Runchen Fang

733 total citations
25 papers, 612 citations indexed

About

Runchen Fang is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Runchen Fang has authored 25 papers receiving a total of 612 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 6 papers in Polymers and Plastics and 4 papers in Materials Chemistry. Recurrent topics in Runchen Fang's work include Advanced Memory and Neural Computing (14 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Runchen Fang is often cited by papers focused on Advanced Memory and Neural Computing (14 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Runchen Fang collaborates with scholars based in United States and China. Runchen Fang's co-authors include Wenhao Chen, Shimeng Yu, Weijie Yu, Hugh Barnaby, Shi‐Jin Ding, Michael N. Kozicki, Ying‐Zhong Shen, Yueqin Li, Wen Yang and Ligang Gao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Runchen Fang

25 papers receiving 598 citations

Peers

Runchen Fang
Comparison fields: 5 of 46
  • Electrical and Electronic Engineering 535
  • Polymers and Plastics 182
  • Materials Chemistry 133
  • Cellular and Molecular Neuroscience 133
  • Hardware and Architecture 48
L. Altimime Belgium
Damian Walczyk Germany
Shuichiro Yasuda United States
Qi Lin China
H. Sunamura Japan
S. Z. Rahaman Taiwan
M. Park United States
Anja Wedig Germany
Qingyun Zuo China
Nobuyoshi Awaya Japan
L. Altimime Belgium View profile →
Citations per field, relative to Runchen Fang
Runchen Fang · 1×
Citations per year, relative to Runchen Fang
Runchen Fang · 1×

Countries citing papers authored by Runchen Fang

Since Specialization
Citations

This map shows the geographic impact of Runchen Fang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Runchen Fang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Runchen Fang more than expected).

Fields of papers citing papers by Runchen Fang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Runchen Fang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Runchen Fang. The network helps show where Runchen Fang may publish in the future.

Co-authorship network of co-authors of Runchen Fang

This figure shows the co-authorship network connecting the top 25 collaborators of Runchen Fang. A scholar is included among the top collaborators of Runchen Fang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Runchen Fang. Runchen Fang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Title Journal Authors Indexed citations
1 An open hollow polyoxovanadate cage based on {Nb(V5)} pentagons with size-selective encapsulation properties Chemical Communications Runchen Fang, Jing Dong et al. 2
2 Graphene-Metamaterial Quadruple PIT: Polarization, Sensing, and Slow Light Plasmonics Kunhua Wen, Haolin Wu et al. 1
3 Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device Nanotechnology Xuanqi Huang, Runchen Fang et al. 12
4 A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells Nanotechnology Wenhao Chen, Runchen Fang et al. 67
5 Low-Temperature Characteristics of HfO<sub><italic>x</italic></sub>-Based Resistive Random Access Memory IEEE Electron Device Letters Runchen Fang, Wenhao Chen et al. 92
6 A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells IEEE Transactions on Nuclear Science Wenhao Chen, Hugh Barnaby et al. 24
7 Exploiting resistive cross-point array for compact design of physical unclonable function Pai-Yu Chen, Runchen Fang et al. 46
8 High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition Nanoscale Research Letters Runchen Fang, Qingqing Sun et al. 95
9 Performance improvement by stack structure in flexible resistive random access memory Runchen Fang, Wen Yang et al. 1
10 The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization Current Applied Physics Wen Yang, Qingqing Sun et al. 10
11 Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Runchen Fang, Wen Yang et al. 7
12 Rewritable and Non‐Volatile Memory Effects Based on Polyimides Containing Pendant Carbazole and Triphenylamine Groups Macromolecular Chemistry and Physics Yueqin Li, Runchen Fang et al. 26
13 Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups Journal of Materials Chemistry Yueqin Li, Runchen Fang et al. 53
14 Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups Polymer Yueqin Li, Yueying Chu et al. 63
15 A two-dimensional analysis of sheet and contact resistance effects in basic cells of gate-array circuits IEEE Journal of Solid-State Circuits Runchen Fang, K. Y. L. Su et al. 2
16 Defect Characteristics and Generation Mechanism in a Bird Beak Free Structure by Sidewall Masked Technique Journal of The Electrochemical Society Runchen Fang, K.Y. Chiu et al. 6
17 Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding mos structures Solid-State Electronics Runchen Fang 3
18 The SWAMI - A Defect Free and Near-Zero Bird's Beak Local Oxidation Technology for VLSI Symposium on VLSI Technology K.Y. Chiu, Runchen Fang et al. 2
19 The SWAMI - A defect free and near-zero bird's-beak local oxidation process and its application in VLSI technology K.Y. Chiu, Runchen Fang et al. 9
20 Ga-In-As solidus isotherms developed by the step-grading technique Journal of Applied Physics S. M. Bedair, Runchen Fang et al. 7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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