Agostino Pirovano

853 total citations
16 papers, 671 citations indexed

About

Agostino Pirovano is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Agostino Pirovano has authored 16 papers receiving a total of 671 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Agostino Pirovano's work include Phase-change materials and chalcogenides (13 papers), Advanced Memory and Neural Computing (8 papers) and Chalcogenide Semiconductor Thin Films (6 papers). Agostino Pirovano is often cited by papers focused on Phase-change materials and chalcogenides (13 papers), Advanced Memory and Neural Computing (8 papers) and Chalcogenide Semiconductor Thin Films (6 papers). Agostino Pirovano collaborates with scholars based in Italy, United States and France. Agostino Pirovano's co-authors include Roberto Bez, Daniele Ielmini, Stefano Ambrogio, Nicola Ciocchini, Paolo Fantini, Mario Laudato, Valerio Milo, Andrea L. Lacaita, Mattia Boniardi and Simone Lavizzari and has published in prestigious journals such as Nature Nanotechnology, Chemistry of Materials and IEEE Transactions on Electron Devices.

In The Last Decade

Agostino Pirovano

15 papers receiving 650 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Agostino Pirovano Italy 12 607 390 127 105 79 16 671
Alvaro Padilla United States 10 705 1.2× 330 0.8× 147 1.2× 119 1.1× 38 0.5× 12 755
R. Cheek United States 15 689 1.1× 559 1.4× 139 1.1× 59 0.6× 117 1.5× 31 768
N. Castellani France 16 697 1.1× 269 0.7× 94 0.7× 99 0.9× 46 0.6× 57 739
Danian Dong China 12 684 1.1× 275 0.7× 100 0.8× 130 1.2× 159 2.0× 54 845
Yongmo Park United States 10 576 0.9× 388 1.0× 94 0.7× 161 1.5× 125 1.6× 17 847
Nicola Ciocchini Italy 11 556 0.9× 310 0.8× 132 1.0× 123 1.2× 53 0.7× 19 588
Benjamin Grisafe United States 20 1.0k 1.7× 430 1.1× 56 0.4× 80 0.8× 73 0.9× 35 1.1k
Congyan Lu China 18 841 1.4× 302 0.8× 162 1.3× 151 1.4× 42 0.5× 63 927
Scott W. Fong United States 10 696 1.1× 599 1.5× 233 1.8× 73 0.7× 83 1.1× 20 861
Hsiang-Lan Lung Taiwan 10 566 0.9× 300 0.8× 93 0.7× 65 0.6× 50 0.6× 32 631

Countries citing papers authored by Agostino Pirovano

Since Specialization
Citations

This map shows the geographic impact of Agostino Pirovano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Agostino Pirovano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Agostino Pirovano more than expected).

Fields of papers citing papers by Agostino Pirovano

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Agostino Pirovano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Agostino Pirovano. The network helps show where Agostino Pirovano may publish in the future.

Co-authorship network of co-authors of Agostino Pirovano

This figure shows the co-authorship network connecting the top 25 collaborators of Agostino Pirovano. A scholar is included among the top collaborators of Agostino Pirovano based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Agostino Pirovano. Agostino Pirovano is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Fantini, Paolo, E. Varesi, Agostino Pirovano, et al.. (2026). Microscopic model of the operation of the single-chalcogenide X-point memory. Communications Materials. 7(1).
2.
Ambrogio, Stefano, Nicola Ciocchini, Mario Laudato, et al.. (2016). Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses. Frontiers in Neuroscience. 10. 56–56. 185 indexed citations
3.
Bez, Roberto, P. Cappelletti, G. Servalli, & Agostino Pirovano. (2013). Phase Change Memories have taken the field. 13–16. 12 indexed citations
4.
Boniardi, Mattia, Andrea Redaelli, I. Tortorelli, F. Pellizzer, & Agostino Pirovano. (2012). Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation. IEEE Electron Device Letters. 33(4). 594–596. 20 indexed citations
5.
Boniardi, Mattia, Andrea Redaelli, I. Tortorelli, et al.. (2012). Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory. 1–3. 10 indexed citations
6.
Redaelli, Andrea & Agostino Pirovano. (2011). Nano-scaled chalcogenide-based memories. Nanotechnology. 22(25). 254021–254021. 11 indexed citations
7.
Boniardi, Mattia, et al.. (2010). Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays. IEEE Transactions on Electron Devices. 57(10). 2690–2696. 78 indexed citations
8.
Mantegazza, D., Daniele Ielmini, Agostino Pirovano, & Andrea L. Lacaita. (2010). Incomplete Filament Crystallization During Set Operation in PCM Cells. IEEE Electron Device Letters. 31(4). 341–343. 12 indexed citations
9.
Boniardi, Mattia, Daniele Ielmini, I. Tortorelli, et al.. (2010). Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories. Solid-State Electronics. 58(1). 11–16. 23 indexed citations
10.
Pirovano, Agostino & K. Schuegraf. (2010). Memory grows up. Nature Nanotechnology. 5(3). 177–178. 29 indexed citations
11.
Boniardi, Mattia, Daniele Ielmini, Simone Lavizzari, et al.. (2009). Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices. 122–127. 23 indexed citations
12.
Bez, Roberto, E. Camerlenghi, & Agostino Pirovano. (2008). Materials and Processes for Non-Volatile Memories. Materials science forum. 608. 111–132. 6 indexed citations
13.
Irrera, Fernanda, et al.. (2008). On the RESET-SET transition in Phase Change Memories. IRIS UNIMORE (University of Modena and Reggio Emilia). 158–161. 3 indexed citations
14.
Abrutis, A., Valentina Plaušinaitienė, Martynas Skapas, et al.. (2008). Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications. Chemistry of Materials. 20(11). 3557–3559. 35 indexed citations
15.
Mantegazza, D., Daniele Ielmini, Agostino Pirovano, & Andrea L. Lacaita. (2007). Anomalous Cells With Low Reset Resistance in Phase-Change-Memory Arrays. IEEE Electron Device Letters. 28(10). 865–867. 16 indexed citations
16.
Bez, Roberto & Agostino Pirovano. (2004). Non-volatile memory technologies: emerging concepts and new materials. Materials Science in Semiconductor Processing. 7(4-6). 349–355. 208 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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