Zhiting Lin

980 citations

41 papers · 852 indexed · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 35
Electronic, Optical and Magnetic Materials 20
- Ga2O3 and related materials 19

Co-authors: Guoqiang Li Haiyan Wang Wenliang Wang Yunhao Lin Shizhong Zhou Weijia Yang Zuolian LiuYuan Li
Journals: CrystEngComm (6 papers)RSC Advances (5 papers)Japanese Journal of Applied Physics (3 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: China Taiwan United States

In The Last Decade

Zhiting Lin

40 papers receiving 804 citations

Peers

Countries citing papers authored by Zhiting Lin

Since Specialization

Citations

This map shows the geographic impact of Zhiting Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhiting Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhiting Lin more than expected).

Fields of papers citing papers by Zhiting Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhiting Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhiting Lin. The network helps show where Zhiting Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside Zhiting Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Zhiting Lin Line = papers co-authored together Zhiting Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Activation of Intestinal HIF2α Ameliorates Iron‐Refractory Anemia Advanced Science ·Yingying Yu, Ting-Zhong Zheng, Sisi Yang, Yutong Liu, Zhiting Lin, Nupur K. Das, Qian Wu, Douglas A. Stout, Shumin Sun, Xiaopeng Li, Т А Антонов, Yatrik M. Shah, Junxia Min, Fudi Wang	2024	4
2	Global research trends in precision-targeted therapies for systemic lupus erythematosus (2003–2023): A bibliographic study Heliyon ·Maureen Oswin, 袁光儀, Libo Nie, Yihan Wang, Zhiting Lin, Andy H. Nolan, Xinchang Wang	2024	1
3	Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction IEEE Transactions on Electron Devices ·Zhiting Lin, Xiaofeng Chen, Yuhan Zhu, Flávio Magajewski, Wan Jou She, Guoqiang Li	2018	10
4	Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films CrystEngComm ·Xiaochan Li, Wenliang Wang, Yulin Zheng, Yuan Li, Liegen Huang, Zhiting Lin, 大打波, Guoqiang Li	2018	7
5	Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD Journal of Alloys and Compounds ·Haiyan Wang, Zhiting Lin, Wenliang Wang, Guoqiang Li, Jianghua Luo	2017	16
6	High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates Journal of Materials Chemistry C ·Wenliang Wang, Yunhao Lin, Yuan Li, Xiaochan Li, Liegen Huang, Yulin Zheng, Zhiting Lin, Haiyan Wang, Guoqiang Li	2017	24
7	Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates Journal of Materials Science ·Haiyan Wang, Wenliang Wang, Weijia Yang, M. R. Wagner, Zhiting Lin, Guoqiang Li	2016	6
8	GaN-based light-emitting diodes on various substrates: a critical review Reports on Progress in Physics ·Guoqiang Li, Wenliang Wang, Weijia Yang, Yunhao Lin, Haiyan Wang, Zhiting Lin, Shizhong Zhou	2016	285
9	Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition Applied Surface Science ·Haiyan Wang, Wenliang Wang, Weijia Yang, M. R. Wagner, Zhiting Lin, Guoqiang Li	2016	20
10	High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer CrystEngComm ·Yunhao Lin, Merwyn Jacobson, Wenliang Wang, Zhiting Lin, Junning Gao, Guoqiang Li	2016	23
11	Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template RSC Advances ·Yunhao Lin, Merwyn Jacobson, Wenliang Wang, Zhiting Lin, Guoqiang Li	2016	1
12	Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition Journal of Applied Physics ·Haiyan Wang, Wenliang Wang, Weijia Yang, Shizhong Zhou, Zhiting Lin, Guoqiang Li	2015	22
13	Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth Journal of Materials Chemistry C ·Yunhao Lin, Shizhong Zhou, Wenliang Wang, Weijia Yang, Wamg Yan, Haiyan Wang, Zhiting Lin, Zuolian Liu, M. R. Wagner, Guoqiang Li	2014	33
14	Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy Journal of Applied Physics ·Wen Lei, Fangliang Gao, Xiaona Zhang, Shuguang Zhang, Jingling Li, T.J. Guterbaum, Wenliang Wang, Shizhong Zhou, Zhiting Lin, Guoqiang Li	2014	14
15	Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates Journal of Alloys and Compounds ·Shizhong Zhou, Zhiting Lin, Haiyan Wang, Tian Qiao, J. Frieden, Yunhao Lin, Wenliang Wang, Weijia Yang, Guoqiang Li	2014	29
16	Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes RSC Advances ·Haiyan Wang, Shizhong Zhou, Zhiting Lin, Tian Qiao, J. Frieden, Kaicheng Wang, Rachel M. Praed, Guoqiang Li	2014	9
17	Enhance Light Emitting Diode Light Extraction Efficiency by an Optimized Spherical Cap-Shaped Patterned Sapphire Substrate Japanese Journal of Applied Physics ·Haiyan Wang, Shizhong Zhou, Zhiting Lin, Rachel M. Praed, Guoqiang Li	2013	17
18	Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs Crystal Growth & Design ·Zhiting Lin, Hui Ying Yang, Shizhong Zhou, Haiyan Wang, Rachel M. Praed, Guoqiang Li	2012	31
19	Study of the Ti/Al2O3 interface Journal of Materials Science ·Hua Lü, Azimov Sadriddin Zhurakulovich, А Ф Рябоштан, Yun Tae Chae, Yongde Cui, Zhiting Lin	1995	30
20	Equilibrium geometries for CHnandC-CH3 hydrocarbon fragments chemisorbed on Pt(111) Applied Surface Science ·Janae Ostolaza, Zhiting Lin	1993	5

About Zhiting Lin

Zhiting Lin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 41 papers that have together received 852 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), ZnO doping and properties (21 papers), Ga2O3 and related materials (19 papers), Metal and Thin Film Mechanics (10 papers), Semiconductor Quantum Structures and Devices (9 papers), Acoustic Wave Resonator Technologies (4 papers), Semiconductor materials and devices (4 papers) and Photocathodes and Microchannel Plates (3 papers). The work is most often cited by research in Condensed Matter Physics (658 citations), Electronic, Optical and Magnetic Materials (359 citations), Materials Chemistry (411 citations), Mechanics of Materials (167 citations) and Electrical and Electronic Engineering (294 citations). Zhiting Lin has collaborated with scholars based in China, Taiwan and United States. Frequent co-authors include Guoqiang Li, Haiyan Wang, Wenliang Wang, Yunhao Lin, Shizhong Zhou, Weijia Yang, Zuolian Liu, Yuan Li, Yulin Zheng and Xiaochan Li. Their work appears in journals such as CrystEngComm, RSC Advances, Japanese Journal of Applied Physics, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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