Ruozheng Wang

1.0k total citations
58 papers, 794 citations indexed

About

Ruozheng Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Ruozheng Wang has authored 58 papers receiving a total of 794 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 43 papers in Materials Chemistry and 14 papers in Mechanics of Materials. Recurrent topics in Ruozheng Wang's work include Diamond and Carbon-based Materials Research (39 papers), Semiconductor materials and devices (35 papers) and Metal and Thin Film Mechanics (12 papers). Ruozheng Wang is often cited by papers focused on Diamond and Carbon-based Materials Research (39 papers), Semiconductor materials and devices (35 papers) and Metal and Thin Film Mechanics (12 papers). Ruozheng Wang collaborates with scholars based in China, Japan and United States. Ruozheng Wang's co-authors include Hongxing Wang, Feiyu Kang, Jie Liao, Peichao Zou, Cheng Yang, Chao Xu, Wei Wang, Ziyin Lin, Genqiang Chen and Baohua Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Ruozheng Wang

51 papers receiving 785 citations

Peers

Ruozheng Wang

EEE

EOMM

Dominik Jaeger Switzerland

Di Xu China

Pawan K. Tyagi India

M. Kamruddin India

Jau-Shiung Fang Taiwan

Thomas Kups Germany

Igor Bello Hong Kong

Takashi Matsumae Japan

Joel T. Abrahamson United States

Sk. Faruque Ahmed India

Dominik Jaeger Switzerland

Ruozheng Wang

360 ×0.7

EEE

442 ×1.2

199 ×0.9

EOMM

187 ×1.3

73 ×0.6

Citations per year, relative to Ruozheng Wang Ruozheng Wang (= 1×) peers Dominik Jaeger

Countries citing papers authored by Ruozheng Wang

Since Specialization

Citations

This map shows the geographic impact of Ruozheng Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ruozheng Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ruozheng Wang more than expected).

Fields of papers citing papers by Ruozheng Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ruozheng Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ruozheng Wang. The network helps show where Ruozheng Wang may publish in the future.

Co-authorship network of co-authors of Ruozheng Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Ruozheng Wang. A scholar is included among the top collaborators of Ruozheng Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ruozheng Wang. Ruozheng Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Genqiang, Shumiao Zhang, Jia Zeng, et al.. (2024). Vertical diamond Schottky barrier diodes with curved field plates. Applied Physics Letters. 124(23). 4 indexed citations

Li, Jie, Wanru Zhao, Li He, et al.. (2024). Enhancement of the Gain and Stability in a Discrete Dynode Electron Multiplier Through Differential Voltage Distribution Among Dynodes. IEEE Transactions on Electron Devices. 72(1). 439–444.

Wang, Liang, et al.. (2024). The luminescence study of GeV centers and damage in diamond induced by 300keV Ge ion implantation. Vacuum. 222. 113074–113074. 2 indexed citations

Zhang, Shumiao, Wei Wang, Ruozheng Wang, et al.. (2024). Diamond/SnO₂ Heterojunction p-n Diodes With Ion/off of 10⁸ and Breakdown Voltage Over 400 V. IEEE Electron Device Letters. 45(8). 1496–1499. 2 indexed citations

Fei, Wang, Wei Wang, Genqiang Chen, et al.. (2024). Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method. Diamond and Related Materials. 143. 110905–110905.

Chen, Genqiang, Wei Wang, Fang Lin, et al.. (2023). Gate leakage suppression of normally-OFF diamond FET by employing MOS-MES hybrid gate structure. Diamond and Related Materials. 142. 110745–110745.

Wang, Juan, Genqiang Chen, S. He, et al.. (2023). Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate. Diamond and Related Materials. 134. 109799–109799. 7 indexed citations

Zhang, Shumiao, Juan Wang, Ruozheng Wang, et al.. (2023). High breakdown electric field diamond Schottky barrier diode with HfO2 field plate. Applied Physics Letters. 122(20). 12 indexed citations

Wang, Ruozheng, Juan Wang, Gang Niu, et al.. (2022). The clarification of leakage conduction mechanism of HfO2/SiNx stacked a-IGZO TFT and its variation at high temperature. Applied Physics Letters. 121(23). 2 indexed citations

10.

Wang, Ruozheng, Fang Lin, Gang Niu, et al.. (2022). Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation. Materials. 15(2). 444–444. 15 indexed citations

11.

Wang, Juan, Genqiang Chen, Shi He, et al.. (2022). Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure. IEEE Electron Device Letters. 43(11). 1937–1940. 14 indexed citations

12.

Wang, Ruozheng, Liang Wang, Bo Peng, et al.. (2022). Temperature dependence of germanium vacancy centers in high-quality diamond after 300 keV ion implantation. Journal of Applied Physics. 132(22). 1 indexed citations

13.

Wang, Juan, Genqiang Chen, Zhiqiang Song, et al.. (2022). Vertical Diamond Trench MOS Barrier Schottky Diodes With High Breakdown Voltage. IEEE Transactions on Electron Devices. 69(11). 6231–6235. 8 indexed citations

14.

Chen, Genqiang, Wei Wang, Han Shi, et al.. (2022). Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric. Applied Physics Letters. 121(16). 8 indexed citations

15.

Wang, Ruozheng, Fang Lin, Qiang Wei, Gang Niu, & Hongxing Wang. (2022). Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates. Materials. 15(2). 624–624. 6 indexed citations

16.

He, Shi, Yanfeng Wang, Genqiang Chen, et al.. (2022). Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. Materials. 15(14). 5082–5082. 1 indexed citations

17.

Wang, Ruozheng, Qiang Wei, Jie Li, et al.. (2021). Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors. Coatings. 11(11). 1381–1381.

18.

Wei, Qiang, Xiaofan Zhang, Fang Lin, et al.. (2021). Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser. Materials. 14(11). 3006–3006. 14 indexed citations

19.

Zhu, Tianfei, Yan Liang, Jiao Fu, et al.. (2020). Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds. Coatings. 10(6). 513–513. 2 indexed citations

20.

Zhang, He, Yaogong Wang, Ruozheng Wang, Xiaoning Zhang, & Chunliang Liu. (2019). Optimizing the Properties of InGaZnOx Thin Film Transistors by Adjusting the Adsorbed Degree of Cs+ Ions. Materials. 12(14). 2300–2300. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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