M. Sousa

1.0k total citations
39 papers, 858 citations indexed

About

M. Sousa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Sousa has authored 39 papers receiving a total of 858 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Sousa's work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). M. Sousa is often cited by papers focused on Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). M. Sousa collaborates with scholars based in Switzerland, United States and Greece. M. Sousa's co-authors include J. Fompeyrine, Daniele Caimi, Chiara Marchiori, Jean‐Pierre Locquet, Lukas Czornomaz, H. Siegwart, C. Rossel, D. J. Webb, R. Germann and Jin Won Seo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

M. Sousa

38 papers receiving 830 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Sousa Switzerland 18 744 364 163 140 107 39 858
Kentaro Yumigeta United States 14 348 0.5× 611 1.7× 355 2.2× 63 0.5× 101 0.9× 24 809
Janos Sartor Germany 8 295 0.4× 430 1.2× 198 1.2× 80 0.6× 196 1.8× 16 671
Sei Morikawa Japan 10 181 0.2× 479 1.3× 186 1.1× 96 0.7× 36 0.3× 16 557
C. D’Emic United States 18 1.3k 1.7× 297 0.8× 213 1.3× 198 1.4× 75 0.7× 42 1.4k
Everton Bonturim Brazil 7 262 0.4× 439 1.2× 203 1.2× 61 0.4× 345 3.2× 13 686
T. Chiarella Belgium 19 1.3k 1.7× 147 0.4× 174 1.1× 137 1.0× 25 0.2× 109 1.3k
J. Elliott Ortmann United States 12 633 0.9× 304 0.8× 372 2.3× 109 0.8× 176 1.6× 22 836
Diao Li China 14 570 0.8× 312 0.9× 501 3.1× 128 0.9× 62 0.6× 31 826
Leijun Yin United States 10 437 0.6× 252 0.7× 315 1.9× 372 2.7× 99 0.9× 22 623

Countries citing papers authored by M. Sousa

Since Specialization
Citations

This map shows the geographic impact of M. Sousa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Sousa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Sousa more than expected).

Fields of papers citing papers by M. Sousa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Sousa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Sousa. The network helps show where M. Sousa may publish in the future.

Co-authorship network of co-authors of M. Sousa

This figure shows the co-authorship network connecting the top 25 collaborators of M. Sousa. A scholar is included among the top collaborators of M. Sousa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Sousa. M. Sousa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Neto, João G. de Oliveira, et al.. (2025). CrO3-doped P2O5-KF-Al2O3 glasses for NIR light-emitting devices: Crystalline field evaluation via Tanabe-Sugano diagram and investigation of the nephelauxetic effect. Journal of Molecular Structure. 1331. 141616–141616. 1 indexed citations
2.
3.
Melo, Silas Nogueira de, et al.. (2023). MUDANÇA DE USO E COBERTURA DA TERRA NA REGIÃO DE PLANEJAMENTO DO BAIXO MUNIM (MARANHÃO) ENTRE OS ANOS DE 1985 E 2019. Caderno de Geografia. 33(72). 131–131. 1 indexed citations
4.
Sousa, M., et al.. (2023). Importance of Protected Areas by Brazilian States to Reduce Deforestation in the Amazon. ISPRS International Journal of Geo-Information. 12(5). 190–190. 4 indexed citations
5.
Convertino, Clarissa, Cezar B. Zota, Daniele Caimi, M. Sousa, & Lukas Czornomaz. (2019). InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance. IEEE Journal of the Electron Devices Society. 7. 1170–1174. 9 indexed citations
6.
Sebastian, Abu, et al.. (2018). 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory. Zenodo (CERN European Organization for Nuclear Research). 27.7.1–27.7.4. 63 indexed citations
7.
Convertino, Clarissa, Cezar B. Zota, Daniele Caimi, M. Sousa, & Lukas Czornomaz. (2018). InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance. 162–165. 11 indexed citations
8.
Zota, Cezar B., Clarissa Convertino, Veeresh Deshpande, et al.. (2018). InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 165–166. 18 indexed citations
9.
Deshpande, Veeresh, H. Hahn, Eileen O’Connor, et al.. (2017). First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts. T74–T75. 17 indexed citations
10.
Deshpande, Veeresh, Vladimir Djara, Eileen O’Connor, et al.. (2016). DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration. Solid-State Electronics. 128. 87–91. 6 indexed citations
11.
Czornomaz, Lukas, Emanuele Uccelli, M. Sousa, et al.. (2015). Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates. DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)). T172–T173. 53 indexed citations
12.
Uccelli, Emanuele, Lukas Czornomaz, Daniele Caimi, et al.. (2014). III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS. 25–26. 3 indexed citations
13.
Uccelli, Emanuele, Lukas Czornomaz, Daniele Caimi, et al.. (2014). Towards large size substrates for III-V co-integration made by direct wafer bonding on Si. APL Materials. 2(8). 58 indexed citations
14.
Rossel, C., et al.. (2014). Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding. Solid-State Electronics. 98. 88–92. 5 indexed citations
15.
Abel, Stefan, M. Sousa, C. Rossel, et al.. (2013). Controlling tetragonality and crystalline orientation in BaTiO3nano-layers grown on Si. Nanotechnology. 24(28). 285701–285701. 44 indexed citations
16.
Süess, Martin, D. J. Webb, Chiara Marchiori, et al.. (2011). Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium. Journal of Applied Physics. 110(11). 3 indexed citations
17.
Rossel, C., M. Sousa, D. J. Webb, et al.. (2009). Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices. Microelectronic Engineering. 86(7-9). 1635–1637. 12 indexed citations
18.
Sun, Yanning, E. Kiewra, J. P. de Souza, et al.. (2009). High mobility III–V channel MOSFETs for post-Si CMOS applications. 161–164. 2 indexed citations
19.
Webb, D. J., J. Fompeyrine, Shigeru Nakagawa, et al.. (2007). In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction. Microelectronic Engineering. 84(9-10). 2142–2145. 14 indexed citations
20.
Koester, Steven J., E. Kiewra, Yanning Sun, et al.. (2006). Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers. Applied Physics Letters. 89(4). 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Kentaro Yumigeta Breakdown of academic impact, for papers by Janos Sartor Breakdown of academic impact, for papers by Sei Morikawa Breakdown of academic impact, for papers by C. D’Emic Breakdown of academic impact, for papers by Everton Bonturim Breakdown of academic impact, for papers by T. Chiarella Breakdown of academic impact, for papers by J. Elliott Ortmann Breakdown of academic impact, for papers by Diao Li Breakdown of academic impact, for papers by Leijun Yin
Rankless by CCL
2026