Pavel Rodin

870 total citations
57 papers, 691 citations indexed

About

Pavel Rodin is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Pavel Rodin has authored 57 papers receiving a total of 691 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 20 papers in Control and Systems Engineering and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Pavel Rodin's work include Electrostatic Discharge in Electronics (25 papers), Pulsed Power Technology Applications (20 papers) and Semiconductor materials and devices (15 papers). Pavel Rodin is often cited by papers focused on Electrostatic Discharge in Electronics (25 papers), Pulsed Power Technology Applications (20 papers) and Semiconductor materials and devices (15 papers). Pavel Rodin collaborates with scholars based in Russia, Germany and Austria. Pavel Rodin's co-authors include I. V. Grekhov, Eckehard Schöll, S. V. Korotkov, M. Meixner, Sanjay K. Bose, М. С. Иванов, D. Pogány, E. Gornik, M. Stecher and Ute Ebert and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Physical Review B.

In The Last Decade

Pavel Rodin

53 papers receiving 644 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Pavel Rodin Russia 17 459 239 200 171 139 57 691
A. V. Starodubov Russia 11 368 0.8× 81 0.3× 385 1.9× 56 0.3× 65 0.5× 109 511
Peyman Ahmadi United States 13 303 0.7× 81 0.3× 641 3.2× 29 0.2× 79 0.6× 36 957
Nikita M. Ryskin Russia 18 1.0k 2.3× 345 1.4× 1.2k 6.0× 152 0.9× 124 0.9× 225 1.4k
B. Bruhn Germany 14 171 0.4× 15 0.1× 157 0.8× 121 0.7× 142 1.0× 51 527
M. Kamegawa United States 14 503 1.1× 29 0.1× 328 1.6× 23 0.1× 100 0.7× 21 696
M. Harrison United States 14 308 0.7× 17 0.1× 99 0.5× 33 0.2× 19 0.1× 79 573
M.S. Heutmaker United States 11 226 0.5× 10 0.0× 90 0.5× 128 0.7× 69 0.5× 21 428
Martin Götz Germany 12 562 1.2× 28 0.1× 315 1.6× 88 0.5× 8 0.1× 48 778
M. de Magistris Italy 11 199 0.4× 26 0.1× 50 0.3× 76 0.4× 52 0.4× 62 413
R. Yu United States 14 658 1.4× 28 0.1× 374 1.9× 28 0.2× 96 0.7× 44 804

Countries citing papers authored by Pavel Rodin

Since Specialization
Citations

This map shows the geographic impact of Pavel Rodin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pavel Rodin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pavel Rodin more than expected).

Fields of papers citing papers by Pavel Rodin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pavel Rodin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pavel Rodin. The network helps show where Pavel Rodin may publish in the future.

Co-authorship network of co-authors of Pavel Rodin

This figure shows the co-authorship network connecting the top 25 collaborators of Pavel Rodin. A scholar is included among the top collaborators of Pavel Rodin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pavel Rodin. Pavel Rodin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ivanov, Mikhail, et al.. (2023). Subnanosecond switching of GaAs diode due to impact ionization in collapsing bipolar Gunn domains. Solid State Communications. 379. 115420–115420.
2.
Иванов, М. С., A. V. Rozhkov, & Pavel Rodin. (2022). Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes. Письма в журнал технической физики. 48(10). 67–67. 1 indexed citations
3.
Иванов, М. С., et al.. (2020). Double Avalanche Injection in Diode Avalanche Sharpeners. Semiconductors. 54(3). 345–349. 2 indexed citations
4.
Rodin, Pavel, et al.. (2018). Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses. IEEE Transactions on Plasma Science. 47(1). 994–999. 5 indexed citations
5.
Rodin, Pavel, et al.. (2017). Subnanosecond impact-ionization switching of silicon structures without p–n junctions. Technical Physics Letters. 43(6). 527–530. 3 indexed citations
6.
Иванов, М. С., et al.. (2017). Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections. Journal of Physics Conference Series. 816. 12033–12033. 8 indexed citations
7.
Иванов, М. С., Pavel Rodin, P. A. Ivanov, & I. V. Grekhov. (2016). Parameters of silicon carbide diode avalanche shapers for the picosecond range. Technical Physics Letters. 42(1). 43–46. 5 indexed citations
8.
Rozhkov, A. V., et al.. (2016). Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures. IEEE Transactions on Plasma Science. 44(10). 1941–1946. 17 indexed citations
9.
Rozhkov, A. V., et al.. (2015). Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching. Technical Physics Letters. 41(4). 307–309. 14 indexed citations
10.
11.
Rodin, Pavel, et al.. (2012). Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes. Technical Physics Letters. 38(6). 535–539. 17 indexed citations
12.
Denison, M., M. Blaho, Pavel Rodin, et al.. (2004). Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress. IEEE Transactions on Electron Devices. 51(8). 1331–1339. 38 indexed citations
13.
Denison, M., M. Blaho, Pavel Rodin, et al.. (2004). Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress. IEEE Transactions on Electron Devices. 51(10). 1695–1703. 27 indexed citations
14.
Rodin, Pavel, Ute Ebert, Willem Hundsdorfer, & I. V. Grekhov. (2003). A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts. 5. 445–448. 1 indexed citations
15.
Plenge, F., Pavel Rodin, Eckehard Schöll, & Katharina Krischer. (2001). Breathing current domains in globally coupled electrochemical systems: A comparison with a semiconductor model. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics. 64(5). 56229–56229. 32 indexed citations
16.
Bose, Sanjay K., Pavel Rodin, & Eckehard Schöll. (2000). Competing spatial and temporal instabilities in a globally coupled bistable semiconductor system near a codimension-two bifurcation. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics. 62(2). 1778–1789. 25 indexed citations
17.
Meixner, M., Pavel Rodin, Eckehard Schöll, & A. Wacker. (2000). Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics. The European Physical Journal B. 13(1). 157–168. 40 indexed citations
18.
Meixner, M., et al.. (1999). Dynamics and Stability of Lateral Current Density Patterns in Resonant-Tunneling Structures. Defense Technical Information Center (DTIC). 1 indexed citations
19.
Meixner, M., Pavel Rodin, & Eckehard Schöll. (1997). Global Control of Front Propagation in Gate-Driven Multilayered Structures. physica status solidi (b). 204(1). 493–496. 6 indexed citations
20.
Rodin, Pavel, et al.. (1995). Analytic model for the propagation of an impact-ionization front in a large-area diode structure. Semiconductors. 29(8). 785–790. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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