S. Ruffell

1.2k citations

52 papers · 992 indexed · h-index 19

Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 11
Materials Chemistry top 10%
- Diamond and Carbon-based Materials Research 22
Biomedical Engineering top 10%
- Advanced Surface Polishing Techniques 24
Atomic and Molecular Physics, and Optics top 10%
- Force Microscopy Techniques and Applications 6
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 16
- Integrated Circuits and Semiconductor Failure Analysis 13
- Silicon and Solar Cell Technologies 10
Computational Mechanics
- Ion-surface interactions and analysis 8

Co-authors: J. E. Bradby J. S. Williams Paul Munroe Bianca Haberl Oden L. Warren P. J. Simpson Andrew P. Knights Naoki Fujisawa
Cited by: Mechanics of Materials Materials Chemistry Biomedical Engineering
Journals: Journal of Applied Physics (17 papers)Applied Physics Letters (6 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (4 papers)
Partner nations: Australia Canada United States

In The Last Decade

S. Ruffell

51 papers receiving 976 citations

Peers

Countries citing papers authored by S. Ruffell

Since Specialization

Citations

This map shows the geographic impact of S. Ruffell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Ruffell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Ruffell more than expected).

Fields of papers citing papers by S. Ruffell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Ruffell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Ruffell. The network helps show where S. Ruffell may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Ruffell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Ruffell Line = papers co-authored together S. Ruffell links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Room temperature synthesis of HfO₂/HfO _x heterostructures by ion-implantation Nanotechnology ·Sanjoy Kumar Nandi,Dinesh Kumar Venkatachalam,S. Ruffell,V. Belokonev,P. L. Grande,M. Vos,R. G. Elliman	2018	5
2	Directed ribbon-beam capability for novel etching applications Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·S. Ruffell,O. T. Alishev	2015	3
3	Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM) Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·R. G. Elliman,Mohammad Sadeq Saleh,B. Vikknesh,Dinesh Kumar Venkatachalam,Julio Emmanuel,S. Ruffell,P. Kurunczi,V. Belokonev	2013	10
4	Defect complexes in fluorine-implanted germanium Journal of Physics D Applied Physics ·David Sprouster,Colin S. Campbell,S J Buckman,G. Impellizzeri,E. Napolitani,S. Ruffell,James P. Sullivan	2013	9
5	Formation and characterization of Ta2O5/TaOx films formed by O ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Ruffell,P. Kurunczi,V. Belokonev,Chun Kun Chung,J. Hautala,R. G. Elliman	2013	6
6	Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon Solar Energy Materials and Solar Cells ·Dorothy Henderson,S. Ruffell,M. Tucci,王璜生,Christian Samundsett,Sh. M. BARTYKHANOVA,L. Serenelli,Andrés Cuevas	2010	31
7	Nanoindentation-induced phase transformations in silicon at elevated temperatures Nanotechnology ·S. Ruffell,J. E. Bradby,J. S. Williams,三橋順一,Seyed Mohammad Tadayyon,L. L. Coatsworth,P.R. Norton	2009	50
8	Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions Journal of Applied Physics ·Naoki Fujisawa,S. Ruffell,J. E. Bradby,J. S. Williams,Bianca Haberl,Oden L. Warren	2009	29
9	Nanoindentation of ion-implanted crystalline germanium Physical Review B ·David J. Oliver,S. Ruffell,J. E. Bradby,J. S. Williams,Michael V. Swain,Paul Munroe,P. J. Simpson	2009	10
10	Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon Journal of Applied Physics ·S. Ruffell,Bianca Haberl,Steven P. Koenig,J. E. Bradby,J. S. Williams	2009	44
11	Formation of ordered arrays of gold particles on silicon and silicon-dioxide by nanoindentation patterning MRS Proceedings ·S. Ruffell,Dinesh Kumar Venkatachalam,Avi Shalav,R. G. Elliman	2009	1
12	Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon Journal of Applied Physics ·S. Ruffell,H. Staub,J. E. Bradby,J. S. Williams,Bianca Haberl	2009	10
13	Thermal evolution of defects produced by implantation of H, D and He in Silicon Applied Surface Science ·P. J. Simpson,Andrew P. Knights,M. Chicoine,E.H. Dahlberg,Oussama Moutanabbir,S. Ruffell,F. Schiettekatte,B. Terreault	2008	13
14	Effects of carbon on ion-implantation-induced disorder in GaN Applied Physics Letters ·S. O. Kucheyev,J. E. Bradby,김창아,S. Ruffell,T. van Buuren,T. E. Felter	2007	23
15	Segregation and precipitation of Er in Ge Applied Physics Letters ·S. O. Kucheyev,J. E. Bradby,S. Ruffell,김창아,T. E. Felter,A. V. Hamza	2007	7
16	Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation Journal of Applied Physics ·S. Ruffell,I. V. Mitchell,P. J. Simpson	2005	8
17	Annealing behavior of low-energy ion-implanted phosphorus in silicon Journal of Applied Physics ·S. Ruffell,I. V. Mitchell,P. J. Simpson	2005	28
18	Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Ruffell,I.V. Mitchell,Giovana Cristina de [UNESP] Moura	2005	4
19	Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. A. Bolorizadeh,S. Ruffell,I. V. Mitchell,R. Gwilliam	2004	13
20	Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs Journal of Applied Physics ·Andrew P. Knights,S. Ruffell,P. J. Simpson	2000	11

About S. Ruffell

S. Ruffell is a scholar working on Structural Biology, Materials Chemistry, Biomedical Engineering, Mechanics of Materials and Electrical and Electronic Engineering, having authored 52 papers that have together received 992 indexed citations. Recurring topics across this work include Advanced Surface Polishing Techniques (24 papers), Diamond and Carbon-based Materials Research (22 papers), Semiconductor materials and devices (16 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Metal and Thin Film Mechanics (11 papers), Silicon and Solar Cell Technologies (10 papers), Ion-surface interactions and analysis (8 papers) and Force Microscopy Techniques and Applications (6 papers). The work is most often cited by research in Mechanics of Materials (331 citations), Materials Chemistry (581 citations), Biomedical Engineering (478 citations), Atomic and Molecular Physics, and Optics (312 citations) and Electrical and Electronic Engineering (472 citations). S. Ruffell has collaborated with scholars based in Australia, Canada and United States. Frequent co-authors include J. E. Bradby, J. S. Williams, Paul Munroe, Bianca Haberl, Oden L. Warren, P. J. Simpson, Andrew P. Knights, Naoki Fujisawa, I. V. Mitchell and R. G. Elliman. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of materials research/Pratt's guide to venture capital sources and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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