W. H. Hackett

643 total citations
19 papers, 470 citations indexed

About

W. H. Hackett is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, W. H. Hackett has authored 19 papers receiving a total of 470 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in W. H. Hackett's work include Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and interfaces (9 papers) and GaN-based semiconductor devices and materials (6 papers). W. H. Hackett is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Semiconductor materials and interfaces (9 papers) and GaN-based semiconductor devices and materials (6 papers). W. H. Hackett collaborates with scholars based in United States. W. H. Hackett's co-authors include R. H. Saul, O. G. Lorimor, G. W. Kammlott, J. T. Armstrong, P.D. Dapkus, W. Rosenzweig, R. W. Dixon, R. Z. Bachrach, S. E. Haszko and H. W. Verleur and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

W. H. Hackett

18 papers receiving 286 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. H. Hackett United States 12 358 312 122 119 66 19 470
Koichi Kamon Japan 11 306 0.9× 285 0.9× 116 1.0× 91 0.8× 26 0.4× 15 380
R. J. Chicotka United States 12 342 1.0× 407 1.3× 68 0.6× 129 1.1× 20 0.3× 13 471
W. E. Spicer United States 3 439 1.2× 400 1.3× 39 0.3× 102 0.9× 79 1.2× 3 538
M. Ozeki Japan 12 396 1.1× 364 1.2× 105 0.9× 130 1.1× 55 0.8× 36 487
P. Roentgen Switzerland 12 431 1.2× 467 1.5× 95 0.8× 100 0.8× 24 0.4× 37 570
Takeshi Akatsuka Japan 6 359 1.0× 361 1.2× 141 1.2× 79 0.7× 21 0.3× 7 436
K. Werner Netherlands 13 424 1.2× 308 1.0× 74 0.6× 131 1.1× 57 0.9× 36 509
J.C. Bischoff United States 5 633 1.8× 559 1.8× 78 0.6× 157 1.3× 96 1.5× 10 733
B. S. Freer United States 11 318 0.9× 244 0.8× 115 0.9× 143 1.2× 43 0.7× 16 491
W. J. Schaffer United States 8 442 1.2× 302 1.0× 32 0.3× 131 1.1× 21 0.3× 11 538

Countries citing papers authored by W. H. Hackett

Since Specialization
Citations

This map shows the geographic impact of W. H. Hackett's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. H. Hackett with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. H. Hackett more than expected).

Fields of papers citing papers by W. H. Hackett

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. H. Hackett. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. H. Hackett. The network helps show where W. H. Hackett may publish in the future.

Co-authorship network of co-authors of W. H. Hackett

This figure shows the co-authorship network connecting the top 25 collaborators of W. H. Hackett. A scholar is included among the top collaborators of W. H. Hackett based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. H. Hackett. W. H. Hackett is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Hackett, W. H., C.A. Brackett, L. E. Howarth, et al.. (1977). Optical Data Links for Short-Haul High-Level Performance at 16 and 32 Mb/s. Journal of the Optical Society of America A. 67. 709. 1 indexed citations
2.
Lorimor, O. G., P.D. Dapkus, & W. H. Hackett. (1975). Very High Efficiency GaP Green Light Emitting Diodes. Journal of The Electrochemical Society. 122(3). 407–412. 10 indexed citations
3.
Dapkus, P.D., W. H. Hackett, O. G. Lorimor, & R. Z. Bachrach. (1974). Kinetics of recombination in nitrogen-doped GaP. Journal of Applied Physics. 45(11). 4920–4930. 36 indexed citations
4.
Lorimor, O. G., W. H. Hackett, & R. Z. Bachrach. (1973). Reproducible High-Efficiency GaP Green-Emitting Diodes Grown by Overcompensation. Journal of The Electrochemical Society. 120(10). 1424–1424. 10 indexed citations
5.
Dapkus, P.D., W. H. Hackett, O. G. Lorimor, G. W. Kammlott, & S. E. Haszko. (1973). Minority-carrier lifetimes and luminescence efficiencies in nitrogen-doped GaP. Applied Physics Letters. 22(5). 227–229. 37 indexed citations
6.
Hackett, W. H., R. H. Saul, R. W. Dixon, & G. W. Kammlott. (1972). Scanning Electron Microscope Characterization of GaP Red-Emitting Diodes. Journal of Applied Physics. 43(6). 2857–2868. 50 indexed citations
7.
Hackett, W. H., et al.. (1972). A Scanning Electron Microscope Investigation of Etching Phenomena in GaP Electroluminescent Diodes. Journal of The Electrochemical Society. 119(7). 973–973. 4 indexed citations
8.
Hackett, W. H.. (1972). Electron-Beam Excited Minority-Carrier Diffusion Profiles in Semiconductors. Journal of Applied Physics. 43(4). 1649–1654. 92 indexed citations
9.
Hackett, W. H., et al.. (1972). On the Incorporation of Oxygen in GaP Liquid Phase Epitaxy Layers. Journal of The Electrochemical Society. 119(4). 542–542. 3 indexed citations
10.
Hackett, W. H.. (1971). Direct Measurement of Very Short Minority-Carrier Diffusion Lengths in Semiconductors. Journal of Applied Physics. 42(8). 3249–3251. 20 indexed citations
11.
Saul, R. H. & W. H. Hackett. (1970). Impurity Gradients in Te-Doped GaP Liquid Phase Epitaxy Layers. Journal of Applied Physics. 41(8). 3554–3555. 13 indexed citations
12.
Hackett, W. H., R. H. Saul, H. W. Verleur, & S. J. Bass. (1970). HIGH-EFFICIENCY RED-EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATES. Applied Physics Letters. 16(12). 477–479. 25 indexed citations
13.
Hackett, W. H., et al.. (1970). A Technique for Determining p-n Junction Doping Profiles and Its Application to GaP. Review of Scientific Instruments. 41(8). 1182–1183. 13 indexed citations
14.
Hackett, W. H. & R. N. Bhargava. (1970). Correlation between Photoluminescence and Electroluminescence Time Decay in Red-Emitting GaP Diodes at Room Temperature. Journal of Applied Physics. 41(8). 3306–3307. 7 indexed citations
15.
Saul, R. H. & W. H. Hackett. (1970). Distribution of Impurities in Zn,O-Doped GaP Liquid Phase Epitaxy Layers. Journal of The Electrochemical Society. 117(7). 921–921. 24 indexed citations
16.
Hackett, W. H., et al.. (1969). Saturation of Zn-O complexes in GaP diodes. Proceedings of the IEEE. 57(11). 2072–2073. 15 indexed citations
17.
Saul, R. H., J. T. Armstrong, & W. H. Hackett. (1969). GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%. Applied Physics Letters. 15(7). 229–231. 64 indexed citations
18.
Rosenzweig, W., et al.. (1969). Kinetics of Red Luminescence in GaP. Journal of Applied Physics. 40(11). 4477–4485. 36 indexed citations
19.
Hackett, W. H., et al.. (1967). Microwave flux-flow dissipation in paramagnetically-limited Ti-V alloys. Physics Letters A. 24(12). 663–664. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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