Wei-Chou Hsu

614 total citations
47 papers, 531 citations indexed

About

Wei-Chou Hsu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Wei-Chou Hsu has authored 47 papers receiving a total of 531 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 20 papers in Condensed Matter Physics. Recurrent topics in Wei-Chou Hsu's work include Semiconductor materials and devices (31 papers), GaN-based semiconductor devices and materials (20 papers) and Semiconductor Quantum Structures and Devices (19 papers). Wei-Chou Hsu is often cited by papers focused on Semiconductor materials and devices (31 papers), GaN-based semiconductor devices and materials (20 papers) and Semiconductor Quantum Structures and Devices (19 papers). Wei-Chou Hsu collaborates with scholars based in Taiwan, China and Singapore. Wei-Chou Hsu's co-authors include Wen-Chau Liu, Huey-Ing Chen, Ching-Sung Lee, Tsung-Han Tsai, Kun‐Wei Lin, En‐Ping Yao, Qi Chen, Jing Gao, Min Cai and Gang Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Chemistry Chemical Physics.

In The Last Decade

Wei-Chou Hsu

44 papers receiving 524 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wei-Chou Hsu Taiwan 11 439 170 139 115 102 47 531
Bong Ho Kim South Korea 12 437 1.0× 62 0.4× 49 0.4× 259 2.3× 36 0.4× 70 589
Qianlan Hu China 16 804 1.8× 106 0.6× 65 0.5× 543 4.7× 74 0.7× 39 1.0k
J. S. Bhat India 16 277 0.6× 48 0.3× 201 1.4× 298 2.6× 76 0.7× 39 587
Tiaoyang Li China 16 761 1.7× 96 0.6× 80 0.6× 692 6.0× 49 0.5× 27 1.0k
Cameron Danesh United States 7 217 0.5× 148 0.9× 42 0.3× 128 1.1× 43 0.4× 12 348
Huaiwen Yang China 16 298 0.7× 173 1.0× 207 1.5× 364 3.2× 58 0.6× 50 704
Jean‐Marc Routoure France 16 336 0.8× 112 0.7× 86 0.6× 149 1.3× 37 0.4× 53 522
Peisong Wu China 13 560 1.3× 26 0.2× 89 0.6× 552 4.8× 76 0.7× 18 821
J.J. Liou United States 16 1.4k 3.1× 68 0.4× 236 1.7× 222 1.9× 33 0.3× 68 1.5k
Junho Sung South Korea 11 162 0.4× 61 0.4× 111 0.8× 58 0.5× 57 0.6× 40 402

Countries citing papers authored by Wei-Chou Hsu

Since Specialization
Citations

This map shows the geographic impact of Wei-Chou Hsu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei-Chou Hsu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei-Chou Hsu more than expected).

Fields of papers citing papers by Wei-Chou Hsu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei-Chou Hsu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei-Chou Hsu. The network helps show where Wei-Chou Hsu may publish in the future.

Co-authorship network of co-authors of Wei-Chou Hsu

This figure shows the co-authorship network connecting the top 25 collaborators of Wei-Chou Hsu. A scholar is included among the top collaborators of Wei-Chou Hsu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wei-Chou Hsu. Wei-Chou Hsu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cheng, Ching‐Yu, et al.. (2025). Heteroepitaxial Growth of Sn δ-Doped β-Ga₂O₃ MOSFETs on c-Plane Sapphire via Nonvacuum Mist-CVD Process. IEEE Transactions on Electron Devices. 72(3). 996–1001.
2.
Lee, Ching-Sung, et al.. (2020). Improved Electrical and Deep-UV Sensing Characteristics of Al 2 O 3 -Dielectric AlGaN/AlN/SiC MOS-HFETs. ECS Journal of Solid State Science and Technology. 9(10). 105002–105002. 3 indexed citations
3.
Lee, Ching-Sung, et al.. (2017). Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique. Semiconductor Science and Technology. 32(5). 55012–55012. 6 indexed citations
4.
Lee, Ching-Sung, et al.. (2017). Comparative studies of normally-off Al 0.26 Ga 0.74 N/AlN/GaN/Si high electron mobility transistors with different gate structures. Materials Science in Semiconductor Processing. 66. 39–43. 3 indexed citations
5.
Lee, Ching-Sung, et al.. (2017). Al2O3-Passivated Graded-Barrier AlxGa1-xN/AlN/GaN/Si Heterostructure Field-Effect Transistor by Hydrogen Peroxide Oxidization Method. ECS Journal of Solid State Science and Technology. 6(12). Q166–Q170. 2 indexed citations
6.
Lee, Ching-Sung, et al.. (2016). Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique. Semiconductor Science and Technology. 31(5). 55012–55012. 5 indexed citations
7.
Lee, Ching-Sung, et al.. (2014). TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition. IEEE Electron Device Letters. 35(11). 1091–1093. 24 indexed citations
8.
Lee, Ching-Sung, et al.. (2014). Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation. Superlattices and Microstructures. 72. 194–203. 9 indexed citations
9.
Hsu, Wei-Chou, et al.. (2014). Al2O3-Passivated AlGaN/GaN HEMTs by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition Technique. IEEE Electron Device Letters. 35(9). 903–905. 30 indexed citations
10.
Lee, Ching-Sung, et al.. (2012). Investigations on Al0.2Ga0.8As/In0.2Ga0.8As MOS-pHEMTs with Different Shifted Γ-Gate Structures. ECS Journal of Solid State Science and Technology. 1(1). Q1–Q5. 3 indexed citations
11.
Lee, Ching-Sung, et al.. (2012). Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers. Solid-State Electronics. 76. 101–103. 6 indexed citations
12.
Yu, Hsin-Chieh, et al.. (2010). Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow. Applied Physics Express. 4(1). 12103–12103. 6 indexed citations
13.
Hsu, Wei-Chou, et al.. (2008). Automatic seamless mosaicing of microscopic images: enhancing appearance with colour degradation compensation and wavelet‐based blending. Journal of Microscopy. 231(3). 408–418. 43 indexed citations
14.
Hsu, Wei-Chou, et al.. (2007). Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor. Japanese Journal of Applied Physics. 46(4S). 2344–2344. 3 indexed citations
15.
Hsu, Wei-Chou, et al.. (2007). Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N2 atmospheres. Sensors and Actuators B Chemical. 123(2). 1040–1048. 70 indexed citations
16.
Hsu, Wei-Chou, et al.. (2006). Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1−xAs channel. Semiconductor Science and Technology. 21(5). 619–625. 10 indexed citations
17.
Hsu, Wei-Chou, et al.. (2003). Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(3). 981–983. 9 indexed citations
18.
Lee, Ching-Sung, et al.. (2001). Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer. Superlattices and Microstructures. 29(5). 329–334. 2 indexed citations
19.
Hsu, Wei-Chou, et al.. (1996). Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's. IEEE Transactions on Electron Devices. 43(8). 1181–1186. 11 indexed citations
20.
Hsu, Wei-Chou, et al.. (1994). Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In0.25Ga0.75As/GaAs Pseudomorphic Heterostructures. Japanese Journal of Applied Physics. 33(4R). 1778–1778. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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