Zhao Han

725 total citations
33 papers, 517 citations indexed

About

Zhao Han is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Zhao Han has authored 33 papers receiving a total of 517 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electronic, Optical and Magnetic Materials, 20 papers in Materials Chemistry and 16 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Zhao Han's work include Ga2O3 and related materials (22 papers), ZnO doping and properties (17 papers) and Advanced Photocatalysis Techniques (15 papers). Zhao Han is often cited by papers focused on Ga2O3 and related materials (22 papers), ZnO doping and properties (17 papers) and Advanced Photocatalysis Techniques (15 papers). Zhao Han collaborates with scholars based in China, Malaysia and Mexico. Zhao Han's co-authors include Jie Wu, Jie Zhang, Shibing Long, Guangwei Xu, Weibing Hao, Xuanze Zhou, Xiaolong Zhao, Zhiyuan Huang, Xuetao Wang and Qiming He and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Zhao Han

31 papers receiving 492 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhao Han China 12 290 211 211 161 123 33 517
Qiao Li China 14 87 0.3× 222 1.1× 91 0.4× 21 0.1× 46 0.4× 45 422
Rujun Liu China 9 76 0.3× 131 0.6× 184 0.9× 42 0.3× 95 0.8× 20 359
Mohd Najim India 10 219 0.8× 95 0.5× 155 0.7× 35 0.2× 11 0.1× 24 365
Abhijit Biswas India 14 59 0.2× 547 2.6× 175 0.8× 26 0.2× 31 0.3× 101 722
Haoda Wang China 7 251 0.9× 230 1.1× 488 2.3× 6 0.0× 240 2.0× 20 754
Diego Ramı́rez Muñoz Spain 11 82 0.3× 341 1.6× 54 0.3× 83 0.5× 7 0.1× 26 486
Hong Ma China 9 86 0.3× 275 1.3× 71 0.3× 12 0.1× 26 0.2× 52 436

Countries citing papers authored by Zhao Han

Since Specialization
Citations

This map shows the geographic impact of Zhao Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhao Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhao Han more than expected).

Fields of papers citing papers by Zhao Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhao Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhao Han. The network helps show where Zhao Han may publish in the future.

Co-authorship network of co-authors of Zhao Han

This figure shows the co-authorship network connecting the top 25 collaborators of Zhao Han. A scholar is included among the top collaborators of Zhao Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhao Han. Zhao Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bai, Shiyu, Xiaohu Hou, Zhao Han, et al.. (2025). High-Performance β-Ga2O3 Alpha Particle Detector With 4.3% Energy Resolution. IEEE Electron Device Letters. 46(9). 1573–1576.
3.
Han, Zhao, et al.. (2024). Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing. Journal of Applied Physics. 135(11). 3 indexed citations
4.
Bai, Shiyu, Xiaohu Hou, Xiangdong Meng, et al.. (2024). Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode. Applied Physics Letters. 125(6). 6 indexed citations
5.
Hao, Weibing, Jinyang Liu, Zhao Han, et al.. (2024). High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact. Applied Physics Express. 17(6). 66501–66501. 8 indexed citations
6.
Han, Zhao, et al.. (2024). The Role of Line-Shaped Defects in Premature Breakdown of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Power Diode and Suppression by Oxygen Annealing. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 196–199. 4 indexed citations
7.
Hou, Xiaohu, Zhao Han, Chen Li, et al.. (2024). Ga 2 O 3 Photon‐Controlled Diode for Sensitive DUV/X‐Ray Detection and High‐Resolution Array Imaging Application. Advanced Functional Materials. 34(42). 14 indexed citations
8.
Hao, Weibing, Guangwei Xu, Feihong Wu, et al.. (2024). 2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm2 Based upon RESURF Effect. 244–247. 1 indexed citations
9.
Han, Zhao, Weibing Hao, Qin Hu, et al.. (2024). Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 232–235. 2 indexed citations
10.
Han, Zhao, Guangzhong Jian, Xuanze Zhou, et al.. (2023). 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination. IEEE Electron Device Letters. 44(10). 1680–1683. 45 indexed citations
11.
Han, Zhao, X. Yang, Guangwei Xu, et al.. (2023). Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes. Applied Physics Letters. 123(11). 9 indexed citations
12.
Han, Zhao, Guangwei Xu, Weibing Hao, et al.. (2023). Simulation studies of floating field plate in β-Ga2O3 power devices and modules. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 2 indexed citations
13.
Han, Zhao, et al.. (2023). β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings. Chinese Physics B. 32(12). 128507–128507. 12 indexed citations
14.
Xu, Guangwei, Feihong Wu, Qi Liu, et al.. (2023). Vertical β-Ga2O3 power electronics. Journal of Semiconductors. 44(7). 70301–70301. 10 indexed citations
15.
Han, Zhao, et al.. (2023). Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters. Journal of Semiconductors. 44(7). 72805–72805. 18 indexed citations
16.
Hao, Weibing, Qiming He, Zhao Han, et al.. (2023). 1 kV Vertical $\beta$-Ga2O3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation. 394–397. 6 indexed citations
17.
He, Qiming, Xuanze Zhou, Weibing Hao, et al.. (2022). Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications . IEEE Electron Device Letters. 43(11). 1933–1936. 46 indexed citations
18.
Han, Zhao, et al.. (2021). Hypersensitive high-temperature gas pressure sensor with Vernier effect by two parallel Fabry-Perot interferometers. Optik. 241. 166956–166956. 15 indexed citations
19.
Li, Chengyi, et al.. (2021). Study on Sludge and Dissolved Oxygen Distribution in a Full-Scale A2/O Oxidation Ditch. Water. 13(19). 2776–2776. 4 indexed citations
20.
He, Xiao-Gang, et al.. (2019). Biomass models with breast height diameter and age for main nativetree species in Guangdong Province.. 55(2). 97–108. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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