T.H. Borst

491 total citations
13 papers, 404 citations indexed

About

T.H. Borst is a scholar working on Materials Chemistry, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, T.H. Borst has authored 13 papers receiving a total of 404 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Materials Chemistry, 9 papers in Mechanics of Materials and 9 papers in Electrical and Electronic Engineering. Recurrent topics in T.H. Borst's work include Diamond and Carbon-based Materials Research (13 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (8 papers). T.H. Borst is often cited by papers focused on Diamond and Carbon-based Materials Research (13 papers), Metal and Thin Film Mechanics (9 papers) and Semiconductor materials and devices (8 papers). T.H. Borst collaborates with scholars based in Germany and United States. T.H. Borst's co-authors include O. Weis, E. Kohn, Andrei Vescan, Wolfgang Ebert, P. Gluche, Scott D. Wolter and Sebastian Strobel and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Diamond and Related Materials.

In The Last Decade

T.H. Borst

12 papers receiving 392 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T.H. Borst Germany	9	375	213	173	75	68	13	404
Hideo Kiyota Japan	12	449 1.2×	271 1.3×	190 1.1×	114 1.5×	50 0.7×	32	479
Hui Jin Looi United Kingdom	12	358 1.0×	180 0.8×	111 0.6×	80 1.1×	34 0.5×	15	371
M. Adamschik Germany	12	332 0.9×	154 0.7×	159 0.9×	148 2.0×	39 0.6×	20	408
P. Southworth United Kingdom	9	456 1.2×	262 1.2×	297 1.7×	49 0.7×	62 0.9×	10	515
M. Kubovič Germany	14	533 1.4×	356 1.7×	278 1.6×	76 1.0×	59 0.9×	22	555
Y. Nishibayashi Japan	8	313 0.8×	101 0.5×	138 0.8×	64 0.9×	78 1.1×	16	339
C. W. Hatfield United States	8	404 1.1×	255 1.2×	208 1.2×	95 1.3×	29 0.4×	13	443
A. Flöter Germany	13	366 1.0×	116 0.5×	188 1.1×	105 1.4×	55 0.8×	17	398
Alexandre Fiori France	14	397 1.1×	273 1.3×	156 0.9×	123 1.6×	37 0.5×	22	467
K. Janischowsky Germany	14	452 1.2×	195 0.9×	265 1.5×	89 1.2×	69 1.0×	19	477

Countries citing papers authored by T.H. Borst

Since Specialization

Citations

This map shows the geographic impact of T.H. Borst's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.H. Borst with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.H. Borst more than expected).

Fields of papers citing papers by T.H. Borst

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.H. Borst. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.H. Borst. The network helps show where T.H. Borst may publish in the future.

Co-authorship network of co-authors of T.H. Borst

This figure shows the co-authorship network connecting the top 25 collaborators of T.H. Borst. A scholar is included among the top collaborators of T.H. Borst based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.H. Borst. T.H. Borst is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

Ebert, Wolfgang, Andrei Vescan, T.H. Borst, & E. Kohn. (2002). Epitaxial diamond Schottky barrier diode with on/off current ratios in excess of 10/sup 7/ at high temperatures. 419–422.

Ebert, Wolfgang, Andrei Vescan, P. Gluche, T.H. Borst, & E. Kohn. (1997). High-voltage Schottky diode on epitaxial diamond layer. Diamond and Related Materials. 6(2-4). 329–332. 44 indexed citations

Borst, T.H. & O. Weis. (1996). Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications. physica status solidi (a). 154(1). 423–444. 103 indexed citations

Vescan, Andrei, Wolfgang Ebert, T.H. Borst, & E. Kohn. (1996). Electrical characterisation of diamond resistors etched by RIE. Diamond and Related Materials. 5(6-8). 747–751. 20 indexed citations

Wolter, Scott D., T.H. Borst, P. Gluche, et al.. (1996). Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices. MRS Proceedings. 423. 2 indexed citations

Wolter, Scott D., T.H. Borst, Andrei Vescan, & E. Kohn. (1996). The nucleation of highly oriented diamond on silicon via an alternating current substrate bias. Applied Physics Letters. 68(25). 3558–3560. 28 indexed citations

Gluche, P., Scott D. Wolter, T.H. Borst, et al.. (1996). Highly rectifying Au-contacts on diamond-on-silicon substrate. IEEE Electron Device Letters. 17(6). 270–272. 8 indexed citations

Borst, T.H. & O. Weis. (1995). Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth. Diamond and Related Materials. 4(7). 948–953. 96 indexed citations

Borst, T.H., Sebastian Strobel, & O. Weis. (1995). High-temperature diamond p-n junction: B-doped homoepitaxial layer on N-doped substrate. Applied Physics Letters. 67(18). 2651–2653. 21 indexed citations

10.

Vescan, Andrei, Wolfgang Ebert, T.H. Borst, & E. Kohn. (1995). characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate. Diamond and Related Materials. 4(5-6). 661–665. 35 indexed citations

11.

Borst, T.H., et al.. (1994). Characterization of undoped and doped homoepitaxial diamond layers produced by microwave plasma CVD. Diamond and Related Materials. 3(4-6). 515–519. 19 indexed citations

12.

Ebert, Wolfgang, Andrei Vescan, T.H. Borst, & E. Kohn. (1994). High current p/p/sup +/-diamond Schottky diode. IEEE Electron Device Letters. 15(8). 289–291. 27 indexed citations

13.

Ebert, Wolfgang, et al.. (1994). <title>Epitaxial diamond Schottky diode on p+-substrate</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2151. 83–90. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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