Yoshiji Miyamura

779 total citations
65 papers, 581 citations indexed

About

Yoshiji Miyamura is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Yoshiji Miyamura has authored 65 papers receiving a total of 581 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 13 papers in Biomedical Engineering. Recurrent topics in Yoshiji Miyamura's work include Silicon and Solar Cell Technologies (50 papers), Thin-Film Transistor Technologies (33 papers) and Solidification and crystal growth phenomena (18 papers). Yoshiji Miyamura is often cited by papers focused on Silicon and Solar Cell Technologies (50 papers), Thin-Film Transistor Technologies (33 papers) and Solidification and crystal growth phenomena (18 papers). Yoshiji Miyamura collaborates with scholars based in Japan, United States and Norway. Yoshiji Miyamura's co-authors include Koichi Kakimoto, Takashi Sekiguchi, Hirofumi Harada, Satoshi Nakano, Bing Gao, Hidekiyo Harada, Masato Imai, Jun Chen, Masayuki Fukuzawa and Xin Liu and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

Yoshiji Miyamura

59 papers receiving 568 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshiji Miyamura Japan 15 497 268 122 110 60 65 581
Bei Wu United States 9 303 0.6× 171 0.6× 68 0.6× 90 0.8× 39 0.7× 11 392
A. Boé France 9 156 0.3× 194 0.7× 99 0.8× 108 1.0× 109 1.8× 23 385
Yiqin Ji China 11 219 0.4× 147 0.5× 72 0.6× 126 1.1× 32 0.5× 69 409
Marek E. Schmidt Japan 12 256 0.5× 194 0.7× 116 1.0× 146 1.3× 21 0.3× 40 415
Tim Burgess Australia 9 195 0.4× 219 0.8× 159 1.3× 269 2.4× 84 1.4× 10 428
Per I. Widenborg Australia 14 689 1.4× 540 2.0× 90 0.7× 112 1.0× 16 0.3× 54 761
Ender Savrun United States 11 237 0.5× 182 0.7× 49 0.4× 139 1.3× 123 2.0× 40 467
Philipp Rosner Germany 12 278 0.6× 166 0.6× 87 0.7× 25 0.2× 72 1.2× 22 507
S. Akiyama Japan 11 300 0.6× 73 0.3× 189 1.5× 54 0.5× 26 0.4× 26 420
Yu Oshima Japan 9 166 0.3× 251 0.9× 62 0.5× 49 0.4× 54 0.9× 14 338

Countries citing papers authored by Yoshiji Miyamura

Since Specialization
Citations

This map shows the geographic impact of Yoshiji Miyamura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshiji Miyamura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshiji Miyamura more than expected).

Fields of papers citing papers by Yoshiji Miyamura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshiji Miyamura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshiji Miyamura. The network helps show where Yoshiji Miyamura may publish in the future.

Co-authorship network of co-authors of Yoshiji Miyamura

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshiji Miyamura. A scholar is included among the top collaborators of Yoshiji Miyamura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshiji Miyamura. Yoshiji Miyamura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Miyamura, Yoshiji, et al.. (2025). Study on dislocation propagation in 300-mm Si wafer during a high thermal budget process. Materials Science in Semiconductor Processing. 200. 109977–109977.
2.
Han, Xuefeng, Xin Liu, Satoshi Nakano, et al.. (2020). 3D Numerical Study of Crystal Rotation Effect on Three-Phase Line in Floating Zone Silicon. Kyushu University Institutional Repository (QIR) (Kyushu University). 7–11.
3.
Han, Xuefeng, Xin Liu, Satoshi Nakano, et al.. (2019). 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth. Journal of Crystal Growth. 532. 125403–125403. 4 indexed citations
4.
Liu, Xin, Hirofumi Harada, Yoshiji Miyamura, et al.. (2019). Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model. Journal of Crystal Growth. 532. 125405–125405. 14 indexed citations
5.
Miyamura, Yoshiji, Hidekiyo Harada, Xin Liu, et al.. (2018). In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals. Journal of Crystal Growth. 507. 154–156. 3 indexed citations
6.
Tajima, Michio, et al.. (2018). Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation. Japanese Journal of Applied Physics. 57(8S3). 08RB06–08RB06. 6 indexed citations
7.
Miyamura, Yoshiji, Hidekiyo Harada, Satoshi Nakano, Shin–ichi Nishizawa, & K. Kakimoto. (2018). Relationship between carbon concentration and carrier lifetime in CZ-Si crystals. Journal of Crystal Growth. 486. 56–59. 5 indexed citations
8.
Kakimoto, Koichi, Bing Gao, Satoshi Nakano, Hirofumi Harada, & Yoshiji Miyamura. (2017). Silicon bulk growth for solar cells: Science and technology. Japanese Journal of Applied Physics. 56(2). 20101–20101. 10 indexed citations
9.
Chen, Jun, et al.. (2015). Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds. Applied Physics Express. 8(3). 35502–35502. 21 indexed citations
10.
Miyamura, Yoshiji, Takashi Sekiguchi, Jun Chen, et al.. (2014). Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application. Acta Physica Polonica A. 125(4). 991–993. 1 indexed citations
11.
Gao, Bing, Hirofumi Harada, Yoshiji Miyamura, et al.. (2014). Thermal stress induced dislocation distribution in directional solidification of Si for PV application. Journal of Crystal Growth. 408. 19–24. 34 indexed citations
12.
Miyamura, Yoshiji, Hidekiyo Harada, Jun Chen, et al.. (2014). Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth. 401. 133–136. 18 indexed citations
13.
Sekiguchi, Takashi, et al.. (2014). Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal. Journal of Crystal Growth. 401. 717–719. 28 indexed citations
14.
Miyamura, Yoshiji, et al.. (2014). Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots. Acta Physica Polonica A. 125(4). 1024–1026. 1 indexed citations
15.
Fukuzawa, Masayuki, et al.. (2013). Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 205-206. 94–99. 5 indexed citations
16.
Inoue, M., Satoshi Nakano, Hirofumi Harada, et al.. (2013). Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process. International Journal of Photoenergy. 2013. 1–8. 5 indexed citations
17.
Gao, Bing, Satoshi Nakano, Hirofumi Harada, et al.. (2012). Anisotropic Thermal Stress Simulation with Complex Crystal–Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon. Crystal Growth & Design. 12(11). 5708–5714. 16 indexed citations
18.
19.
Nakashima, Satοru, et al.. (1996). Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers. Journal of The Electrochemical Society. 143(1). 244–251. 45 indexed citations
20.
Miyamura, Yoshiji, et al.. (1996). Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals. Japanese Journal of Applied Physics. 35(2R). 520–520. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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