N. Puetz

911 total citations
40 papers, 715 citations indexed

About

N. Puetz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Puetz has authored 40 papers receiving a total of 715 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in N. Puetz's work include Semiconductor Quantum Structures and Devices (23 papers), Semiconductor Lasers and Optical Devices (20 papers) and Photonic and Optical Devices (19 papers). N. Puetz is often cited by papers focused on Semiconductor Quantum Structures and Devices (23 papers), Semiconductor Lasers and Optical Devices (20 papers) and Photonic and Optical Devices (19 papers). N. Puetz collaborates with scholars based in Canada and Germany. N. Puetz's co-authors include C. J. Miner, T. Makino, F. R. Shepherd, R. W. Moore, I. C. Bassignana, C. Rolland, Wai Yie Leong, A. J. SpringThorpe, K. Fox and D.G. Knight and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Puetz

36 papers receiving 673 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Puetz Canada 16 618 484 76 71 42 40 715
Jukka Viheriälä Finland 16 549 0.9× 314 0.6× 59 0.8× 198 2.8× 28 0.7× 93 659
S. C. Shen China 12 291 0.5× 187 0.4× 108 1.4× 57 0.8× 9 0.2× 37 370
T. Kikawa Japan 12 364 0.6× 276 0.6× 106 1.4× 40 0.6× 5 0.1× 28 438
M.K. Emsley United States 8 339 0.5× 183 0.4× 85 1.1× 116 1.6× 53 1.3× 21 392
Yasha Yi United States 16 357 0.6× 321 0.7× 163 2.1× 206 2.9× 12 0.3× 48 622
Naresh C. Das United States 10 309 0.5× 130 0.3× 76 1.0× 99 1.4× 10 0.2× 61 388
J.S. Osinski United States 17 644 1.0× 509 1.1× 72 0.9× 40 0.6× 5 0.1× 53 726
Ryan M. Gelfand United States 13 339 0.5× 267 0.6× 129 1.7× 316 4.5× 14 0.3× 28 606
T. Nguyen Australia 12 229 0.4× 109 0.2× 113 1.5× 73 1.0× 16 0.4× 33 386
D. Eich Germany 14 643 1.0× 227 0.5× 368 4.8× 54 0.8× 31 0.7× 61 733

Countries citing papers authored by N. Puetz

Since Specialization
Citations

This map shows the geographic impact of N. Puetz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Puetz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Puetz more than expected).

Fields of papers citing papers by N. Puetz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Puetz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Puetz. The network helps show where N. Puetz may publish in the future.

Co-authorship network of co-authors of N. Puetz

This figure shows the co-authorship network connecting the top 25 collaborators of N. Puetz. A scholar is included among the top collaborators of N. Puetz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Puetz. N. Puetz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wheeldon, Jeffrey F., Christopher E. Valdivia, Denis Masson, et al.. (2010). High-efficiency commercial grade 1cm2AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7750. 77502Q–77502Q. 9 indexed citations
2.
Wheeldon, Jeffrey F., Christopher E. Valdivia, Alexandre W. Walker, et al.. (2010). Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells. Progress in Photovoltaics Research and Applications. 19(4). 442–452. 61 indexed citations
4.
Hong, Jin, et al.. (1999). Compact asymmetric strongly gain-coupled DFB laser array with integrated BFM array for simultaneous 4-λ 2.5 Gb/s 100 km WDM transmission. Journal of Lightwave Technology. 17(8). 1436–1442. 10 indexed citations
5.
Hong, Jin, et al.. (1998). Compact strongly gain-coupled DFB laser array with integrated BFMA arrays for simultaneous 4-λ 2.5 Gb/s 100-km WDM transmission. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3491. 645–645.
6.
Adams, David M., C. Rolland, David Melville, et al.. (1997). <title>Gain-coupled DFB integrated with a Mach-Zehnder modulator for 10 Gb/s transmission at 1.55 um over NDSF</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3038. 45–54. 3 indexed citations
7.
Cao, Ning, et al.. (1997). Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure. Applied Physics Letters. 70(25). 3419–3421. 13 indexed citations
8.
DeCorby, R. G., et al.. (1997). Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors. IEEE Photonics Technology Letters. 9(7). 985–987. 7 indexed citations
9.
Adams, David M., et al.. (1996). Mach–Zehnder modulator integrated with a gain-coupledDFB laser for 10 Gbit/s, 100 km NDSF transmission at 1.55 µm. Electronics Letters. 32(5). 485–486. 23 indexed citations
10.
Charlebois, Serge A., J. Beerens, C. J. Miner, & N. Puetz. (1996). Spin resonance inIn0.53Ga0.47As under hydrostatic pressure. Physical review. B, Condensed matter. 54(19). 13456–13459. 2 indexed citations
11.
Beerens, J., C. J. Miner, & N. Puetz. (1995). Electron spin resonance in In0.53Ga0.47As. Semiconductor Science and Technology. 10(9). 1233–1236. 5 indexed citations
12.
Leong, Wai Yie, et al.. (1995). Singlemode operation over range –40 –85°C in1.55 µm gain-coupled DFB lasers. Electronics Letters. 31(19). 1670–1671. 2 indexed citations
13.
Makino, T., et al.. (1993). Partly gain-coupled 1.55 mu m strained-layer multiquantum-well DFB lasers. IEEE Journal of Quantum Electronics. 29(6). 1736–1742. 79 indexed citations
14.
Wu, Chi‐Man Lawrence, et al.. (1993). InGaAsP/InP vertical directional coupler filter with optimally designed wavelength tunability. IEEE Photonics Technology Letters. 5(4). 457–459. 31 indexed citations
15.
Makino, T., et al.. (1992). 1.55 μm index/gain coupled DFB lasers with strained layer multiquantum-well active graing. Electronics Letters. 28(18). 1726–1727. 39 indexed citations
16.
Beerens, J., et al.. (1991). Magneto-optical study of Ga0.47In0.53As–InP under hydrostatic pressure. Canadian Journal of Physics. 69(3-4). 441–446. 5 indexed citations
17.
Lau, W. M., et al.. (1990). Capping and decapping of InP and InGaAs surfaces. Journal of Applied Physics. 67(2). 768–773. 17 indexed citations
18.
Tarof, L.E., et al.. (1990). Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery. Applied Physics Letters. 57(7). 670–672. 54 indexed citations
19.
Puetz, N., G. Hillier, & A. J. SpringThorpe. (1988). The inverted horizontal reactor: Growth of uniform InP and GaInAs by LPMOCVD. Journal of Electronic Materials. 17(5). 381–386. 25 indexed citations
20.
Houston, P.A., C. Blaauw, M. Svilans, et al.. (1987). Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition. Electronics Letters. 23(18). 931–932. 20 indexed citations

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