W. Futako

436 total citations
27 papers, 362 citations indexed

About

W. Futako is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W. Futako has authored 27 papers receiving a total of 362 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W. Futako's work include Thin-Film Transistor Technologies (22 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Silicon and Solar Cell Technologies (15 papers). W. Futako is often cited by papers focused on Thin-Film Transistor Technologies (22 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Silicon and Solar Cell Technologies (15 papers). W. Futako collaborates with scholars based in Japan and United States. W. Futako's co-authors include Isamu Shimizu, C.M. Fortmann, Satoshi Yamasaki, Toshio Kamiya, Michio Kondo, Akihisa Matsuda, Hideyo Okushi, Hiromitsu Kato, Norikazu Mizuochi and Makoto Fukawa and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Futako

27 papers receiving 331 citations

Peers

Countries citing papers authored by W. Futako

Since Specialization

Citations

This map shows the geographic impact of W. Futako's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Futako with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Futako more than expected).

Fields of papers citing papers by W. Futako

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Futako. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Futako. The network helps show where W. Futako may publish in the future.

Co-authorship network of co-authors of W. Futako

This figure shows the co-authorship network connecting the top 25 collaborators of W. Futako. A scholar is included among the top collaborators of W. Futako based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Futako. W. Futako is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source 2004 ·Diamond and Related Materials ·Hiromitsu Kato, W. Futako, Satoshi Yamasaki, Hideyo Okushi	26
2	High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements 2004 ·Journal of Non-Crystalline Solids ·(unknown), W. Futako, Toshio Kamiya, Isamu Shimizu	1
3	In situESR Observation of Interface Dangling Bond Formation Processes During UltrathinSiO2Growth On Si(111) 2004 ·Physical Review Letters ·W. Futako, Norikazu Mizuochi, Satoshi Yamasaki	30
4	Growth of phosphorus-doped diamond using tertiarybutylphosphine and trimethylphosphine as dopant gases 2004 ·Diamond and Related Materials ·Hiromitsu Kato, W. Futako, Satoshi Yamasaki, Hideyo Okushi	21
5	In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si 2002 ·Journal of Non-Crystalline Solids ·W. Futako, T. Umeda, Matsuhiko Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki	8
6	Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques 2001 ·Solar Energy Materials and Solar Cells ·(unknown), Satoshi Shimizu, (unknown), (unknown), W. Futako, Toshio Kamiya, C.M. Fortmann, Isamu Shimizu	4
7	In situ electron spin resonance observation of Si(111) 7×7 surface during hydrogenation process 2001 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. Futako, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki	3
8	High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing 2000 ·Journal of Organometallic Chemistry ·W. Futako, Takeshi Sugawara, Toshio Kamiya, Isamu Shimizu	6
9	Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon 1999 ·Japanese Journal of Applied Physics ·W. Futako, (unknown), T. Nishimoto, Michio Kondo, Isamu Shimizu, Akihisa Matsuda	6
10	Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD 1999 ·Thin Solid Films ·(unknown), Hiroshi Fujiyama, (unknown), Ryo Hayashi, W. Futako, Michio Kondo, Akihisa Matsuda	16
11	High-Rate Growth of Stable a-Si:H 1999 ·MRS Proceedings ·Toshiyuki Takagi, (unknown), Adam Payne, W. Futako, T. Nishimoto, Madoka Takai, Michio Kondo, Akihisa Matsuda	12
12	Role of Hydrogen for Microcrystalline Silicon Formation 1998 ·MRS Proceedings ·(unknown), Michio Kondo, Makoto Fukawa, (unknown), W. Futako, Isamu Shimizu, Akihisa Matsuda	8
13	Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H 1998 ·Journal of Non-Crystalline Solids ·W. Futako, Toshio Kamiya, C.M. Fortmann, Isamu Shimizu	5
14	Wide Band Gap a-Si:H Based Ihgh Gain Vidicon Devices Prepared by Chemical Anniealing 1998 ·MRS Proceedings ·W. Futako, Takeshi Sugawara, Toshio Kamiya, C.M. Fortmann, Isamu Shimizu	1
15	Stable Solar Cells Prepared from Dichlorosilane 1998 ·MRS Proceedings ·Yoh Yamamoto, W. Futako, Kazuhiko Fukutani, (unknown), Takeshi Sugawara, Toshio Kamiya, C.M. Fortmann, Isamu Shimizu	4
16	Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation 1998 ·Journal of Non-Crystalline Solids ·Kazuhiko Fukutani, (unknown), W. Futako, (unknown), Toshio Kamiya, C.M. Fortmann, Isamu Shimizu	40
17	Intentional Reconstruction of Silicon Network on the Surface and within Sub-Surface by H and Ar 1997 ·MRS Proceedings ·W. Futako, Kazuhiko Fukutani, Isamu Shimizu	2
18	Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H 1996 ·MRS Proceedings ·W. Futako, Isamu Shimizu, C.M. Fortmann	3
19	Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealing 1996 ·Journal of Non-Crystalline Solids ·W. Futako, (unknown), K. Nakamura, C.M. Fortmann, Isamu Shimizu	4
20	Wide-Gap a-Si:H Fabricated by Controlling Voids 1996 ·MRS Proceedings ·(unknown), W. Futako, (unknown), Isamu Shimizu	11

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact