R.W.H. Engelmann

675 total citations
39 papers, 506 citations indexed

About

R.W.H. Engelmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, R.W.H. Engelmann has authored 39 papers receiving a total of 506 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in R.W.H. Engelmann's work include Semiconductor Quantum Structures and Devices (26 papers), Semiconductor Lasers and Optical Devices (20 papers) and Photonic and Optical Devices (9 papers). R.W.H. Engelmann is often cited by papers focused on Semiconductor Quantum Structures and Devices (26 papers), Semiconductor Lasers and Optical Devices (20 papers) and Photonic and Optical Devices (9 papers). R.W.H. Engelmann collaborates with scholars based in United States, Germany and Brazil. R.W.H. Engelmann's co-authors include C.A. Liechti, D.E. Ackley, K. Alavi, C.L. Shieh, G. Lengyel, C. F. Quate, T. Wolf, Yijun Cai, Wolfgang Frey and H. Pöllmann and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

R.W.H. Engelmann

35 papers receiving 456 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
R.W.H. Engelmann	446	395	34	30	28	39	506
C. Minot	202 0.5×	308 0.8×	27 0.8×	15 0.5×	25 0.9×	41	356
J. Y. Tang	583 1.3×	432 1.1×	35 1.0×	17 0.6×	20 0.7×	14	668
W.R. Hitchens	422 0.9×	308 0.8×	37 1.1×	46 1.5×	14 0.5×	28	477
S.Y. Narayan	440 1.0×	335 0.8×	36 1.1×	29 1.0×	126 4.5×	52	482
S.D. Benjamin	380 0.9×	292 0.7×	22 0.6×	40 1.3×	14 0.5×	28	438
A. Alping	725 1.6×	242 0.6×	19 0.6×	32 1.1×	15 0.5×	48	763
Tony Watkins	240 0.5×	245 0.6×	44 1.3×	26 0.9×	7 0.3×	7	346
Gideon Yoffe	574 1.3×	285 0.7×	20 0.6×	23 0.8×	7 0.3×	50	624
H. Takanashi	285 0.6×	216 0.5×	29 0.9×	24 0.8×	6 0.2×	28	331
U. D. Keil	650 1.5×	459 1.2×	21 0.6×	81 2.7×	15 0.5×	36	707

Countries citing papers authored by R.W.H. Engelmann

Since Specialization

Citations

This map shows the geographic impact of R.W.H. Engelmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.W.H. Engelmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.W.H. Engelmann more than expected).

Fields of papers citing papers by R.W.H. Engelmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.W.H. Engelmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.W.H. Engelmann. The network helps show where R.W.H. Engelmann may publish in the future.

Co-authorship network of co-authors of R.W.H. Engelmann

This figure shows the co-authorship network connecting the top 25 collaborators of R.W.H. Engelmann. A scholar is included among the top collaborators of R.W.H. Engelmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.W.H. Engelmann. R.W.H. Engelmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Engelmann, R.W.H., et al.. (1995). Double layers of single domains formed by rapid thermal annealing of proton-exchanged LiTaO3. Applied Physics Letters. 67(13). 1812–1814.

Engelmann, R.W.H., et al.. (1993). Spectral dependence of differential gain, mode shift, and linewidth enhancement factor in a InGaAs-GaAs strained-layer single-quantum-well laser operated under high-injection conditions. IEEE Journal of Quantum Electronics. 29(1). 69–75. 16 indexed citations

Lengyel, G., et al.. (1990). A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures. IEEE Journal of Quantum Electronics. 26(2). 296–304. 45 indexed citations

Shieh, C.L., et al.. (1990). Simple batch processing for forming high-reflective mirrors of short-cavity AlGaAs/GaAs lasers. IEEE Photonics Technology Letters. 2(3). 159–161. 2 indexed citations

Engelmann, R.W.H., et al.. (1989). Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters. 55(1). 70–72. 32 indexed citations

Shieh, C.L., et al.. (1989). Self-aligned index-guided multiple quantum well laser by sulphur diffusion-induced disordering. Electronics Letters. 25(6). 378–379. 1 indexed citations

Alavi, K., et al.. (1988). Experimental determination of electroabsorption in GaAs/Al _0.32 Ga _0.68 As multiple quantum well structures as function of well width. Electronics Letters. 24(25). 1555–1557. 11 indexed citations

Engelmann, R.W.H., et al.. (1986). Control of astigmatism in proton isolated stripe aigaas double heterostructure lasers. 133(4). 267–272. 1 indexed citations

Engelmann, R.W.H., et al.. (1983). Life Test of 30 mW GaAlAs TAL Laser Grown by OMVPE. Japanese Journal of Applied Physics. 22(7A). L455–L455. 6 indexed citations

10.

Engelmann, R.W.H., et al.. (1982). A gain-guided-stripe diode laser with a single longitudinal mode, high kink power, and minimal beam distortion. 350–353. 5 indexed citations

11.

Ackley, D.E. & R.W.H. Engelmann. (1981). High-power leaky-mode multiple-stripe laser. Applied Physics Letters. 39(1). 27–29. 56 indexed citations

12.

Ackley, D.E. & R.W.H. Engelmann. (1980). Twin-stripe injection laser with leaky-mode coupling. Applied Physics Letters. 37(10). 866–868. 12 indexed citations

13.

Engelmann, R.W.H., et al.. (1979). Lateral waveguiding in stripe-geometry double-heterostructure lasers below the lasing threshold. IEEE Journal of Quantum Electronics. 15(8). 740–743. 8 indexed citations

14.

Engelmann, R.W.H. & C.A. Liechti. (1977). Bias dependence of GaAs and InP MESFET parameters. IEEE Transactions on Electron Devices. 24(11). 1288–1296. 63 indexed citations

15.

Engelmann, R.W.H., et al.. (1975). Gunn-effect electronics. Pitman eBooks. 33 indexed citations

16.

Engelmann, R.W.H., et al.. (1972). Stability criterion for semiconductor plates with negative AC mobility. Proceedings of the IEEE. 60(7). 914–915. 1 indexed citations

17.

Pöllmann, H., et al.. (1969). Influence of circuit parameters on Gunn-oscillator performance. Electronics Letters. 5(20). 492–494. 1 indexed citations

18.

Engelmann, R.W.H.. (1969). On the transverse surface boundary effect in Gunn devices. Proceedings of the IEEE. 57(5). 818–819. 1 indexed citations

19.

Engelmann, R.W.H., et al.. (1966). Oscillations in bulk GaAs due to an equivalent negative RF conductance. Proceedings of the IEEE. 54(5). 786–788. 2 indexed citations

20.

Engelmann, R.W.H. & C. F. Quate. (1966). Linear, or "Small-signal," theory for the Gunn effect. IEEE Transactions on Electron Devices. ED-13(1). 44–52. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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