Weibing Hao

1.1k total citations
35 papers, 863 citations indexed

About

Weibing Hao is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Weibing Hao has authored 35 papers receiving a total of 863 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electronic, Optical and Magnetic Materials, 32 papers in Materials Chemistry and 17 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Weibing Hao's work include Ga2O3 and related materials (34 papers), ZnO doping and properties (29 papers) and Advanced Photocatalysis Techniques (17 papers). Weibing Hao is often cited by papers focused on Ga2O3 and related materials (34 papers), ZnO doping and properties (29 papers) and Advanced Photocatalysis Techniques (17 papers). Weibing Hao collaborates with scholars based in China, United States and Hong Kong. Weibing Hao's co-authors include Shibing Long, Guangwei Xu, Xiaolong Zhao, Xuanze Zhou, Qiming He, Guangzhong Jian, Kai Zhou, Qi Liu, Chen Chen and Zhao Han and has published in prestigious journals such as Applied Physics Letters, Sensors and Journal of Physics D Applied Physics.

In The Last Decade

Weibing Hao

34 papers receiving 818 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Weibing Hao China 15 808 711 409 224 87 35 863
Xueqiang Ji China 16 595 0.7× 686 1.0× 465 1.1× 243 1.1× 59 0.7× 54 821
Jian-Sian Li United States 13 496 0.6× 447 0.6× 285 0.7× 131 0.6× 73 0.8× 68 566
Yuanli Su China 7 713 0.9× 741 1.0× 356 0.9× 266 1.2× 100 1.1× 9 858
Damanpreet Kaur India 9 479 0.6× 486 0.7× 231 0.6× 153 0.7× 51 0.6× 17 558
Luke A. M. Lyle United States 10 432 0.5× 425 0.6× 246 0.6× 100 0.4× 31 0.4× 15 467
Yiyin Nie China 10 248 0.3× 285 0.4× 137 0.3× 138 0.6× 27 0.3× 19 349
Chenran He China 6 270 0.3× 294 0.4× 197 0.5× 119 0.5× 25 0.3× 8 357
Xuanze Zhou China 21 1.2k 1.5× 1.1k 1.5× 564 1.4× 329 1.5× 148 1.7× 61 1.3k
Anamika Singh Pratiyush India 7 449 0.6× 423 0.6× 221 0.5× 108 0.5× 67 0.8× 8 473
H.V.S. Pessoni Brazil 13 257 0.3× 449 0.6× 63 0.2× 185 0.8× 35 0.4× 20 499

Countries citing papers authored by Weibing Hao

Since Specialization
Citations

This map shows the geographic impact of Weibing Hao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weibing Hao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weibing Hao more than expected).

Fields of papers citing papers by Weibing Hao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weibing Hao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weibing Hao. The network helps show where Weibing Hao may publish in the future.

Co-authorship network of co-authors of Weibing Hao

This figure shows the co-authorship network connecting the top 25 collaborators of Weibing Hao. A scholar is included among the top collaborators of Weibing Hao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weibing Hao. Weibing Hao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Xu, Guangwei, et al.. (2025). The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes. Applied Physics Letters. 126(1). 2 indexed citations
3.
Hao, Weibing, Xuanze Zhou, Tianqi Wang, et al.. (2024). The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation. Applied Physics Letters. 125(16). 6 indexed citations
4.
Hao, Weibing, Jinyang Liu, Zhao Han, et al.. (2024). High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact. Applied Physics Express. 17(6). 66501–66501. 8 indexed citations
5.
Hao, Weibing, Guangwei Xu, Feihong Wu, et al.. (2024). 2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm2 Based upon RESURF Effect. 244–247. 1 indexed citations
6.
Hao, Weibing, Feihong Wu, Wenshen Li, et al.. (2023). Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension. IEEE Transactions on Electron Devices. 70(4). 2129–2134. 52 indexed citations
7.
Liu, Qi, Xuanze Zhou, Qiming He, et al.. (2023). Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier. IEEE Transactions on Electron Devices. 70(7). 3762–3767. 8 indexed citations
8.
Han, Zhao, Guangzhong Jian, Xuanze Zhou, et al.. (2023). 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination. IEEE Electron Device Letters. 44(10). 1680–1683. 45 indexed citations
9.
Han, Zhao, X. Yang, Guangwei Xu, et al.. (2023). Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes. Applied Physics Letters. 123(11). 9 indexed citations
10.
Han, Zhao, Guangwei Xu, Weibing Hao, et al.. (2023). Simulation studies of floating field plate in β-Ga2O3 power devices and modules. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 2 indexed citations
11.
Xu, Guangwei, Feihong Wu, Qi Liu, et al.. (2023). Vertical β-Ga2O3 power electronics. Journal of Semiconductors. 44(7). 70301–70301. 10 indexed citations
12.
Hao, Weibing, Qiming He, Zhao Han, et al.. (2023). 1 kV Vertical $\beta$-Ga2O3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation. 394–397. 6 indexed citations
13.
Jian, Guangzhong, Weibing Hao, Feihong Wu, et al.. (2022). -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter . IEEE Journal of the Electron Devices Society. 10. 933–941. 12 indexed citations
14.
Liu, Jinyang, Zhengyuan Li, Weibing Hao, et al.. (2022). Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates. IEEE Electron Device Letters. 43(12). 2061–2064. 1 indexed citations
15.
He, Qiming, Xuanze Zhou, Weibing Hao, et al.. (2022). Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications . IEEE Electron Device Letters. 43(11). 1933–1936. 46 indexed citations
16.
Zhou, Xuanze, Qi Liu, Weibing Hao, Guangwei Xu, & Shibing Long. (2022). Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate. 101–104. 21 indexed citations
17.
Zhou, Xuanze, Guangwei Xu, Qiming He, et al.. (2021). Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current. IEEE Electron Device Letters. 42(3). 430–433. 43 indexed citations
18.
Zhou, Xuanze, Qi Liu, Guangwei Xu, et al.. (2021). Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study. IEEE Transactions on Electron Devices. 68(4). 1501–1506. 53 indexed citations
19.
He, Qiming, Weibing Hao, Xuanze Zhou, et al.. (2021). Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination. IEEE Electron Device Letters. 43(2). 264–267. 60 indexed citations
20.
Dong, Hang, Shibing Long, Haiding Sun, et al.. (2019). Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure. IEEE Electron Device Letters. 40(9). 1385–1388. 58 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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