K. Janischowsky

565 total citations
19 papers, 477 citations indexed

About

K. Janischowsky is a scholar working on Materials Chemistry, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, K. Janischowsky has authored 19 papers receiving a total of 477 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Materials Chemistry, 12 papers in Mechanics of Materials and 7 papers in Electrical and Electronic Engineering. Recurrent topics in K. Janischowsky's work include Diamond and Carbon-based Materials Research (19 papers), Metal and Thin Film Mechanics (12 papers) and Semiconductor materials and devices (7 papers). K. Janischowsky is often cited by papers focused on Diamond and Carbon-based Materials Research (19 papers), Metal and Thin Film Mechanics (12 papers) and Semiconductor materials and devices (7 papers). K. Janischowsky collaborates with scholars based in Germany and United States. K. Janischowsky's co-authors include E. Kohn, L. Ley, Maren Stämmler, J. Ristein, Wolfgang Ebert, M. Kubovič, Martin Hundhausen, S. Rohmfeld, M. Albrecht and H. P. Strunk and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

K. Janischowsky

19 papers receiving 467 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Janischowsky Germany 14 452 265 195 89 69 19 477
M. Kubovič Germany 14 533 1.2× 278 1.0× 356 1.8× 76 0.9× 59 0.9× 22 555
T.H. Borst Germany 9 375 0.8× 173 0.7× 213 1.1× 75 0.8× 68 1.0× 13 404
M. Adamschik Germany 12 332 0.7× 159 0.6× 154 0.8× 148 1.7× 39 0.6× 20 408
M.Q. Ding United States 8 508 1.1× 284 1.1× 130 0.7× 179 2.0× 77 1.1× 16 578
R. Weimer United States 7 379 0.8× 272 1.0× 123 0.6× 59 0.7× 99 1.4× 14 424
A. Flöter Germany 13 366 0.8× 188 0.7× 116 0.6× 105 1.2× 55 0.8× 17 398
P. Southworth United Kingdom 9 456 1.0× 297 1.1× 262 1.3× 49 0.6× 62 0.9× 10 515
Hideo Kiyota Japan 12 449 1.0× 190 0.7× 271 1.4× 114 1.3× 50 0.7× 32 479
André Tardieu France 10 295 0.7× 164 0.6× 105 0.5× 53 0.6× 79 1.1× 16 327
Y. Nishibayashi Japan 8 313 0.7× 138 0.5× 101 0.5× 64 0.7× 78 1.1× 16 339

Countries citing papers authored by K. Janischowsky

Since Specialization
Citations

This map shows the geographic impact of K. Janischowsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Janischowsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Janischowsky more than expected).

Fields of papers citing papers by K. Janischowsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Janischowsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Janischowsky. The network helps show where K. Janischowsky may publish in the future.

Co-authorship network of co-authors of K. Janischowsky

This figure shows the co-authorship network connecting the top 25 collaborators of K. Janischowsky. A scholar is included among the top collaborators of K. Janischowsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Janischowsky. K. Janischowsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Dipalo, Michele, et al.. (2006). N‐type doped nano‐diamond in a first MEMS application. physica status solidi (a). 203(12). 3036–3041. 16 indexed citations
2.
Zimmermann, Tom, K. Janischowsky, A. Denisenko, et al.. (2005). Nanocrystalline diamond pn-structure grown by Hot-Filament CVD. Diamond and Related Materials. 15(2-3). 203–206. 18 indexed citations
3.
Zimmermann, Tom, M. Kubovič, A. Denisenko, et al.. (2005). Ultra-nano-crystalline/single crystal diamond heterostructure diode. Diamond and Related Materials. 14(3-7). 416–420. 46 indexed citations
4.
Janischowsky, K., et al.. (2005). An “all-diamond” inkjet realized in sacrificial layer technology. Diamond and Related Materials. 14(3-7). 504–508. 14 indexed citations
5.
Janischowsky, K., et al.. (2005). Mechanical characterization and stress engineering of nanocrystalline diamonds films for MEMS applications. Diamond and Related Materials. 14(3-7). 411–415. 36 indexed citations
6.
Kubovič, M., K. Janischowsky, & E. Kohn. (2005). Surface channel MESFETs on nanocrystalline diamond. Diamond and Related Materials. 14(3-7). 514–517. 19 indexed citations
7.
Janischowsky, K., et al.. (2004). Nanocrystalline diamond films for mechanical applications. physica status solidi (a). 201(11). 2553–2557. 15 indexed citations
8.
Janischowsky, K., Wolfgang Ebert, & E. Kohn. (2003). Bias enhanced nucleation of diamond on silicon (100) in a HFCVD system. Diamond and Related Materials. 12(3-7). 336–339. 44 indexed citations
9.
Janischowsky, K., et al.. (2002). Field emission characterization of carbon nanostructures for cold cathode applications. 79. 200–201. 1 indexed citations
11.
Stämmler, Maren, J. Ristein, K. Janischowsky, et al.. (1999). Field emission measurements with micrometre resolution on carbon nanostructures. Diamond and Related Materials. 8(2-5). 792–797. 27 indexed citations
12.
Janischowsky, K., Maren Stämmler, & L. Ley. (1999). High quality textured growth of oriented diamond thin films on Si (100) in a hot filament-CVD system. Diamond and Related Materials. 8(2-5). 179–184. 16 indexed citations
13.
Janischowsky, K., et al.. (1999). Growth of high quality, large grain size, highly oriented diamond on Si (100). Applied Physics Letters. 75(14). 2094–2096. 10 indexed citations
14.
Ley, L., et al.. (1999). Infrared spectroscopy of C–D vibrational modes on diamond (100) surfaces. Surface Science. 427-428. 245–249. 13 indexed citations
15.
Stämmler, Maren, et al.. (1998). Diamond nucleation under bias conditions. Journal of Applied Physics. 83(1). 531–539. 51 indexed citations
16.
Janischowsky, K., et al.. (1998). Carbon nanostructures — Diamond nucleation centers formed during the bias pretreatment. Diamond and Related Materials. 7(2-5). 147–151. 10 indexed citations
17.
Janischowsky, K., et al.. (1996). Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films. Journal of Applied Physics. 79(2). 768–775. 43 indexed citations
18.
Janischowsky, K., et al.. (1996). Diamond growth during bias pre-treatment in the microwave CVD of diamond. Diamond and Related Materials. 5(3-5). 321–325. 36 indexed citations
19.
Graupner, R., K. Janischowsky, Shi‐Long Xu, et al.. (1993). Initial stages in the growth of polycrystalline diamond on silicon. Diamond and Related Materials. 2(12). 1467–1472. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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