P.P. Ruden

1.2k total citations
61 papers, 865 citations indexed

About

P.P. Ruden is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P.P. Ruden has authored 61 papers receiving a total of 865 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 47 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in P.P. Ruden's work include Semiconductor Quantum Structures and Devices (45 papers), Semiconductor materials and devices (24 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). P.P. Ruden is often cited by papers focused on Semiconductor Quantum Structures and Devices (45 papers), Semiconductor materials and devices (24 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). P.P. Ruden collaborates with scholars based in United States, Germany and Belgium. P.P. Ruden's co-authors include G. H. Döhler, K. Ploog, H. Künzel, M. S. Shur, D.E. Grider, H. Stolz, G. Abstreiter, D. J. Olego, D.K. Arch and R. R. Daniels and has published in prestigious journals such as Physical Review Letters, Nature Communications and Physical review. B, Condensed matter.

In The Last Decade

P.P. Ruden

55 papers receiving 829 citations

Peers

P.P. Ruden

AMPO

EEE

MC

CMP

BE

M. Hagerott United States

K. Boujdaria Tunisia

Yuzo Shinozuka Japan

R. F. Austin United States

K. Oto Japan

M. Zachau United States

H. Noge Japan

H. Jung Germany

A. Reznitsky Russia

Bhavtosh Bansal India

M. Hagerott United States

P.P. Ruden

765 ×1.1

AMPO

695 ×1.1

EEE

419 ×1.7

MC

133 ×1.5

CMP

32 ×0.8

BE

Citations per year, relative to P.P. Ruden P.P. Ruden (= 1×) peers M. Hagerott

Countries citing papers authored by P.P. Ruden

Since Specialization

Citations

This map shows the geographic impact of P.P. Ruden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.P. Ruden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.P. Ruden more than expected).

Fields of papers citing papers by P.P. Ruden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.P. Ruden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.P. Ruden. The network helps show where P.P. Ruden may publish in the future.

Co-authorship network of co-authors of P.P. Ruden

This figure shows the co-authorship network connecting the top 25 collaborators of P.P. Ruden. A scholar is included among the top collaborators of P.P. Ruden based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.P. Ruden. P.P. Ruden is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

He, Tao, Yanfei Wu, Gabriele D’Avino, et al.. (2018). Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors. Nature Communications. 9(1). 2141–2141. 62 indexed citations

2.

Ruden, P.P., et al.. (2003). Velocity saturation effect in heterostructure field effect transistors. 121–124.

3.

Ruden, P.P., et al.. (2003). High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs. 34. 117–120.

4.

Ruden, P.P., et al.. (2003). Short channel effects in submicron self-aligned gate heterostructure field effect transistors. 696–699. 1 indexed citations

5.

Ruden, P.P.. (1999). Materials-theory-based device modeling for III-nitride devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3629. 174–174. 2 indexed citations

6.

Zhang, Yumin & P.P. Ruden. (1999). 1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells. IEEE Journal of Quantum Electronics. 35(10). 1509–1514. 4 indexed citations

7.

Yang, Ronggui & P.P. Ruden. (1995). Electron–electron interaction in three-dimensional model quantum box. Journal of Applied Physics. 78(3). 1798–1803. 2 indexed citations

8.

Liu, Jianjun & P.P. Ruden. (1992). Self-consistent subband calculations of hetero n-i-p-i superlattices and the effect of valence subband mixing. Superlattices and Microstructures. 11(4). 415–421. 2 indexed citations

9.

Ruden, P.P., et al.. (1991). Exchange effect in coupled two-dimensional electron gas systems. Applied Physics Letters. 59(17). 2165–2167. 40 indexed citations

10.

Ruden, P.P., et al.. (1990). Electron velocity saturation in heterostructure field-effect transistors. IEEE Transactions on Electron Devices. 37(3). 530–535. 8 indexed citations

11.

Ruden, P.P., et al.. (1990). AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors. IEEE Transactions on Electron Devices. 37(10). 2171–2175. 31 indexed citations

12.

Ruden, P.P., et al.. (1989). Spectrally agile far-infrared detector using an n-i-p-i superlattice. Journal of Applied Physics. 66(2). 956–960. 3 indexed citations

13.

Ruden, P.P., et al.. (1988). Gate current of modulation-doped field-effect transistors. Journal of Applied Physics. 64(3). 1541–1546. 12 indexed citations

14.

Ruden, P.P., et al.. (1987). Current versus voltage measurements on GaAs doping superlattices. Journal of Applied Physics. 62(6). 2401–2403. 1 indexed citations

15.

Bruno, John D. & P.P. Ruden. (1987). Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 792. 50–50. 1 indexed citations

16.

Döhler, G. H. & P.P. Ruden. (1984). Properties of n-i-p-i doping sljperlattices in III–V and IV–VI semiconductors. Surface Science. 142(1-3). 474–485. 18 indexed citations

17.

Döhler, G. H. & P.P. Ruden. (1984). Theory of absorption in doping superlattices. Physical review. B, Condensed matter. 30(10). 5932–5944. 29 indexed citations

18.

Rehm, Warren S., H. Künzel, G. H. Döhler, K. Ploog, & P.P. Ruden. (1983). Time resolved luminescence in n-i-p-i doping superlattices. Physica B+C. 117-118. 732–734. 7 indexed citations

19.

Jung, H., G. H. Döhler, H. Künzel, et al.. (1982). Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices. Solid State Communications. 43(4). 291–294. 31 indexed citations

20.

Abstreiter, G., G. H. Döhler, H. Künzel, et al.. (1982). Quantization of photoexcited electrons in GaAs nipi crystals. Surface Science. 113(1-3). 479–480. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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