M. Sousa

1.0k citations

39 papers · 858 indexed · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Photonic and Optical Devices
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials

Papers in ⓘ

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 33
- Advancements in Semiconductor Devices and Circuit Design 19
- Ferroelectric and Negative Capacitance Devices 9
- Thin-Film Transistor Technologies 6
- Integrated Circuits and Semiconductor Failure Analysis 5
Materials Chemistry 12
- Electronic and Structural Properties of Oxides 8

Co-authors: J. Fompeyrine (28 shared papers)Daniele Caimi (25 shared papers)Chiara Marchiori (18 shared papers)Jean‐Pierre Locquet (9 shared papers)Lukas Czornomaz (16 shared papers)H. Siegwart (13 shared papers)C. Rossel (13 shared papers)D. J. Webb (12 shared papers)
Journals: Microelectronic Engineering (4 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (3 papers)Solid-State Electronics (2 papers)ISPRS International Journal of Geo-Information (1 paper)
Partner nations: Switzerland United States Greece

In The Last Decade

M. Sousa

38 papers receiving 830 citations

Peers

Countries citing papers authored by M. Sousa

Since Specialization

Citations

This map shows the geographic impact of M. Sousa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Sousa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Sousa more than expected).

Fields of papers citing papers by M. Sousa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Sousa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Sousa. The network helps show where M. Sousa may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Sousa, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Sousa Line = papers co-authored together M. Sousa links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Field-effect transistors with SrHfO3 as gate oxide Applied Physics Letters ·C. Rossel, B. Mereu, Chiara Marchiori, Daniele Caimi, M. Sousa, Annie Guiller, H. Siegwart, R. Germann, Jean‐Pierre Locquet, J. Fompeyrine, D. J. Webb, Ch. Dieker, Jin Won Seo	2006	87
2	Optical properties of epitaxial SrHfO3 thin films grown on Si Journal of Applied Physics ·M. Sousa, C. Rossel, Chiara Marchiori, H. Siegwart, Daniele Caimi, Jean‐Pierre Locquet, D. J. Webb, R. Germann, J. Fompeyrine, Katherina Babich, Jin Won Seo, Ch. Dieker	2007	68
3	8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory Zenodo (CERN European Organization for Nuclear Research) ·Iason Giannopoulos, Abu Sebastian, Manuel Le Gallo, Vara Prasad Jonnalagadda, M. Sousa, Marcus N. Boon, Evangelos Eleftheriou	2018	63
4	SrHfO3 as gate dielectric for future CMOS technology Microelectronic Engineering ·C. Rossel, M. Sousa, Chiara Marchiori, J. Fompeyrine, D. J. Webb, Daniele Caimi, B. Mereu, Adriana Ispas, Jean‐Pierre Locquet, H. Siegwart, R. Germann, A. Tapponnier, Katherina Babich	2007	63
5	Towards large size substrates for III-V co-integration made by direct wafer bonding on Si APL Materials ·N. Daix, Emanuele Uccelli, Lukas Czornomaz, Daniele Caimi, C. Rossel, M. Sousa, H. Siegwart, Chiara Marchiori, Jean‐Michel Hartmann, Kuen‐Ting Shiu, Chiyu Cheng, M. Krishnan, Maria José Lo Faro, Masaharu Kobayashi, D. K. Sadana, J. Fompeyrine	2014	58
6	Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)) ·Lukas Czornomaz, Emanuele Uccelli, M. Sousa, Veeresh Deshpande, Vladimir Djara, Daniele Caimi, Marta D. Rossell, Rolf Erni, J. Fompeyrine	2015	53
7	Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers Applied Physics Letters ·Steven J. Koester, E. Kiewra, Yanning Sun, D. Neumayer, J. A. Ott, M. Copel, D. K. Sadana, D. J. Webb, J. Fompeyrine, Jean‐Pierre Locquet, Chiara Marchiori, M. Sousa, R. Germann	2006	45
8	Controlling tetragonality and crystalline orientation in BaTiO₃nano-layers grown on Si Nanotechnology ·Stefan Abel, M. Sousa, C. Rossel, Daniele Caimi, Marta D. Rossell, Rolf Erni, J. Fompeyrine, Chiara Marchiori	2013	44
9	Thermal stability of the SrTiO3∕(Ba,Sr)O stacks epitaxially grown on Si Applied Physics Letters ·Chiara Marchiori, M. Sousa, Annie Guiller, H. Siegwart, Jean‐Pierre Locquet, J. Fompeyrine, G. J. Norga, Jin Won Seo	2006	43
10	Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy Journal of Applied Physics ·Z. M. Rittersma, Jacob C. Hooker, G. Vellianitis, Jean‐Pierre Locquet, Chiara Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram, M. Rosmeulen, Stefan De Gendt, A. Dimoulas	2006	32
11	Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs Veeresh Deshpande, Vladimir Djara, Eileen O’Connor, Pouya Hashemi, Karthik Balakrishnan, M. Sousa, Daniele Caimi, Antonis Olziersky, Lukas Czornomaz, J. Fompeyrine	2015	31
12	Epitaxial germanium-on-insulator grown on (001) Si Microelectronic Engineering ·Jin Won Seo, Ch. Dieker, A. Tapponnier, Ch. Marchiori, M. Sousa, Jean‐Pierre Locquet, J. Fompeyrine, Adriana Ispas, C. Rossel, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas	2007	30
13	Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates Lukas Czornomaz, N. Daix, Kangguo Cheng, Daniele Caimi, C. Rossel, Kevin Lister, M. Sousa, J. Fompeyrine	2013	29
14	An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch Vladimir Djara, Veeresh Deshpande, Emanuele Uccelli, N. Daix, Daniele Caimi, C. Rossel, M. Sousa, H. Siegwart, Chiara Marchiori, Jean‐Michel Hartmann, Kuen‐Ting Shiu, Chung-Wen Weng, Mahadevaiyer Krishnan, Maria José Lo Faro, Rachel Steiner, D. K. Sadana, D. Lubyshev, A. Liu, Lukas Czornomaz, J. Fompeyrine	2015	23
15	High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications Cezar B. Zota, Clarissa Convertino, Yannick Baumgartner, M. Sousa, Daniele Caimi, Lukas Czornomaz	2018	21
16	Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon Lukas Czornomaz, N. Daix, Pranita Kerber, Kevin Lister, Daniele Caimi, C. Rossel, M. Sousa, Emanuele Uccelli, J. Fompeyrine	2013	20
17	InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·Cezar B. Zota, Clarissa Convertino, Veeresh Deshpande, Thomas Merkle, M. Sousa, Daniele Caimi, L. Czomomaz	2018	18
18	First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts Veeresh Deshpande, H. Hahn, Eileen O’Connor, Yannick Baumgartner, M. Sousa, Daniele Caimi, H. Boutry, J. Widiez, L. Brévard, C. Le Royer, M. Vinet, J. Fompeyrine, Lukas Czornomaz	2017	17
19	A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance Institutional Research Information System (University of Udine) ·H. Hahn, Veeresh Deshpande, Enrico Caruso, Saurabh Sant, Eileen O’Connor, Yannick Baumgartner, M. Sousa, Daniele Caimi, Antonis Olziersky, Pierpaolo Palestri, L. Selmi, Andreas Schenk, Lukas Czornomaz	2017	17
20	In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction Microelectronic Engineering ·D. J. Webb, J. Fompeyrine, Shigeru Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, S. F. Alvarado, Jean‐Pierre Locquet, Chiara Marchiori, H. Siegwart, Agnese Callegari, E. Kiewra, Yi-Chen Sun, Joel De Souza, Norbert Hoffmann	2007	14

About M. Sousa

M. Sousa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Forestry, having authored 39 papers that have together received 858 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Electronic and Structural Properties of Oxides (8 papers), Thin-Film Transistor Technologies (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Nanowire Synthesis and Applications (5 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (744 citations), Materials Chemistry (364 citations), Electronic, Optical and Magnetic Materials (107 citations), Atomic and Molecular Physics, and Optics (163 citations) and Biomedical Engineering (140 citations). M. Sousa has collaborated with scholars based in Switzerland, United States and Greece. Frequent co-authors include J. Fompeyrine, Daniele Caimi, Chiara Marchiori, Jean‐Pierre Locquet, Lukas Czornomaz, H. Siegwart, C. Rossel, D. J. Webb, R. Germann and Jin Won Seo. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics and ISPRS International Journal of Geo-Information.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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