Y.T. Wang

427 total citations
38 papers, 312 citations indexed

About

Y.T. Wang is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Y.T. Wang has authored 38 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 15 papers in Atomic and Molecular Physics, and Optics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Y.T. Wang's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (12 papers) and Ga2O3 and related materials (12 papers). Y.T. Wang is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (12 papers) and Ga2O3 and related materials (12 papers). Y.T. Wang collaborates with scholars based in China, Switzerland and France. Y.T. Wang's co-authors include Hui Yang, J. Chen, J.J. Zhu, Guili Feng, Xiaoming Shen, Junwu Liang, Zhihong Feng, Yong Huang, Qian Sun and Hongmei Wang and has published in prestigious journals such as Advanced Functional Materials, Applied Surface Science and Journal of Alloys and Compounds.

In The Last Decade

Y.T. Wang

34 papers receiving 304 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y.T. Wang China 10 202 156 143 65 60 38 312
Y. Noro Japan 13 269 1.3× 221 1.4× 350 2.4× 87 1.3× 85 1.4× 60 503
Shijie Xu Singapore 12 134 0.7× 287 1.8× 168 1.2× 205 3.2× 109 1.8× 40 447
Terry L. Aselage United States 7 252 1.2× 220 1.4× 86 0.6× 20 0.3× 54 0.9× 10 405
X. Li United States 12 398 2.0× 227 1.5× 124 0.9× 88 1.4× 52 0.9× 15 459
Y. L. Liu China 10 69 0.3× 147 0.9× 109 0.8× 156 2.4× 62 1.0× 15 315
Kiyoshi Sawano Japan 11 367 1.8× 83 0.5× 163 1.1× 23 0.4× 114 1.9× 23 411
T. L. Peterson United States 11 236 1.2× 95 0.6× 127 0.9× 53 0.8× 72 1.2× 27 340
R. Pietri United States 8 191 0.9× 141 0.9× 159 1.1× 52 0.8× 50 0.8× 16 339
Takeshi Kusumori Japan 10 155 0.8× 212 1.4× 123 0.9× 135 2.1× 62 1.0× 33 326
G. Coffe France 7 208 1.0× 108 0.7× 165 1.2× 25 0.4× 74 1.2× 9 355

Countries citing papers authored by Y.T. Wang

Since Specialization
Citations

This map shows the geographic impact of Y.T. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y.T. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y.T. Wang more than expected).

Fields of papers citing papers by Y.T. Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y.T. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y.T. Wang. The network helps show where Y.T. Wang may publish in the future.

Co-authorship network of co-authors of Y.T. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Y.T. Wang. A scholar is included among the top collaborators of Y.T. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y.T. Wang. Y.T. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chaikovska, I., R. Chehab, Y.T. Wang, et al.. (2025). FCC-ee positron source from conventional to crystal-based. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 1075. 170412–170412.
2.
Zhu, Chaoyi, Y.T. Wang, Changsong Gao, et al.. (2025). Optically Controlled MoS 2 Phase Conversion Memory-Based In-Sensor Computing Enables Higher Information Security. ACS Photonics. 12(12). 6946–6956.
3.
Cui, Yongpeng, Wenting Feng, Lina Ge, et al.. (2025). Tailoring twisted WS2 structure with strain-self-relaxation for ultra-high capacity potassium ion batteries. Journal of Energy Chemistry. 114. 319–327.
4.
Hou, Shanyue, Y.T. Wang, Lukas Pfeifer, et al.. (2025). Enhancing Indoor Photovoltaic Efficiency to 37.6% Through Triple Passivation Reassembly and n‐Type to p‐Type Modulation in Wide Bandgap Perovskites. Advanced Functional Materials. 35(40). 2 indexed citations
5.
Wang, Y.T., Bo Wu, Ting Fu, et al.. (2025). Dual‐Mode Optoelectronic Neuromorphic Memory for Complex Edge Detection and Recognition. Advanced Functional Materials. 36(7). 2 indexed citations
6.
Wang, Na, et al.. (2024). Impedance driven collective effects in CEPC. Journal of Instrumentation. 19(2). P02016–P02016. 1 indexed citations
7.
Wang, Y.T., Na Wang, Haisheng Xu, & Gang Xu. (2022). Tune shift due to the quadrupolar resistive-wall impedance of an elliptical beam pipe. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 1029. 166414–166414. 1 indexed citations
8.
Wang, Y.T., et al.. (2019). Optimum shear stability at intermittent-to-smooth transition of plastic flow in metallic glasses at cryogenic temperatures. Materialia. 9. 100559–100559. 8 indexed citations
9.
Wang, Y.T., et al.. (2018). Effect of resonance for CP asymmetry of the decay process B¯s→Pπ+π− in perturbative QCD. Physical review. D. 98(1). 7 indexed citations
10.
Majid, Abdul, Akbar Ali, J.J. Zhu, Y.T. Wang, & Hui Yang. (2008). An evidence of defect gettering in GaN. Physica B Condensed Matter. 403(13-16). 2495–2499. 5 indexed citations
11.
Huang, Yong, Hongmei Wang, Qian Sun, et al.. (2006). Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition. Journal of Crystal Growth. 293(2). 269–272. 8 indexed citations
12.
Wang, Hongmei, Yong Huang, Qian Sun, et al.. (2006). Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition. Materials Letters. 61(2). 516–519. 2 indexed citations
13.
Huang, Yong, Hongmei Wang, Qian Sun, et al.. (2004). Low-temperature growth of InN by MOCVD and its characterization. Journal of Crystal Growth. 276(1-2). 13–18. 30 indexed citations
14.
Zhang, Juchen, M. F. Wu, Jiancheng Wang, et al.. (2004). A study of the degree of relaxation of AlGaN epilayers on GaN template. Journal of Crystal Growth. 270(3-4). 289–294. 8 indexed citations
15.
Feng, Guili, Xiaoming Shen, J.J. Zhu, et al.. (2003). High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers. Journal of Crystal Growth. 250(3-4). 354–358. 1 indexed citations
16.
Zhang, Shuxiao, Jie Zhu, Xiaoming Shen, et al.. (2003). Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD. Journal of Crystal Growth. 256(3-4). 248–253. 10 indexed citations
17.
Chen, J., Shuxiao Zhang, J.J. Zhu, et al.. (2003). Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate. Journal of Crystal Growth. 254(3-4). 348–352. 26 indexed citations
18.
Zheng, Xiantong, Y.T. Wang, Zhihong Feng, et al.. (2003). Method for measurement of lattice parameter of cubic GaN layers on GaAs (001). Journal of Crystal Growth. 250(3-4). 345–348. 38 indexed citations
19.
Feng, Guili, Xiantong Zheng, Y. Fu, et al.. (2002). Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching. Journal of Crystal Growth. 240(3-4). 368–372. 10 indexed citations
20.
Pan, Z., Y.T. Wang, Lianhe Li, et al.. (2000). X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1−x/GaAs(001) sandwiched structures. Journal of Crystal Growth. 217(1-2). 26–32. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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