R.H. Womack

912 total citations
18 papers, 717 citations indexed

About

R.H. Womack is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, R.H. Womack has authored 18 papers receiving a total of 717 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 1 paper in Biomedical Engineering. Recurrent topics in R.H. Womack's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). R.H. Womack is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). R.H. Womack collaborates with scholars based in United States. R.H. Womack's co-authors include J. T. Evans, M. Elahy, A.H. Shah, H. Shichijo, W.F. Richardson, G. Pollack, S.D.S. Malhi, P.K. Chatterjee, S. Banerjee and Hon Wai Lam and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

R.H. Womack

18 papers receiving 668 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.H. Womack United States	11	571	369	164	69	40	18	717
Bob Johnson United States	4	261 0.5×	282 0.8×	44 0.3×	66 1.0×	17 0.4×	5	344
Ming-ta Hsieh United States	9	475 0.8×	174 0.5×	87 0.5×	40 0.6×	104 2.6×	23	529
R. Cuppens Netherlands	8	178 0.3×	312 0.8×	188 1.1×	95 1.4×	46 1.1×	15	384
K. Hieda Japan	15	620 1.1×	60 0.2×	142 0.9×	28 0.4×	84 2.1×	60	681
L. Mathew United States	17	778 1.4×	319 0.9×	225 1.4×	27 0.4×	50 1.3×	47	942
Lars‐Åke Ragnarsson Belgium	20	1.3k 2.3×	217 0.6×	71 0.4×	66 1.0×	134 3.4×	97	1.4k
K. Schuegraf United States	8	280 0.5×	88 0.2×	52 0.3×	34 0.5×	33 0.8×	20	335
J.-L. Ogier France	7	720 1.3×	171 0.5×	24 0.1×	86 1.2×	54 1.4×	29	749
Y. Nissan‐Cohen United States	14	899 1.6×	294 0.8×	29 0.2×	50 0.7×	72 1.8×	21	913
B. Guillaumot France	17	1.1k 1.9×	220 0.6×	131 0.8×	48 0.7×	114 2.9×	65	1.1k

Countries citing papers authored by R.H. Womack

Since Specialization

Citations

This map shows the geographic impact of R.H. Womack's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.H. Womack with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.H. Womack more than expected).

Fields of papers citing papers by R.H. Womack

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.H. Womack. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.H. Womack. The network helps show where R.H. Womack may publish in the future.

Co-authorship network of co-authors of R.H. Womack

This figure shows the co-authorship network connecting the top 25 collaborators of R.H. Womack. A scholar is included among the top collaborators of R.H. Womack based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.H. Womack. R.H. Womack is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

Evans, J. T., et al.. (2003). Ferroelectric non-volatile memory. 65–72. 1 indexed citations

Womack, R.H., et al.. (2003). A 16 kb ferroelectric nonvolatile memory with a bit parallel architecture. 242–243,. 10 indexed citations

Evans, J. T. & R.H. Womack. (1988). An experimental 512-bit nonvolatile memory with ferroelectric storage cell. IEEE Journal of Solid-State Circuits. 23(5). 1171–1175. 307 indexed citations

Shepherd, W.H., et al.. (1987). A non-volatile memory cell based on ferroelectric storage capacitors. 850–851. 17 indexed citations

Banerjee, S., Akitoshi Nishimura Akitoshi Nishimura, A.H. Shah, et al.. (1986). Characterization of Trench Transistors for 3-D Memories. Symposium on VLSI Technology. 79–80. 6 indexed citations

Shah, A.H., R.H. Womack, H. Shichijo, et al.. (1986). A 4Mb DRAM with cross point trench transistor cell. 268–269. 22 indexed citations

Shah, A.H., R.H. Womack, H. Shichijo, et al.. (1986). A 4-Mbit DRAM with trench-transistor cell. IEEE Journal of Solid-State Circuits. 21(5). 618–626. 27 indexed citations

Rao, K. V., M. Elahy, Sanjay K. Banerjee, et al.. (1986). Trench capacitor design issues in VLSI DRAM cells. 140–143. 10 indexed citations

Shichijo, H., Sanjay K. Banerjee, S.D.S. Malhi, et al.. (1986). Trench transistor DRAM cell. IEEE Electron Device Letters. 7(2). 119–121. 5 indexed citations

10.

Malhi, S.D.S., H. Shichijo, S. Banerjee, et al.. (1985). Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon. IEEE Journal of Solid-State Circuits. 20(1). 178–201. 19 indexed citations

11.

Malhi, S.D.S., H. Shichijo, S. Banerjee, et al.. (1985). Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon. IEEE Transactions on Electron Devices. 32(2). 258–281. 163 indexed citations

12.

Richardson, W.F., G. Pollack, A.H. Shah, et al.. (1985). A trench transistor cross-point DRAM cell. 714–717. 32 indexed citations

13.

Elahy, M., H. Shichijo, P.K. Chatterjee, et al.. (1984). Trench capacitor leakage in Mbit DRAMs. 248–251. 13 indexed citations

14.

Shichijo, H., S.D.S. Malhi, W.F. Richardson, et al.. (1984). Polysilicon transistors in VLSI MOS memories. 228–231. 3 indexed citations

15.

Shichijo, H., S.D.S. Malhi, A.H. Shah, et al.. (1984). TITE RAM: A New SOI DRAM Gain Cell for Mbit DRAM's. 12 indexed citations

16.

Elahy, M., H. Shichijo, P.K. Chatterjee, et al.. (1984). Trench capacitor leakage in high-density DRAM's. IEEE Electron Device Letters. 5(12). 527–530. 1 indexed citations

17.

Pollack, G., W.F. Richardson, S.D.S. Malhi, et al.. (1984). Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source. IEEE Electron Device Letters. 5(11). 468–470. 66 indexed citations

18.

Banerjee, S., M. Elahy, H. Shichijo, et al.. (1984). VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications. IEEE Transactions on Electron Devices. 31(12). 1983–1983. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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