Yang Geng

557 total citations
18 papers, 496 citations indexed

About

Yang Geng is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yang Geng has authored 18 papers receiving a total of 496 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Materials Chemistry, 11 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yang Geng's work include Semiconductor materials and devices (10 papers), ZnO doping and properties (10 papers) and Ga2O3 and related materials (5 papers). Yang Geng is often cited by papers focused on Semiconductor materials and devices (10 papers), ZnO doping and properties (10 papers) and Ga2O3 and related materials (5 papers). Yang Geng collaborates with scholars based in China, Germany and South Korea. Yang Geng's co-authors include Shi‐Jin Ding, Qingqing Sun, Hong-Liang Lü, David Wei Zhang, Yuan Zhang, David Wei Zhang, Zhiyuan Ye, David Wei Zhang, Peng Zhou and Wen Yang and has published in prestigious journals such as Scientific Reports, The Journal of Physical Chemistry C and Renewable Energy.

In The Last Decade

Yang Geng

17 papers receiving 479 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yang Geng China	13	410	345	91	44	36	18	496
Jinpeng Lv China	14	475 1.2×	246 0.7×	172 1.9×	59 1.3×	35 1.0×	26	547
Xiurong Qu China	9	315 0.8×	191 0.6×	76 0.8×	18 0.4×	27 0.8×	21	353
R. Reshmi Krishnan India	14	275 0.7×	212 0.6×	55 0.6×	65 1.5×	24 0.7×	30	342
Xiaoning Guan China	13	320 0.8×	283 0.8×	67 0.7×	15 0.3×	20 0.6×	62	440
Ramcharan Meena India	10	362 0.9×	184 0.5×	120 1.3×	60 1.4×	51 1.4×	58	457
Keyue Wu China	14	363 0.9×	263 0.8×	77 0.8×	49 1.1×	98 2.7×	30	469
Haisheng San China	11	261 0.6×	135 0.4×	53 0.6×	24 0.5×	48 1.3×	30	406
Maria Isabel Pintor‐Monroy United States	13	294 0.7×	265 0.8×	139 1.5×	86 2.0×	21 0.6×	25	423
Sang Ok Yoon South Korea	12	351 0.9×	235 0.7×	73 0.8×	22 0.5×	39 1.1×	24	404
Baltej Singh India	15	353 0.9×	572 1.7×	61 0.7×	39 0.9×	12 0.3×	42	736

Countries citing papers authored by Yang Geng

Since Specialization

Citations

This map shows the geographic impact of Yang Geng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yang Geng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yang Geng more than expected).

Fields of papers citing papers by Yang Geng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yang Geng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yang Geng. The network helps show where Yang Geng may publish in the future.

Co-authorship network of co-authors of Yang Geng

This figure shows the co-authorship network connecting the top 25 collaborators of Yang Geng. A scholar is included among the top collaborators of Yang Geng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yang Geng. Yang Geng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Geng, Yang, et al.. (2025). Synthesis of Mo, N-doped carbon dots for the fluorescence detection of Cr ₂ O ₇ ²⁻ and luteolin and their application in anti-counterfeiting. RSC Advances. 15(25). 19696–19703.

Xu, Nuo, Jiacheng Wang, Yubo Cui, et al.. (2024). Butterfly wing-inspired microstructured film with high reflectivity for efficient passive radiative cooling. Renewable Energy. 229. 120732–120732. 7 indexed citations

Yang, Wen, Michael Fronk, Yang Geng, et al.. (2015). Optical properties and bandgap evolution of ALD HfSiOx films. Nanoscale Research Letters. 10(1). 32–32. 12 indexed citations

Yang, Wen, Qingqing Sun, Yang Geng, et al.. (2015). The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility. Scientific Reports. 5(1). 11921–11921. 78 indexed citations

Lü, Hong-Liang, Yuan Zhang, Tao Wang, et al.. (2015). Bandgap narrowing and conductivity evolution of atomic-layer-deposited ZnO:Cu thin films under rapid thermal annealing. Journal of Alloys and Compounds. 638. 133–135. 20 indexed citations

Geng, Yang, Hong-Liang Lü, Qingqing Sun, et al.. (2014). Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O₂. IEEE Electron Device Letters. 35(12). 1266–1268. 23 indexed citations

Lü, Hong-Liang, Yang Geng, Yuan Zhang, et al.. (2014). Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate. Applied Physics A. 117(3). 1479–1484. 2 indexed citations

Lü, Hong-Liang, Yang Geng, Zhiyuan Ye, et al.. (2013). Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition. Nanoscale Research Letters. 8(1). 107–107. 35 indexed citations

Ye, Zhiyuan, Hong-Liang Lü, Yang Geng, et al.. (2013). Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition. Nanoscale Research Letters. 8(1). 108–108. 97 indexed citations

10.

Sun, Jiabao, et al.. (2013). Equivalent oxide thickness scaling of Al₂O₃/Ge metal—oxide—semiconductor capacitors with ozone post oxidation. Chinese Physics B. 22(6). 67701–67701. 12 indexed citations

11.

Geng, Yang, Wen Yang, Yuan Zhang, et al.. (2013). Effect of ozone treatment on the optical and electrical properties of HfSiO thin films. Applied Physics A. 116(1). 259–263. 2 indexed citations

12.

Geng, Yang, Hong-Liang Lü, Yuan Zhang, et al.. (2013). Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition. Journal of Alloys and Compounds. 577. 340–344. 22 indexed citations

13.

Geng, Yang, Wen Yang, Qingqing Sun, et al.. (2013). Structural, optical, and electrical properties of Hf-doped ZnO films deposited by atomic layer deposition. Surface and Coatings Technology. 232. 41–45. 36 indexed citations

14.

Zhang, Yuan, Hong-Liang Lü, Yang Geng, et al.. (2013). Impact of rapid thermal annealing on structural and electrical properties of ZnO thin films grown atomic layer deposition on GaAs substrates. Vacuum. 103. 1–4. 13 indexed citations

15.

Geng, Yang, Lin Chen, Qingqing Sun, et al.. (2012). Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing. Thin Solid Films. 529. 230–233. 6 indexed citations

16.

Geng, Yang, et al.. (2012). Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition. ECS Journal of Solid State Science and Technology. 1(3). N45–N48. 13 indexed citations

17.

Geng, Yang, Li Guo, Qingqing Sun, et al.. (2011). Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition. The Journal of Physical Chemistry C. 115(25). 12317–12321. 94 indexed citations

18.

Fu, Zuoling, Yang Geng, Hongwei Chen, et al.. (2008). Combustion synthesis and luminescent properties of the Eu3+-doped yttrium oxysulfide nanocrystalline. Optical Materials. 31(1). 58–62. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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