Standout Papers

A review of Ga2O3 materials,... 1999 2026 2008 2017 2.2k
  1. A review of Ga2O3 materials, processing, and devices (2018)
    S. J. Pearton, Jiancheng Yang et al. Applied Physics Reviews
  2. GaN: Processing, defects, and devices (1999)
    S. J. Pearton, J.C. Zolper et al. Journal of Applied Physics
  3. Wide band gap ferromagnetic semiconductors and oxides (2002)
    S. J. Pearton, C. R. Abernathy et al. Journal of Applied Physics
  4. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS (2018)
    S. J. Pearton, F. Ren et al. Journal of Applied Physics

Immediate Impact

8 by Nobel laureates 20 from Science/Nature 127 standout
Sub-graph 1 of 14

Citing Papers

Ultra-wide bandgap semiconductor Ga2O3 power diodes
2022 Standout
In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array
2022 Standout
25 intermediate papers

Works of F. Ren being referenced

A review of Ga2O3 materials, processing, and devices
2018 Standout
High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
2017
and 18 more

Author Peers

Author Last Decade Papers Cites
F. Ren 21211 13656 20358 15937 1.4k 37.1k
S. J. Pearton 38136 21968 34360 23515 2.1k 63.5k
M. Stutzmann 15542 10859 15867 5906 667 27.7k
Chris G. Van de Walle 29052 15610 40404 18587 539 56.9k
Vinayak P. Dravid 26481 2113 41516 9539 740 54.8k
H. Morkoç̌ 25354 16138 22452 12674 996 44.7k
Xiao Wei Sun 24086 2130 23313 7483 1.2k 37.4k
Yoshio Bando 31823 5247 61483 18130 1.2k 87.1k
Oliver G. Schmidt 19752 12127 11865 7262 954 45.5k
Lars Hultman 23520 4763 51981 8289 800 65.1k
Jin Zou 17509 2907 33035 5007 855 45.2k

All Works

Loading papers...

Rankless by CCL
2026