Zhenghao Gan

455 total citations
35 papers, 345 citations indexed

About

Zhenghao Gan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Zhenghao Gan has authored 35 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 11 papers in Electronic, Optical and Magnetic Materials and 10 papers in Mechanics of Materials. Recurrent topics in Zhenghao Gan's work include Semiconductor materials and devices (19 papers), Copper Interconnects and Reliability (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Zhenghao Gan is often cited by papers focused on Semiconductor materials and devices (19 papers), Copper Interconnects and Reliability (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Zhenghao Gan collaborates with scholars based in Singapore, China and Italy. Zhenghao Gan's co-authors include Zhong Chen, Cher Ming Tan, Changzheng Wang, Subodh G. Mhaisalkar, Sam Zhang, Wei Li, Beng Kang Tay, Wei Shao, Guoqing Yu and Zhe Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Zhenghao Gan

32 papers receiving 323 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Zhenghao Gan Singapore	12	195	126	97	88	53	35	345
Kong Boon Yeap United States	13	241 1.2×	120 1.0×	113 1.2×	79 0.9×	18 0.3×	38	394
Chizi Liu China	11	136 0.7×	273 2.2×	38 0.4×	221 2.5×	40 0.8×	34	373
K. Kubota Japan	10	323 1.7×	226 1.8×	71 0.7×	224 2.5×	25 0.5×	42	545
Jing‐Cheng Lin Taiwan	10	308 1.6×	177 1.4×	171 1.8×	102 1.2×	13 0.2×	17	402
W. Robl Germany	11	172 0.9×	159 1.3×	111 1.1×	138 1.6×	10 0.2×	26	345
Baptiste Girault France	13	129 0.7×	167 1.3×	57 0.6×	223 2.5×	34 0.6×	35	445
Fred Fietzke Germany	10	213 1.1×	322 2.6×	29 0.3×	247 2.8×	67 1.3×	21	431
Chuan-Lu Li China	9	207 1.1×	36 0.3×	181 1.9×	130 1.5×	56 1.1×	15	429
S. Orain France	10	247 1.3×	68 0.5×	40 0.4×	75 0.9×	15 0.3×	24	352
Maria A. Kuczmarski United States	12	208 1.1×	28 0.2×	51 0.5×	87 1.0×	152 2.9×	31	452

Countries citing papers authored by Zhenghao Gan

Since Specialization

Citations

This map shows the geographic impact of Zhenghao Gan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhenghao Gan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhenghao Gan more than expected).

Fields of papers citing papers by Zhenghao Gan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhenghao Gan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhenghao Gan. The network helps show where Zhenghao Gan may publish in the future.

Co-authorship network of co-authors of Zhenghao Gan

This figure shows the co-authorship network connecting the top 25 collaborators of Zhenghao Gan. A scholar is included among the top collaborators of Zhenghao Gan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhenghao Gan. Zhenghao Gan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sun, Yongsheng, et al.. (2018). Aging Impacts on SOC Timing in Advanced FinFET Technologies. 2 indexed citations

Ren, Pengpeng, et al.. (2018). New Insights into the Off-state Stress Induced Degradation in Ultra-scaled FinFET Technology. 3 indexed citations

Ren, Pengpeng, Changze Liu, Zhuoqing Yu, et al.. (2018). New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. P–CR.3. 2 indexed citations

Gan, Zhenghao, Changzheng Wang, & Zhong Chen. (2018). Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition. Surfaces. 1(1). 59–72. 42 indexed citations

Cheng, Jen‐Hao, et al.. (2014). Novel RF CMOS symmetric inductor with stacked multi layer/finger structure. 44. 1–3. 2 indexed citations

Wang, Xinpeng, et al.. (2013). Applying Uniform Design of Experiment in Tri-Layer-Based Trench Etch for EM Lifetime Performance Enhancement. ECS Transactions. 52(1). 295–300. 2 indexed citations

Gan, Zhenghao, et al.. (2012). The Effects of Offset Spacer on nMOSFET Hot-Carrier Lifetime. ECS Transactions. 44(1). 135–139. 1 indexed citations

Tan, Cher Ming, et al.. (2011). Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections. RePEc: Research Papers in Economics. 6 indexed citations

Tan, Cher Ming, et al.. (2011). Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections. DIAL (Catholic University of Leuven). 19 indexed citations

10.

Gan, Zhenghao, et al.. (2011). Effects of nitrogen implant on ultra-thin gate dielectric breakdown. 1–2. 1 indexed citations

11.

Gan, Zhenghao, Andriy Gusak, Wei Shao, et al.. (2007). Analytical modeling of reservoir effect on electromigration in Cu interconnects. Journal of materials research/Pratt's guide to venture capital sources. 22(1). 152–156. 2 indexed citations

12.

Vairagar, A. V., Zhenghao Gan, Wei Shao, et al.. (2006). Improvement of Electromigration Lifetime of Submicrometer Dual-Damascene Cu Interconnects Through Surface Engineering. Journal of The Electrochemical Society. 153(9). G840–G840. 23 indexed citations

13.

Gan, Zhenghao, Zhong Chen, Subodh G. Mhaisalkar, et al.. (2006). Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface. Applied Physics Letters. 88(23). 3 indexed citations

14.

Chen, Zhong & Zhenghao Gan. (2006). Fracture toughness measurement of thin films on compliant substrate using controlled buckling test. Thin Solid Films. 515(6). 3305–3309. 19 indexed citations

15.

Zhang, Sam, et al.. (2006). Parametric study of sputtered Sr-deficient SrBi2Ta2O9 thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(6). 1992–1998. 4 indexed citations

16.

Tan, Cher Ming, et al.. (2004). New useful information from simple forward I-V measurement of a power diode. International Power Electronics and Motion Control Conference. 2. 851–853. 2 indexed citations

17.

Gan, Zhenghao, et al.. (2004). Experiments and inelastic finite element analyses of plasma sprayed graded coatings under cyclic thermal shock. Materials Science and Engineering A. 385(1-2). 314–324. 18 indexed citations

18.

Gan, Zhenghao, et al.. (2004). Deposition-induced residual stresses in plasma-sprayed coatings. Surface and Coatings Technology. 187(2-3). 307–319. 39 indexed citations

19.

Gan, Zhenghao & Cher Ming Tan. (2003). Thermally induced stress in partial SOI structure during high temperature processing. Microelectronic Engineering. 71(2). 150–162. 5 indexed citations

20.

Tan, Cher Ming, et al.. (2003). Temperature and stress distribution in the SOI structure during fabrication. IEEE Transactions on Semiconductor Manufacturing. 16(2). 314–318. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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