Ted Letavic

748 total citations
31 papers, 351 citations indexed

About

Ted Letavic is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture. According to data from OpenAlex, Ted Letavic has authored 31 papers receiving a total of 351 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Hardware and Architecture. Recurrent topics in Ted Letavic's work include Silicon Carbide Semiconductor Technologies (18 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Semiconductor materials and devices (16 papers). Ted Letavic is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Semiconductor materials and devices (16 papers). Ted Letavic collaborates with scholars based in United States, Finland and Netherlands. Ted Letavic's co-authors include E. Arnold, S. Mukherjee, Don Disney, A. Nakagawa, M. Simpson, J. Petruzzello, S. Merchant, Helmut Baumgart, H. Pein and S.S. Wong and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

Ted Letavic

26 papers receiving 312 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ted Letavic United States 9 349 12 11 10 7 31 351
J. Sakano Japan 10 334 1.0× 25 2.1× 11 1.0× 9 0.9× 3 0.4× 19 345
Friedhelm Bauer Switzerland 9 349 1.0× 16 1.3× 16 1.5× 9 0.9× 4 0.6× 18 356
Roozbeh Bonyadi United Kingdom 7 402 1.2× 14 1.2× 15 1.4× 5 0.5× 7 1.0× 16 407
G. Dolny United States 8 314 0.9× 9 0.8× 23 2.1× 8 0.8× 9 1.3× 25 320
N. Sadachika Japan 9 303 0.9× 9 0.8× 7 0.6× 21 2.1× 4 0.6× 38 310
W. Bergner Germany 7 261 0.7× 6 0.5× 16 1.5× 6 0.6× 15 2.1× 17 272
P.M. Shenoy United States 8 279 0.8× 9 0.8× 11 1.0× 5 0.5× 14 2.0× 17 286
A. Andreini Italy 9 270 0.8× 4 0.3× 5 0.5× 21 2.1× 7 1.0× 38 276
V. Rumennik United States 10 369 1.1× 11 0.9× 11 1.0× 5 0.5× 6 0.9× 12 375

Countries citing papers authored by Ted Letavic

Since Specialization
Citations

This map shows the geographic impact of Ted Letavic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ted Letavic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ted Letavic more than expected).

Fields of papers citing papers by Ted Letavic

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ted Letavic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ted Letavic. The network helps show where Ted Letavic may publish in the future.

Co-authorship network of co-authors of Ted Letavic

This figure shows the co-authorship network connecting the top 25 collaborators of Ted Letavic. A scholar is included among the top collaborators of Ted Letavic based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ted Letavic. Ted Letavic is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bian, Yusheng, Neng Liu, Won Suk Lee, et al.. (2023). Low-loss SiN 2×2 MMI 50/50 Couplers for Monolithically Integrated Silicon Photonics. 10. JW2A.86–JW2A.86.
3.
Letavic, Ted, et al.. (2017). Semiconductor platforms for ultra low power IoT solutions. T164–T165. 2 indexed citations
4.
Disney, Don, et al.. (2017). High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects. IEEE Transactions on Electron Devices. 64(3). 659–673. 79 indexed citations
5.
Zierak, M., N. Feilchenfeld, Chaojiang Li, & Ted Letavic. (2015). Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification. 337–340. 5 indexed citations
6.
Li, Chaojiang, M. Zierak, Randy Wolf, et al.. (2014). A 19DBM 5.8GHzz PA demonstrator with a novel low ron high FT RF LDMOS. 58. 1–4. 1 indexed citations
7.
8.
Redman-White, W., et al.. (2009). Leaner and greener: Adapting to a changing climate of innovation. ePrints Soton (University of Southampton). 8–13. 1 indexed citations
9.
Letavic, Ted, et al.. (2008). 55V Integrated Power and Non-Volatile Technology for Solid State Lighting Applications. 60–63. 4 indexed citations
10.
Pein, H., E. Arnold, Helmut Baumgart, et al.. (2005). Soi High Voltage Ldmos and Ligbt Transistors with a Buried Diode and Surface P-Layer. 146–147. 3 indexed citations
11.
Letavic, Ted, et al.. (2004). A 2GHz 160V complementary silicon-on-insulator process for high-bandwidth amplification. 274–277. 1 indexed citations
12.
Petruzzello, J., et al.. (2003). A thin-layer high-voltage silicon-on-insulator hybrid LDMOS/LIGBT device. 117–120. 8 indexed citations
13.
Arnold, E., et al.. (2002). High-field electron velocity in thin SOI films. 74–75.
14.
Merchant, S., E. Arnold, Helmut Baumgart, et al.. (2002). Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors. 124–128. 53 indexed citations
15.
Letavic, Ted, et al.. (2002). 600 V single-chip power conversion system based on thin layer silicon-on-insulator. 133–134. 2 indexed citations
16.
Letavic, Ted, et al.. (2002). A high–speed monolithic amplifier for CRT drivers in SOI. 507–510. 3 indexed citations
17.
Arnold, E., Ted Letavic, & S. P. Herko. (1999). High-field electron velocity in silicon surface-accumulation layers. IEEE Electron Device Letters. 20(9). 490–492. 2 indexed citations
18.
Arnold, E., et al.. (1996). High-temperature off-state characteristics of thin-SOI power devices. IEEE Electron Device Letters. 17(12). 557–559. 8 indexed citations
19.
Wu, Shiping, Ted Letavic, R.J. Gutmann, & E. W. Maby. (1988). Lateral PIN diodes for silicon-on-insulator monolithic microwave integrated circuits. Solid-State Electronics. 31(9). 1397–1400.
20.
Letavic, Ted, E. W. Maby, & R.J. Gutmann. (1987). Zone-Melting Recrystallization of Silicon on Alumina. MRS Proceedings. 107. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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