Runchen Fang

733 total citations
25 papers, 612 citations indexed

About

Runchen Fang is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Runchen Fang has authored 25 papers receiving a total of 612 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 6 papers in Polymers and Plastics and 4 papers in Materials Chemistry. Recurrent topics in Runchen Fang's work include Advanced Memory and Neural Computing (14 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Runchen Fang is often cited by papers focused on Advanced Memory and Neural Computing (14 papers), Semiconductor materials and devices (14 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). Runchen Fang collaborates with scholars based in United States and China. Runchen Fang's co-authors include Wenhao Chen, Shimeng Yu, Weijie Yu, Hugh Barnaby, Shi‐Jin Ding, Michael N. Kozicki, Ying‐Zhong Shen, Yueqin Li, Wen Yang and Ligang Gao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Runchen Fang

25 papers receiving 598 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Runchen Fang United States 11 535 182 133 133 48 25 612
L. Altimime Belgium 19 1.3k 2.4× 191 1.0× 323 2.4× 235 1.8× 33 0.7× 48 1.3k
Damian Walczyk Germany 16 900 1.7× 136 0.7× 332 2.5× 202 1.5× 19 0.4× 22 996
Shuichiro Yasuda United States 6 305 0.6× 96 0.5× 122 0.9× 62 0.5× 8 0.2× 9 331
Qi Lin China 12 345 0.6× 73 0.4× 222 1.7× 62 0.5× 8 0.2× 29 443
H. Sunamura Japan 10 734 1.4× 127 0.7× 329 2.5× 146 1.1× 7 0.1× 14 813
S. Z. Rahaman Taiwan 17 830 1.6× 214 1.2× 202 1.5× 233 1.8× 6 0.1× 49 859
M. Park United States 4 572 1.1× 161 0.9× 253 1.9× 144 1.1× 7 0.1× 10 604
Anja Wedig Germany 8 618 1.2× 165 0.9× 232 1.7× 256 1.9× 5 0.1× 11 754
Qingyun Zuo China 9 871 1.6× 259 1.4× 212 1.6× 214 1.6× 7 0.1× 24 877
Nobuyoshi Awaya Japan 12 608 1.1× 153 0.8× 243 1.8× 67 0.5× 6 0.1× 22 679

Countries citing papers authored by Runchen Fang

Since Specialization
Citations

This map shows the geographic impact of Runchen Fang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Runchen Fang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Runchen Fang more than expected).

Fields of papers citing papers by Runchen Fang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Runchen Fang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Runchen Fang. The network helps show where Runchen Fang may publish in the future.

Co-authorship network of co-authors of Runchen Fang

This figure shows the co-authorship network connecting the top 25 collaborators of Runchen Fang. A scholar is included among the top collaborators of Runchen Fang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Runchen Fang. Runchen Fang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fang, Runchen, Jing Dong, Yeqin Feng, et al.. (2025). An open hollow polyoxovanadate cage based on {Nb(V5)} pentagons with size-selective encapsulation properties. Chemical Communications. 61(33). 6182–6185. 2 indexed citations
2.
Wen, Kunhua, et al.. (2025). Graphene-Metamaterial Quadruple PIT: Polarization, Sensing, and Slow Light. Plasmonics. 20(10). 8479–8490. 1 indexed citations
3.
Huang, Xuanqi, Runchen Fang, Chen Yang, et al.. (2019). Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device. Nanotechnology. 30(21). 215201–215201. 12 indexed citations
4.
Chen, Wenhao, Runchen Fang, Weijie Yu, et al.. (2016). A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. Nanotechnology. 27(25). 255202–255202. 67 indexed citations
5.
Fang, Runchen, Wenhao Chen, Ligang Gao, Weijie Yu, & Shimeng Yu. (2015). Low-Temperature Characteristics of HfO<sub><italic>x</italic></sub>-Based Resistive Random Access Memory. IEEE Electron Device Letters. 36(6). 567–569. 92 indexed citations
6.
Chen, Wenhao, Hugh Barnaby, Michael N. Kozicki, et al.. (2015). A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells. IEEE Transactions on Nuclear Science. 62(6). 2404–2411. 24 indexed citations
7.
Chen, Pai-Yu, Runchen Fang, Rui Liu, et al.. (2015). Exploiting resistive cross-point array for compact design of physical unclonable function. 26–31. 46 indexed citations
8.
Fang, Runchen, Qingqing Sun, Peng Zhou, et al.. (2013). High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition. Nanoscale Research Letters. 8(1). 92–92. 95 indexed citations
9.
Fang, Runchen, Wen Yang, Qingqing Sun, et al.. (2012). Performance improvement by stack structure in flexible resistive random access memory. 32. 1–3. 1 indexed citations
10.
Yang, Wen, Qingqing Sun, Runchen Fang, et al.. (2012). The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization. Current Applied Physics. 12(6). 1445–1447. 10 indexed citations
11.
Fang, Runchen, et al.. (2012). Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer deposition. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(2). 7 indexed citations
12.
Li, Yueqin, Runchen Fang, Shi‐Jin Ding, & Ying‐Zhong Shen. (2011). Rewritable and Non‐Volatile Memory Effects Based on Polyimides Containing Pendant Carbazole and Triphenylamine Groups. Macromolecular Chemistry and Physics. 212(21). 2360–2370. 26 indexed citations
13.
Li, Yueqin, Runchen Fang, Anmin Zheng, et al.. (2011). Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups. Journal of Materials Chemistry. 21(39). 15643–15643. 53 indexed citations
14.
Li, Yueqin, Yueying Chu, Runchen Fang, et al.. (2011). Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups. Polymer. 53(1). 229–240. 63 indexed citations
15.
Fang, Runchen, et al.. (1985). A two-dimensional analysis of sheet and contact resistance effects in basic cells of gate-array circuits. IEEE Journal of Solid-State Circuits. 20(2). 481–488. 2 indexed citations
16.
Fang, Runchen, K.Y. Chiu, & J.L. Moll. (1983). Defect Characteristics and Generation Mechanism in a Bird Beak Free Structure by Sidewall Masked Technique. Journal of The Electrochemical Society. 130(1). 190–196. 6 indexed citations
17.
Fang, Runchen. (1983). Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding mos structures. Solid-State Electronics. 26(1). 25–32. 3 indexed citations
18.
Chiu, K.Y., et al.. (1982). The SWAMI - A Defect Free and Near-Zero Bird's Beak Local Oxidation Technology for VLSI. Symposium on VLSI Technology. 28–29. 2 indexed citations
19.
20.
Bedair, S. M., et al.. (1980). Ga-In-As solidus isotherms developed by the step-grading technique. Journal of Applied Physics. 51(10). 5413–5418. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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