Immediate Impact

14 standout
Sub-graph 1 of 7

Citing Papers

Transistors based on two-dimensional materials for future integrated circuits
2021 Standout
High-entropy ceramics: Review of principles, production and applications
2021 Standout
2 intermediate papers

Works of D.H. Zhang being referenced

Study of copper diffusion into Ta and TaN barrier materials for MOS devices
2004
A new method for deposition of cubic Ta diffusion barrier for Cu metallization
2003

Author Peers

Author Last Decade Papers Cites
D.H. Zhang 271 153 127 42 350
Е. М. Труханов 182 194 70 56 356
Yasushi Nakasaki 294 60 170 30 352
M. Koike 255 171 61 30 382
J. T. Wetzel 219 103 152 33 387
M. S. Ameen 175 74 58 25 300
G. Jungk 240 202 61 53 397
F. Pierre 199 145 82 40 392
Insulation Division 218 120 46 29 335
Véronique Soulière 306 151 68 74 381
C. Dugautier 90 220 124 31 352

All Works

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Rankless by CCL
2026