D. Mencaraglia

739 total citations
42 papers, 626 citations indexed

About

D. Mencaraglia is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Mencaraglia has authored 42 papers receiving a total of 626 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Mencaraglia's work include Thin-Film Transistor Technologies (25 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Silicon and Solar Cell Technologies (18 papers). D. Mencaraglia is often cited by papers focused on Thin-Film Transistor Technologies (25 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Silicon and Solar Cell Technologies (18 papers). D. Mencaraglia collaborates with scholars based in France, Algeria and Portugal. D. Mencaraglia's co-authors include Jean‐Paul Kleider, Alain Rolland, Zakaria Djebbour, Christophe Longeaud, R. Brüggemann, A. Amaral, P. Destruel, Isabelle Séguy, Pascale Jolinat and Pere Roca i Cabarrocas and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Sensors and Actuators B Chemical.

In The Last Decade

D. Mencaraglia

42 papers receiving 617 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Mencaraglia France 13 602 345 97 78 64 42 626
J. C. Joshi India 9 395 0.7× 388 1.1× 107 1.1× 55 0.7× 67 1.0× 23 501
N. Kornilios Greece 8 227 0.4× 208 0.6× 149 1.5× 67 0.9× 86 1.3× 22 349
H. Rinnert France 10 328 0.5× 272 0.8× 25 0.3× 80 1.0× 54 0.8× 30 398
Yun Hi Lee South Korea 12 256 0.4× 246 0.7× 35 0.4× 64 0.8× 163 2.5× 23 423
Mitsuyuki Yamanaka Japan 14 490 0.8× 402 1.2× 34 0.4× 68 0.9× 87 1.4× 52 550
Guanglin Kong China 13 418 0.7× 389 1.1× 18 0.2× 34 0.4× 91 1.4× 47 468
Y. Kishi Japan 9 354 0.6× 268 0.8× 18 0.2× 47 0.6× 49 0.8× 22 400
T. Boƫilă Romania 12 311 0.5× 323 0.9× 22 0.2× 76 1.0× 44 0.7× 37 405
Shihua Huang China 12 477 0.8× 245 0.7× 134 1.4× 136 1.7× 37 0.6× 41 517
Shu-Tong Chang Taiwan 14 652 1.1× 287 0.8× 33 0.3× 124 1.6× 183 2.9× 87 717

Countries citing papers authored by D. Mencaraglia

Since Specialization
Citations

This map shows the geographic impact of D. Mencaraglia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Mencaraglia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Mencaraglia more than expected).

Fields of papers citing papers by D. Mencaraglia

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Mencaraglia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Mencaraglia. The network helps show where D. Mencaraglia may publish in the future.

Co-authorship network of co-authors of D. Mencaraglia

This figure shows the co-authorship network connecting the top 25 collaborators of D. Mencaraglia. A scholar is included among the top collaborators of D. Mencaraglia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Mencaraglia. D. Mencaraglia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bihan, Yann Le, et al.. (2016). Novel Wideband Eddy Current Device for the Conductivity Measurement of Semiconductors. IEEE Sensors Journal. 16(11). 4151–4152. 9 indexed citations
2.
3.
Djebbour, Zakaria, et al.. (2008). Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(11). 3449–3452. 2 indexed citations
4.
Mencaraglia, D., Zakaria Djebbour, Jean‐François Guillemoles, et al.. (2008). Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells. Thin Solid Films. 517(7). 2550–2553. 9 indexed citations
5.
Mencaraglia, D., et al.. (2007). Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition. Thin Solid Films. 516(20). 6999–7003. 7 indexed citations
6.
Djebbour, Zakaria, D. Mencaraglia, J.P. Connolly, et al.. (2006). Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements. Thin Solid Films. 515(15). 6233–6237. 8 indexed citations
7.
Canava, B., Jackie Vigneron, Arnaud Etchéberry, et al.. (2003). Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations. Thin Solid Films. 431-432. 289–295. 14 indexed citations
8.
Kleider, Jean‐Paul, et al.. (1997). Comparison of Al/SiN/a-Si:H and Al/SiO2/a-Si:H top gate structures under thermal bias stresses. Thin Solid Films. 296(1-2). 137–140. 2 indexed citations
9.
Guedj, C., J. Boulmer, D. Bouchier, et al.. (1996). Bulk and surface structural properties of Si1−x−yGexCy layers processed on Si(001) by pulsed laser induced epitaxy. Applied Surface Science. 102. 28–32. 2 indexed citations
10.
Kleider, Jean‐Paul, et al.. (1996). Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures. Journal of Non-Crystalline Solids. 198-200. 318–321. 1 indexed citations
11.
Kleider, Jean‐Paul & D. Mencaraglia. (1995). Theoretical study of the quasistatic capacitance of metal–insulator–semiconductor structures in amorphous semiconductors. Journal of Applied Physics. 78(6). 3857–3866. 12 indexed citations
12.
Tonneau, D., et al.. (1993). Laser-induced deposition of aluminium on gallium arsenide and silicon nitride from trimethylamine alane. Applied Surface Science. 69(1-4). 305–309. 1 indexed citations
13.
Bourée, J.E., et al.. (1993). Laser‐induced deposition of aluminium on gallium arsenide from trimethylamine alane. Advanced Materials for Optics and Electronics. 2(1-2). 53–61. 2 indexed citations
14.
Kleider, Jean‐Paul, et al.. (1991). Field-profile determination in amorphous Si-Ge alloy Schottky barriers. Philosophical Magazine B. 64(3). 367–387. 4 indexed citations
15.
Longeaud, Christophe, et al.. (1990). Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments. MRS Proceedings. 192. 1 indexed citations
16.
Kleider, Jean‐Paul, D. Mencaraglia, & Zakaria Djebbour. (1989). A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys. Journal of Non-Crystalline Solids. 114. 432–434. 20 indexed citations
17.
Godet, C., et al.. (1989). Evolution of the density of states profile above midgap in a-SiGe:H alloys from complementary transport measurements. Journal of Non-Crystalline Solids. 114. 534–536. 1 indexed citations
18.
Mencaraglia, D. & Jean‐Paul Kleider. (1987). Transition from diffusive to ballistic capture related to hydrogen incorporation in amorphous silicon. Philosophical Magazine Letters. 55(2). 63–68. 4 indexed citations
19.
Mencaraglia, D., et al.. (1985). Hydrogen influence on the optoelectronic properties of triode dc sputtered amorphous silicon: Disorder effects on deep gap states characteristics. Journal of Non-Crystalline Solids. 77-78. 319–322. 1 indexed citations
20.
Mencaraglia, D., A. Amaral, & Jean‐Paul Kleider. (1985). Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics. Journal of Applied Physics. 58(3). 1292–1301. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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