/Nature 74 hit
Sub-graph 1 of 17

Citing Papers

Controllable p- and n-type behaviours in emissive perovskite semiconductors
2024 HitNature
Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics
2024 Hit
1 intermediate paper

Works of Masayuki Senoh being referenced

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 HitNobel
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 HitNobel
and 9 more

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Masayuki Senoh 14.7k 7.4k 7.0k 6.0k 5.7k 44 17.2k
Naruhito Iwasa 10.0k 0.7× 4.4k 0.6× 5.1k 0.7× 4.0k 0.7× 3.5k 0.6× 34 11.2k
Shin‐ichi Nagahama 10.0k 0.7× 4.1k 0.6× 5.6k 0.8× 3.7k 0.6× 3.6k 0.6× 102 11.2k
Takao Yamada 6.7k 0.5× 2.9k 0.4× 3.6k 0.5× 2.5k 0.4× 2.6k 0.5× 50 7.8k
Vincenzo Fiorentini 6.4k 0.4× 4.8k 0.6× 3.7k 0.5× 3.8k 0.6× 2.8k 0.5× 136 9.7k
John E. Northrup 5.8k 0.4× 5.9k 0.8× 6.7k 1.0× 3.0k 0.5× 7.5k 1.3× 181 15.2k
Yukio Narukawa 5.1k 0.3× 3.2k 0.4× 2.7k 0.4× 2.6k 0.4× 2.0k 0.4× 81 7.1k
J. I. Pánkové 3.4k 0.2× 6.6k 0.9× 3.4k 0.5× 2.2k 0.4× 7.7k 1.3× 168 11.9k
N. M. Johnson 5.1k 0.3× 3.3k 0.5× 3.1k 0.4× 2.5k 0.4× 4.7k 0.8× 228 8.7k
R. J. Molnar 5.9k 0.4× 2.9k 0.4× 2.5k 0.4× 3.1k 0.5× 3.8k 0.7× 175 7.9k
S. Strite 4.6k 0.3× 2.5k 0.3× 2.5k 0.3× 2.1k 0.3× 3.4k 0.6× 48 6.9k

All Works

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Rankless by CCL
2026