Oleg M. Orlov

721 total citations
37 papers, 587 citations indexed

About

Oleg M. Orlov is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Oleg M. Orlov has authored 37 papers receiving a total of 587 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 4 papers in Cellular and Molecular Neuroscience. Recurrent topics in Oleg M. Orlov's work include Semiconductor materials and devices (27 papers), Ferroelectric and Negative Capacitance Devices (20 papers) and Advanced Memory and Neural Computing (17 papers). Oleg M. Orlov is often cited by papers focused on Semiconductor materials and devices (27 papers), Ferroelectric and Negative Capacitance Devices (20 papers) and Advanced Memory and Neural Computing (17 papers). Oleg M. Orlov collaborates with scholars based in Russia, Egypt and Taiwan. Oleg M. Orlov's co-authors include V. A. Gritsenko, Andrey M. Markeev, Timofey V. Perevalov, Damir R. Islamov, Аnna G. Chernikova, Yu. Yu. Lebedinskiǐ, Konstantin Egorov, Maxim G. Kozodaev, Andrei A. Gismatulin and D. V. Negrov and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Acta Materialia.

In The Last Decade

Oleg M. Orlov

36 papers receiving 551 citations

Peers

Oleg M. Orlov

EEE

CMN

AMPO

Enric Grustan‐Gutierrez China

Sungho Heo South Korea

Natacha Ohannessian Switzerland

I. Kasko Germany

Boon Teik Chan Belgium

Hubert Hody Belgium

K. A. Nasyrov Russia

K.‐D. Ufert Germany

Yu. N. Novikov Russia

T. Witters Belgium

Enric Grustan‐Gutierrez China

Oleg M. Orlov

324 ×0.6

EEE

241 ×0.7

60 ×0.8

CMN

21 ×0.6

37 ×1.1

AMPO

Citations per year, relative to Oleg M. Orlov Oleg M. Orlov (= 1×) peers Enric Grustan‐Gutierrez

Countries citing papers authored by Oleg M. Orlov

Since Specialization

Citations

This map shows the geographic impact of Oleg M. Orlov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Oleg M. Orlov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Oleg M. Orlov more than expected).

Fields of papers citing papers by Oleg M. Orlov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Oleg M. Orlov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Oleg M. Orlov. The network helps show where Oleg M. Orlov may publish in the future.

Co-authorship network of co-authors of Oleg M. Orlov

This figure shows the co-authorship network connecting the top 25 collaborators of Oleg M. Orlov. A scholar is included among the top collaborators of Oleg M. Orlov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Oleg M. Orlov. Oleg M. Orlov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gismatulin, Andrei A., Г. Н. Камаев, В. Н. Кручинин, et al.. (2021). Charge transport mechanism in the forming-free memristor based on silicon nitride. Scientific Reports. 11(1). 2417–2417. 32 indexed citations

Gritsenko, V. A., Andrei A. Gismatulin, & Oleg M. Orlov. (2021). Memory Properties of SiOx- and SiNx-Based Memristors. Nanobiotechnology Reports. 16(6). 722–731. 4 indexed citations

Islamov, Damir R., et al.. (2020). Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. Applied Physics Letters. 117(16). 42 indexed citations

Orlov, Oleg M., et al.. (2020). Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride. Russian Microelectronics. 49(5). 372–377. 4 indexed citations

Orlov, Oleg M., et al.. (2019). Features of the Improving of the HFO2 ReRAM Cells Characteristics Reproducibility. 2087–2089. 3 indexed citations

Orlov, Oleg M., et al.. (2017). FRAM test memory cells radiation hardness research. 255–257. 1 indexed citations

Islamov, Damir R., Аnna G. Chernikova, Maxim G. Kozodaev, et al.. (2017). Leakage Currents Mechanism in Thin Films of Ferroelectric Hf_0.5Zr_0.5O₂. ECS Transactions. 75(32). 123–129. 12 indexed citations

Islamov, Damir R., Аnna G. Chernikova, Maxim G. Kozodaev, et al.. (2017). Leakage currents mechanism in thin films of ferroelectric Hf_0.5Zr_0.5O₂. Journal of Physics Conference Series. 864. 12002–12002. 6 indexed citations

Islamov, Damir R., В. Н. Кручинин, В. Ш. Алиев, et al.. (2016). Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides. Advances in science and technology. 99. 69–74. 7 indexed citations

10.

Islamov, Damir R., et al.. (2016). Charge Transport Mechanism of Stress Induced Leakage Current in Thermal Silicon Oxide. ECS Transactions. 75(5). 57–62. 3 indexed citations

11.

Negrov, D. V., et al.. (2016). Integration of functional elements of resistive nonvolative memory with 1T-1R topology. Russian Microelectronics. 45(6). 383–395. 2 indexed citations

12.

Orlov, Oleg M., et al.. (2015). Analysis of characteristics for periodically doped channel field-effect transistors under extreme thermal conditions. Russian Microelectronics. 44(4). 231–235. 1 indexed citations

13.

Islamov, Damir R., Аnna G. Chernikova, Maxim G. Kozodaev, et al.. (2015). Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2. Journal of Experimental and Theoretical Physics Letters. 102(8). 544–547. 25 indexed citations

14.

Orlov, Oleg M., V. A. Gritsenko, В. Н. Кручинин, et al.. (2015). Nanoscale Potential Fluctuation in Non-Stoichiometric Hafnium Suboxides. ECS Transactions. 69(5). 237–241. 4 indexed citations

15.

Orlov, Oleg M., et al.. (2014). Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures. Russian Microelectronics. 43(5). 328–332. 2 indexed citations

16.

Orlov, Oleg M., A. S. Baturin, Konstantin Egorov, et al.. (2014). Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films. Russian Microelectronics. 43(4). 239–245. 6 indexed citations

17.

Legotin, S., et al.. (2010). A silicon position-sensitive detector of charged particles and radiations on the basis of functionally integrated structures with nano-micron active regions. Instruments and Experimental Techniques. 53(5). 657–662. 1 indexed citations

18.

Orlov, Oleg M., et al.. (2008). Distinctive features and problems of CMOS technology for decrease in the node size to 0.18 μm or less. Nanotechnologies in Russia. 3(7-8). 502–506. 9 indexed citations

19.

Orlov, Oleg M., et al.. (2004). SIMS analysis of ultrathin implanted arsenic layers in silicon. Technical Physics Letters. 30(11). 897–899. 3 indexed citations

20.

Orlov, Oleg M., et al.. (2003). Technology for nanoperiodic doping of a metal oxide semiconductor field-effect transistor channel using a self-forming wave-ordered structure. Nanotechnology. 14(7). 709–715. 39 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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