S.A. McQuaid

885 total citations
27 papers, 688 citations indexed

About

S.A. McQuaid is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.A. McQuaid has authored 27 papers receiving a total of 688 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.A. McQuaid's work include Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and devices (11 papers) and Silicon Nanostructures and Photoluminescence (9 papers). S.A. McQuaid is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Semiconductor materials and devices (11 papers) and Silicon Nanostructures and Photoluminescence (9 papers). S.A. McQuaid collaborates with scholars based in United Kingdom, United States and Spain. S.A. McQuaid's co-authors include R. C. Newman, M. J. Binns, R.C. Newman, James H. R. Tucker, E C Lightowlers, C. A. Londos, R. Pritchard, R. Falster, M. J. Ashwin and M. Missous and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S.A. McQuaid

27 papers receiving 667 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S.A. McQuaid United Kingdom 14 628 338 269 75 30 27 688
M. J. Binns United Kingdom 13 690 1.1× 376 1.1× 244 0.9× 79 1.1× 9 0.3× 26 744
R. Danielou France 12 265 0.4× 290 0.9× 114 0.4× 89 1.2× 24 0.8× 25 432
J.D. Woodhouse United States 9 305 0.5× 262 0.8× 177 0.7× 114 1.5× 69 2.3× 24 456
D. Bahnck United States 10 309 0.5× 128 0.4× 213 0.8× 64 0.9× 36 1.2× 21 423
Kenichi Ohtsuka Japan 11 292 0.5× 177 0.5× 146 0.5× 25 0.3× 45 1.5× 37 383
Nikolai Yarykin Russia 13 493 0.8× 156 0.5× 292 1.1× 84 1.1× 9 0.3× 72 536
A. Grob France 13 333 0.5× 124 0.4× 147 0.5× 169 2.3× 14 0.5× 42 421
C. Ance France 11 359 0.6× 242 0.7× 199 0.7× 26 0.3× 16 0.5× 35 425
J. M. Fairfield United States 12 588 0.9× 206 0.6× 374 1.4× 87 1.2× 13 0.4× 15 660
E. Garfunkel United States 7 403 0.6× 244 0.7× 94 0.3× 62 0.8× 33 1.1× 8 466

Countries citing papers authored by S.A. McQuaid

Since Specialization
Citations

This map shows the geographic impact of S.A. McQuaid's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.A. McQuaid with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.A. McQuaid more than expected).

Fields of papers citing papers by S.A. McQuaid

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.A. McQuaid. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.A. McQuaid. The network helps show where S.A. McQuaid may publish in the future.

Co-authorship network of co-authors of S.A. McQuaid

This figure shows the co-authorship network connecting the top 25 collaborators of S.A. McQuaid. A scholar is included among the top collaborators of S.A. McQuaid based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.A. McQuaid. S.A. McQuaid is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Flores, D., et al.. (2011). Improving the firing mechanisms in thyristors for lighting applications. 55. 1–4. 1 indexed citations
2.
Götz, Werner, Gerhard Pensl, W. Zulehner, R.C. Newman, & S.A. McQuaid. (1998). Thermal donor formation and annihilation at temperatures above 500 °C in Czochralski-grown Si. Journal of Applied Physics. 84(7). 3561–3568. 30 indexed citations
3.
McQuaid, S.A., et al.. (1997). Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas. Journal of Applied Physics. 81(11). 7612–7618. 7 indexed citations
4.
Pritchard, R., M. J. Ashwin, James H. R. Tucker, et al.. (1997). Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon. Physical review. B, Condensed matter. 56(20). 13118–13125. 124 indexed citations
5.
Binns, M. J., C. A. Londos, S.A. McQuaid, et al.. (1996). Novel aspects of oxygen diffusion in silicon. Journal of Materials Science Materials in Electronics. 7(5). 8 indexed citations
6.
McQuaid, S.A., et al.. (1996). The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clusters. Materials Science and Engineering B. 36(1-3). 171–174. 2 indexed citations
7.
McQuaid, S.A., et al.. (1995). Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms. Journal of Applied Physics. 77(4). 1427–1442. 70 indexed citations
8.
Pritchard, R., S.A. McQuaid, L. Hart, et al.. (1995). Native defects in low-temperature GaAs and the effect of hydrogenation. Journal of Applied Physics. 78(4). 2411–2422. 24 indexed citations
9.
Newman, R.C., et al.. (1995). Oxygen Aggregation Phenomena in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 47-48. 247–258. 1 indexed citations
10.
McQuaid, S.A., et al.. (1995). Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers. Materials science forum. 196-201. 1309–1314. 3 indexed citations
11.
Londos, C. A., et al.. (1993). Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C. Applied Physics Letters. 62(13). 1525–1526. 44 indexed citations
12.
Newman, R.C., M. J. Binns, S.A. McQuaid, & E C Lightowlers. (1993). Solubility of Hydrogen in Silicon at High Temperatures. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 32-33. 155–160. 8 indexed citations
13.
McQuaid, S.A., R. Pritchard, R. C. Newman, Steve O’Hagan, & M. Missous. (1993). Gallium vacancy related defects in silicon doped GaAs grown at low temperatures. Materials Science and Engineering B. 22(1). 23–26. 2 indexed citations
14.
McQuaid, S.A., R.C. Newman, M. Missous, & Steve O’Hagan. (1993). Heavily Si or Be doped MBE GaAs grown at low temperatures. Journal of Crystal Growth. 127(1-4). 515–518. 17 indexed citations
15.
Pajot, B., et al.. (1993). A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon. Materials science forum. 143-147. 969–974. 6 indexed citations
16.
Binns, M. J., S.A. McQuaid, R.C. Newman, & E C Lightowlers. (1993). Hydrogen solubility in silicon and hydrogen defects present after quenching. Semiconductor Science and Technology. 8(10). 1908–1911. 44 indexed citations
17.
McQuaid, S.A., R.C. Newman, & E C Lightowlers. (1992). Measurements Relating to the Solubility of Hydrogen in Silicon at High Temperatures. Materials science forum. 83-87. 93–98. 3 indexed citations
18.
McQuaid, S.A., R. C. Newman, M. Missous, & Steve O’Hagan. (1992). Evidence for donor-gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures. Applied Physics Letters. 61(25). 3008–3010. 33 indexed citations
19.
Newman, R. C., et al.. (1991). Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C. Journal of Applied Physics. 70(6). 3061–3070. 86 indexed citations
20.
McQuaid, S.A., et al.. (1991). Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C. Applied Physics Letters. 58(25). 2933–2935. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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