Qiming He

3.1k total citations
63 papers, 2.7k citations indexed

About

Qiming He is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Qiming He has authored 63 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electronic, Optical and Magnetic Materials, 38 papers in Materials Chemistry and 22 papers in Electrical and Electronic Engineering. Recurrent topics in Qiming He's work include Ga2O3 and related materials (33 papers), ZnO doping and properties (30 papers) and Electronic and Structural Properties of Oxides (13 papers). Qiming He is often cited by papers focused on Ga2O3 and related materials (33 papers), ZnO doping and properties (30 papers) and Electronic and Structural Properties of Oxides (13 papers). Qiming He collaborates with scholars based in China, United States and Singapore. Qiming He's co-authors include Shibing Long, Guangzhong Jian, Ming Liu, Hang Dong, Xiaolong Zhao, Guangwei Xu, Yuan Qin, Shuyi Deng, Xuanze Zhou and Qi Liu and has published in prestigious journals such as Applied Physics Letters, Journal of Power Sources and Chemical Engineering Journal.

In The Last Decade

Qiming He

60 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Qiming He China 30 2.1k 1.9k 1.1k 915 187 63 2.7k
Qiyang Lu United States 23 637 0.3× 1.4k 0.8× 956 0.8× 481 0.5× 146 0.8× 51 2.1k
Zhenfa Zi China 22 1.3k 0.6× 1.1k 0.6× 757 0.7× 288 0.3× 154 0.8× 101 2.0k
Kang Taek Lee South Korea 34 1.7k 0.8× 4.5k 2.3× 1.5k 1.3× 756 0.8× 107 0.6× 103 4.8k
Bangchuan Zhao China 30 1.8k 0.9× 1.8k 0.9× 1.5k 1.3× 288 0.3× 805 4.3× 150 3.1k
Zhibin Liu China 19 779 0.4× 611 0.3× 1.4k 1.3× 1.2k 1.3× 86 0.5× 51 2.1k
Zhihong Du China 33 1.9k 0.9× 2.5k 1.3× 2.2k 1.9× 440 0.5× 58 0.3× 88 3.9k
Xueming Ma China 25 849 0.4× 1.2k 0.6× 1.1k 1.0× 485 0.5× 37 0.2× 63 2.0k
Xiqiang Huang China 32 1.2k 0.6× 2.2k 1.2× 934 0.8× 436 0.5× 40 0.2× 70 2.7k
Shijun Yuan China 26 943 0.4× 2.9k 1.5× 1.3k 1.1× 494 0.5× 169 0.9× 52 3.5k
Hui‐Chun Fu Saudi Arabia 21 329 0.2× 1.1k 0.6× 1.3k 1.1× 1.0k 1.1× 94 0.5× 30 2.2k

Countries citing papers authored by Qiming He

Since Specialization
Citations

This map shows the geographic impact of Qiming He's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qiming He with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qiming He more than expected).

Fields of papers citing papers by Qiming He

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qiming He. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qiming He. The network helps show where Qiming He may publish in the future.

Co-authorship network of co-authors of Qiming He

This figure shows the co-authorship network connecting the top 25 collaborators of Qiming He. A scholar is included among the top collaborators of Qiming He based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qiming He. Qiming He is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hao, Junjie, et al.. (2025). Effects of rare earth Y on solidification microstructure and oxidation resistance of Ti-42Al-5Mn alloy. Journal of Alloys and Compounds. 1042. 183958–183958.
2.
Hao, Weibing, Feihong Wu, Wenshen Li, et al.. (2023). Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension. IEEE Transactions on Electron Devices. 70(4). 2129–2134. 52 indexed citations
3.
Liu, Qi, Xuanze Zhou, Qiming He, et al.. (2023). Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier. IEEE Transactions on Electron Devices. 70(7). 3762–3767. 8 indexed citations
4.
Han, Zhao, Guangzhong Jian, Xuanze Zhou, et al.. (2023). 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination. IEEE Electron Device Letters. 44(10). 1680–1683. 45 indexed citations
5.
Jian, Guangzhong, Weibing Hao, Feihong Wu, et al.. (2022). -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter . IEEE Journal of the Electron Devices Society. 10. 933–941. 12 indexed citations
6.
Liu, Jinyang, Zhengyuan Li, Weibing Hao, et al.. (2022). Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates. IEEE Electron Device Letters. 43(12). 2061–2064. 1 indexed citations
7.
He, Qiming, Xuanze Zhou, Weibing Hao, et al.. (2022). Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications . IEEE Electron Device Letters. 43(11). 1933–1936. 46 indexed citations
8.
Zhou, Xuanze, Yongjian Ma, Guangwei Xu, et al.. (2022). Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Applied Physics Letters. 121(22). 54 indexed citations
9.
Zhang, Jianye, et al.. (2022). Core–shell heterostructured composites of carbon nanotubes and imine-linked hyperbranched polymers as metal-free Li-ion anodes. Nanotechnology Reviews. 11(1). 824–833. 2 indexed citations
10.
Zhou, Xuanze, Guangwei Xu, Qiming He, et al.. (2021). Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current. IEEE Electron Device Letters. 42(3). 430–433. 43 indexed citations
11.
Zhou, Xuanze, Qi Liu, Guangwei Xu, et al.. (2021). Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study. IEEE Transactions on Electron Devices. 68(4). 1501–1506. 53 indexed citations
12.
He, Qiming, Weibing Hao, Xuanze Zhou, et al.. (2021). Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination. IEEE Electron Device Letters. 43(2). 264–267. 60 indexed citations
13.
Dong, Hang, Shibing Long, Haiding Sun, et al.. (2019). Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure. IEEE Electron Device Letters. 40(9). 1385–1388. 58 indexed citations
14.
Qin, Yuan, Haiding Sun, Shibing Long, et al.. (2019). High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes. IEEE Electron Device Letters. 40(9). 1475–1478. 109 indexed citations
15.
Qin, Yuan, Hang Dong, Shibing Long, et al.. (2019). Enhancement-Mode $\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio. IEEE Electron Device Letters. 40(5). 742–745. 71 indexed citations
16.
He, Qiming, Wenxiang Mu, Bo Fu, et al.. (2018). Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics. IEEE Electron Device Letters. 39(4). 556–559. 54 indexed citations
17.
Dong, Hang, Wenxiang Mu, Y. Hu, et al.. (2018). C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3. AIP Advances. 8(6). 42 indexed citations
18.
Jian, Guangzhong, Qiming He, Wenxiang Mu, et al.. (2018). Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties. AIP Advances. 8(1). 59 indexed citations
19.
Xue, Huiwen, Qiming He, Guangzhong Jian, et al.. (2018). An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application. Nanoscale Research Letters. 13(1). 290–290. 207 indexed citations
20.
He, Qiming, et al.. (2017). β‐Ga2O3(100)単結晶基板上のSchottkyバリアダイオードとその温度依存電気特性. Applied Physics Letters. 110(9). 5. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Qiyang Lu Breakdown of academic impact, for papers by Zhenfa Zi Breakdown of academic impact, for papers by Kang Taek Lee Breakdown of academic impact, for papers by Bangchuan Zhao Breakdown of academic impact, for papers by Zhibin Liu Breakdown of academic impact, for papers by Zhihong Du Breakdown of academic impact, for papers by Xueming Ma Breakdown of academic impact, for papers by Xiqiang Huang Breakdown of academic impact, for papers by Shijun Yuan Breakdown of academic impact, for papers by Hui‐Chun Fu
Rankless by CCL
2026