T. Ivanov

492 total citations
38 papers, 380 citations indexed

About

T. Ivanov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Ivanov has authored 38 papers receiving a total of 380 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in T. Ivanov's work include Semiconductor materials and devices (14 papers), Thin-Film Transistor Technologies (11 papers) and Mechanical and Optical Resonators (8 papers). T. Ivanov is often cited by papers focused on Semiconductor materials and devices (14 papers), Thin-Film Transistor Technologies (11 papers) and Mechanical and Optical Resonators (8 papers). T. Ivanov collaborates with scholars based in Bulgaria, Germany and Greece. T. Ivanov's co-authors include V.K. Gueorguiev, C.A. Dimitriadis, Ivo W. Rangelow, G. Kamarinos, J. Brini, Constantinos T. Angelis, Teodor Gotszalk, N. Abedinov, P. Grabiec and I. Samaras and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

T. Ivanov

35 papers receiving 370 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Ivanov Bulgaria 11 301 132 99 73 38 38 380
B. A. Ek United States 10 269 0.9× 111 0.8× 140 1.4× 80 1.1× 15 0.4× 12 316
I. Torres Spain 11 311 1.0× 61 0.5× 88 0.9× 66 0.9× 93 2.4× 32 359
Th.W Matthes Germany 11 326 1.1× 320 2.4× 258 2.6× 124 1.7× 18 0.5× 14 510
Chao‐Hsin Chien Taiwan 13 513 1.7× 100 0.8× 234 2.4× 82 1.1× 37 1.0× 50 554
Régis Rogel France 12 296 1.0× 49 0.4× 134 1.4× 205 2.8× 12 0.3× 44 354
D. Mencaraglia France 13 602 2.0× 78 0.6× 345 3.5× 64 0.9× 97 2.6× 42 626
T.S.Y. Moh Netherlands 8 287 1.0× 139 1.1× 40 0.4× 183 2.5× 10 0.3× 18 369
G. Agostinelli Belgium 11 621 2.1× 197 1.5× 266 2.7× 69 0.9× 14 0.4× 29 652
N. Buffet France 12 393 1.3× 101 0.8× 213 2.2× 132 1.8× 6 0.2× 29 452
K. Reimann Netherlands 12 252 0.8× 53 0.4× 111 1.1× 157 2.2× 35 0.9× 28 333

Countries citing papers authored by T. Ivanov

Since Specialization
Citations

This map shows the geographic impact of T. Ivanov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ivanov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ivanov more than expected).

Fields of papers citing papers by T. Ivanov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ivanov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ivanov. The network helps show where T. Ivanov may publish in the future.

Co-authorship network of co-authors of T. Ivanov

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ivanov. A scholar is included among the top collaborators of T. Ivanov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ivanov. T. Ivanov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nikiruy, K. E., T. Ivanov, Martin Ziegler, et al.. (2024). Next Generation Memristor Reservoir Computing. 912–917.
2.
Spassov, D., et al.. (2023). Charge trapping effects in nonvolatile memory cells with HfO2/Al2O3 nanolaminated trapping layer. Journal of Physics Conference Series. 2436(1). 12016–12016.
3.
4.
Spassov, D., A. Paskaleva, K. Fröhlich, & T. Ivanov. (2017). Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides. Journal of Physics Conference Series. 794. 12016–12016. 3 indexed citations
6.
Ivanov, T., et al.. (2012). ARCH-type micro-cantilever FPA for uncooled IR detection. Microelectronic Engineering. 98. 614–618. 9 indexed citations
7.
Hadjichristov, Georgi B., V.K. Gueorguiev, T. Ivanov, et al.. (2010). Electrical properties of PMMA ion-implanted with low-energy Si+beam. Journal of Physics Conference Series. 207. 12022–12022. 5 indexed citations
8.
Sarov, Y., et al.. (2010). Realization of cantilever arrays for parallel proximity imaging. Journal of Physics Conference Series. 253. 12050–12050. 4 indexed citations
9.
Hadjichristov, Georgi B., V.K. Gueorguiev, T. Ivanov, et al.. (2008). Silicon ion implanted PMMA for soft electronics. Organic Electronics. 9(6). 1051–1060. 27 indexed citations
10.
Frank, Andreas, Y. Sarov, T. Ivanov, et al.. (2008). Compact Modelling of Electrical, Mechanical and Thermal Behaviour for MEMS with SPICE. MRS Proceedings. 1083. 1 indexed citations
11.
Farmakis, Filippos, et al.. (2003). Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs). 1. 157–160. 3 indexed citations
12.
Domański, K., P. Grabiec, J. Marczewski, et al.. (2002). Fabrication and properties of piezoresistive cantilever beam with porous silicon element. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 48–52. 5 indexed citations
13.
Abedinov, N., T. Ivanov, B. Volland, et al.. (2001). Evaluation and fabrication of AFM array for ESA-Midas/Rosetta space mission. Microelectronic Engineering. 57-58. 825–831. 8 indexed citations
14.
Abedinov, N., et al.. (2001). Micromachined piezoresistive cantilever array with integrated resistive microheater for calorimetry and mass detection. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(6). 2884–2888. 60 indexed citations
15.
Gueorguiev, V.K., et al.. (2001). Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process. Materials Science and Engineering B. 83(1-3). 223–226. 5 indexed citations
16.
Angelis, Constantinos T., C.A. Dimitriadis, Filippos Farmakis, et al.. (2000). Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors. Applied Physics Letters. 76(1). 118–120. 5 indexed citations
17.
Gueorguiev, V.K., et al.. (2000). Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides. Microelectronics Journal. 31(8). 663–666. 5 indexed citations
18.
Ivanov, T., et al.. (1998). Vacuum deposited copper phthalocyanine thin films—structure and surface morphology. Vacuum. 51(2). 189–192. 10 indexed citations
19.
Dimitriadis, C.A., J. Brini, G. Kamarinos, V.K. Gueorguiev, & T. Ivanov. (1998). Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors. Journal of Applied Physics. 83(3). 1469–1475. 20 indexed citations
20.
Angelis, Constantinos T., C.A. Dimitriadis, I. Samaras, et al.. (1997). Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements. Journal of Applied Physics. 82(8). 4095–4101. 62 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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