Standout Papers

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction 1993 2026 2004 2015 668
  1. High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction (1993)
    M. Asif Khan, Amal R. Bhattarai et al. Applied Physics Letters

Immediate Impact

87 by Nobel laureates 29 from Science/Nature 113 standout
Sub-graph 1 of 14

Citing Papers

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications
2022 Standout
Van der Waals integration before and beyond two-dimensional materials
2019 StandoutNature
29 intermediate papers

Works of D. T. Olson being referenced

Schottky barrier photodetector based on Mg-doped p-type GaN films
1993
Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
1993
and 13 more

Author Peers

Author Last Decade Papers Cites
D. T. Olson 2921 1182 1397 1408 29 3.2k
P. Kozodoy 3499 1347 1754 1869 51 4.0k
J. N. Kuznia 3782 1499 1818 1870 50 4.2k
Mao Lin 2567 1513 1084 2076 30 4.0k
Masahiko Sano 3282 1577 1263 1355 42 3.9k
M. Asif Khan 2619 915 1182 1347 61 2.9k
B. A. Haskell 2780 1545 1279 696 45 3.0k
E. J. Tarsa 1774 1213 1074 971 30 2.4k
Tsvetanka Zheleva 1963 1394 995 1171 68 2.9k
M. L. Nakarmi 2821 1551 1838 949 62 3.4k
J. Graul 2354 1355 1367 854 49 2.9k

All Works

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