Dai Okamoto

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation