W. K. Ge

845 total citations
40 papers, 708 citations indexed

About

W. K. Ge is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, W. K. Ge has authored 40 papers receiving a total of 708 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in W. K. Ge's work include Semiconductor Quantum Structures and Devices (21 papers), Quantum Dots Synthesis And Properties (11 papers) and Advanced Semiconductor Detectors and Materials (10 papers). W. K. Ge is often cited by papers focused on Semiconductor Quantum Structures and Devices (21 papers), Quantum Dots Synthesis And Properties (11 papers) and Advanced Semiconductor Detectors and Materials (10 papers). W. K. Ge collaborates with scholars based in Hong Kong, China and United States. W. K. Ge's co-authors include Jiannong Wang, Zhengdong Lu, Xiaoping Yang, Bin Zheng, Zhiliang Yuan, Yang Wang, L.L. Chang, Lianhe Li, Denghui Jiang and Lin Yan and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

W. K. Ge

38 papers receiving 687 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. K. Ge Hong Kong 14 488 433 383 120 65 40 708
Yoon‐Suk Kim South Korea 7 278 0.6× 242 0.6× 414 1.1× 83 0.7× 106 1.6× 25 649
A. Létoublon France 14 554 1.1× 384 0.9× 334 0.9× 101 0.8× 57 0.9× 25 665
L. Bryja Poland 16 450 0.9× 239 0.6× 601 1.6× 42 0.3× 65 1.0× 68 753
M. Ozawa Japan 14 707 1.4× 590 1.4× 416 1.1× 159 1.3× 70 1.1× 23 878
V. Donchev Bulgaria 11 371 0.8× 306 0.7× 243 0.6× 56 0.5× 36 0.6× 63 572
Marvin Hartwig Zoellner Germany 15 368 0.8× 217 0.5× 390 1.0× 58 0.5× 56 0.9× 52 709
Masaji Yoshida Japan 13 462 0.9× 250 0.6× 336 0.9× 111 0.9× 84 1.3× 22 629
Zengquan Xue China 14 324 0.7× 239 0.6× 468 1.2× 57 0.5× 41 0.6× 52 683
Aishi Yamamoto Japan 12 341 0.7× 182 0.4× 492 1.3× 77 0.6× 163 2.5× 48 687
Alexander N. Chaika Russia 14 230 0.5× 245 0.6× 309 0.8× 52 0.4× 70 1.1× 55 535

Countries citing papers authored by W. K. Ge

Since Specialization
Citations

This map shows the geographic impact of W. K. Ge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. K. Ge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. K. Ge more than expected).

Fields of papers citing papers by W. K. Ge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. K. Ge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. K. Ge. The network helps show where W. K. Ge may publish in the future.

Co-authorship network of co-authors of W. K. Ge

This figure shows the co-authorship network connecting the top 25 collaborators of W. K. Ge. A scholar is included among the top collaborators of W. K. Ge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. K. Ge. W. K. Ge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Tang, Ning, et al.. (2012). Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films. Applied Physics Letters. 101(13). 16 indexed citations
3.
He, Hongtao, et al.. (2008). Phase-dependent bistable transitions in a weakly-coupled GaAs/AlAs superlattice. New Journal of Physics. 10(3). 33019–33019. 1 indexed citations
4.
Li, Baikui, Cong Wang, I. K. Sou, W. K. Ge, & Jiannong Wang. (2007). Anomalous photocurrent observed in an Fe–ZnS:Fe Schottky diode. Applied Physics Letters. 91(17). 6 indexed citations
5.
He, Hongtao, et al.. (2007). Step-like I-V Characteristics and Period-adding Bifurcations in External Ac-driven GaAs/AlAs Superlattices. AIP conference proceedings. 893. 539–540. 1 indexed citations
6.
Tan, Ping‐Heng, Xiao Luo, W. K. Ge, et al.. (2007). Unusual carrier thermalization in a dilute GaAs1−xNx alloy. Applied Physics Letters. 90(6). 2 indexed citations
7.
Yang, Xudong, Zheng Sun, Baoquan Sun, et al.. (2006). Exciton localization due to isoelectronic substitution in ZnSTe. Journal of Luminescence. 122-123. 402–404. 1 indexed citations
8.
Chan, S. K., et al.. (2005). Te antisite incorporation in ZnS1˛xTex thin films. Physical Review B. 71(19). 2 indexed citations
9.
He, Hongtao, et al.. (2005). Resistivity minima and Kondo effect in ferromagnetic GaMnAs films. Applied Physics Letters. 87(16). 38 indexed citations
10.
Yang, Cheng, Ming Gong, W. K. Ge, et al.. (2004). Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2. Physical Review Letters. 92(12). 125504–125504. 23 indexed citations
11.
Sou, I. K., et al.. (2004). Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors. Journal of Crystal Growth. 265(1-2). 28–33. 7 indexed citations
12.
Lu, Lu, et al.. (2003). Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS. Journal of Applied Physics. 93(9). 5325–5330. 5 indexed citations
13.
Moss, S. C., A. Mascarenhas, L. N. Pfeiffer, et al.. (2003). Layer Ordering and Faulting in(GaAs)n/(AlAs)nUltrashort-Period Superlattices. Physical Review Letters. 91(10). 106103–106103. 13 indexed citations
14.
Lu, Shunmian, Jiannong Wang, Lifeng Bian, et al.. (2003). The effects of rapid thermal annealing on the optical properties of Zn1−xMnxSe epilayer grown by MOCVD on GaAs substrate. Journal of Crystal Growth. 249(3-4). 538–543. 3 indexed citations
15.
Tang, Zi Kang, et al.. (2003). Optical properties of organic dyes in nanoporous zeolite crystals. Applied Physics Letters. 83(12). 2438–2440. 17 indexed citations
16.
Luo, Xuan, et al.. (2003). Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface. Journal of Crystal Growth. 260(1-2). 13–17. 12 indexed citations
17.
Pan, Z., et al.. (2001). Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration. Applied Physics Letters. 78(15). 2217–2219. 81 indexed citations
18.
19.
Feng, Wei, Yin Wang, Jiannong Wang, et al.. (1998). Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells. Applied Physics Letters. 72(12). 1463–1465. 10 indexed citations
20.
Ge, W. K., et al.. (1997). Sulfur forming an isoelectronic center in zinc telluride thin films. Physical review. B, Condensed matter. 55(15). 10035–10039. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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