H. Siegwart

2.0k total citations
40 papers, 1.6k citations indexed

About

H. Siegwart is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Siegwart has authored 40 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in H. Siegwart's work include Semiconductor materials and devices (27 papers), Electronic and Structural Properties of Oxides (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). H. Siegwart is often cited by papers focused on Semiconductor materials and devices (27 papers), Electronic and Structural Properties of Oxides (13 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). H. Siegwart collaborates with scholars based in Switzerland, United States and France. H. Siegwart's co-authors include J. Fompeyrine, Jean‐Pierre Locquet, Jin Won Seo, Daniele Caimi, Chiara Marchiori, H. A. Padmore, A. Schöll, M. R. Scheinfein, Eric E. Fullerton and S. Anders and has published in prestigious journals such as Nature, Science and Nature Materials.

In The Last Decade

H. Siegwart

40 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Siegwart Switzerland 19 822 729 714 568 362 40 1.6k
J.-D. Ganière Switzerland 21 496 0.6× 438 0.6× 776 1.1× 291 0.5× 423 1.2× 57 1.3k
M. Hanke Germany 19 513 0.6× 633 0.9× 632 0.9× 257 0.5× 215 0.6× 85 1.2k
M. den Hertog France 24 830 1.0× 832 1.1× 607 0.9× 461 0.8× 544 1.5× 85 1.8k
Steffi Y. Woo Canada 21 382 0.5× 721 1.0× 338 0.5× 496 0.9× 679 1.9× 46 1.4k
Vassilios Kapaklis Sweden 21 327 0.4× 614 0.8× 697 1.0× 477 0.8× 477 1.3× 117 1.5k
B. S. D. Ch. S. Varaprasad Japan 19 325 0.4× 697 1.0× 990 1.4× 1.1k 1.9× 124 0.3× 35 1.6k
Sophie Meuret France 17 257 0.3× 594 0.8× 311 0.4× 186 0.3× 142 0.4× 29 1.0k
S. Cherifi France 24 362 0.4× 724 1.0× 952 1.3× 793 1.4× 338 0.9× 63 1.5k
N. Bergeard France 16 277 0.3× 263 0.4× 540 0.8× 229 0.4× 124 0.3× 25 761
L. Calmels France 20 277 0.3× 692 0.9× 963 1.3× 352 0.6× 283 0.8× 75 1.4k

Countries citing papers authored by H. Siegwart

Since Specialization
Citations

This map shows the geographic impact of H. Siegwart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Siegwart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Siegwart more than expected).

Fields of papers citing papers by H. Siegwart

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Siegwart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Siegwart. The network helps show where H. Siegwart may publish in the future.

Co-authorship network of co-authors of H. Siegwart

This figure shows the co-authorship network connecting the top 25 collaborators of H. Siegwart. A scholar is included among the top collaborators of H. Siegwart based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Siegwart. H. Siegwart is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eltes, Felix, Pascal Stark, Daniele Caimi, et al.. (2022). A ferroelectric multilevel non-volatile photonic phase shifter. Nature Photonics. 16(7). 491–497. 83 indexed citations
2.
Eltes, Felix, Daniele Caimi, H. Siegwart, et al.. (2020). An integrated optical modulator operating at cryogenic temperatures. Nature Materials. 19(11). 1164–1168. 117 indexed citations
3.
Uccelli, Emanuele, Lukas Czornomaz, Daniele Caimi, et al.. (2014). III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS. 25–26. 3 indexed citations
4.
Uccelli, Emanuele, Lukas Czornomaz, Daniele Caimi, et al.. (2014). Towards large size substrates for III-V co-integration made by direct wafer bonding on Si. APL Materials. 2(8). 58 indexed citations
5.
Czornomaz, Lukas, Emanuele Uccelli, Daniele Caimi, et al.. (2014). Co-integrating high mobility channels for future CMOS, from substrate to circuits. 47. 1–2. 1 indexed citations
6.
Kazzi, Mario El, Lukas Czornomaz, D. J. Webb, et al.. (2011). Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit. Applied Physics Letters. 99(5). 11 indexed citations
7.
Süess, Martin, D. J. Webb, Chiara Marchiori, et al.. (2011). Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium. Journal of Applied Physics. 110(11). 3 indexed citations
8.
Rossel, C., M. Sousa, D. J. Webb, et al.. (2009). Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices. Microelectronic Engineering. 86(7-9). 1635–1637. 12 indexed citations
9.
Sousa, Marilyne, Chiara Marchiori, D. J. Webb, et al.. (2009). Impact of La<inf>2</inf>O<inf>3</inf> Thickness on HfO<inf>2</inf>/La<inf>2</inf>O<inf>3</inf>/Ge capacitors and p-channel MOSFETs. 173–176. 2 indexed citations
10.
Webb, D. J., J. Fompeyrine, Shigeru Nakagawa, et al.. (2007). In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction. Microelectronic Engineering. 84(9-10). 2142–2145. 14 indexed citations
11.
Norga, G. J., Chiara Marchiori, C. Rossel, et al.. (2006). Solid phase epitaxy of SrTiO3 on (Ba,Sr)O∕Si(100): The relationship between oxygen stoichiometry and interface stability. Journal of Applied Physics. 99(8). 29 indexed citations
12.
Rossel, C., B. Mereu, Chiara Marchiori, et al.. (2006). Field-effect transistors with SrHfO3 as gate oxide. Applied Physics Letters. 89(5). 87 indexed citations
13.
Norga, G. J., Chiara Marchiori, Annie Guiller, et al.. (2005). Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity. Applied Physics Letters. 87(26). 23 indexed citations
14.
Hoffmann, Axel, Jin Won Seo, M. R. Fitzsimmons, et al.. (2002). Induced magnetic moments at a ferromagnet-antiferromagnet interface. Physical review. B, Condensed matter. 66(22). 49 indexed citations
15.
Seo, Jin Won, J. Fompeyrine, H. Siegwart, & Jean‐Pierre Locquet. (2001). Oxidation mechanism of LaTiO3.5 thin films. Physical Review B. 6320(20). 4 indexed citations
16.
Seo, Jin Won, J. Fompeyrine, H. Siegwart, & Jean‐Pierre Locquet. (2001). Domain structure in LaFeO3 thin films and its role on exchange coupling. MRS Proceedings. 666. 2 indexed citations
17.
Nolting, F., A. Schöll, J. Stöhr, et al.. (2000). Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins. Nature. 405(6788). 767–769. 382 indexed citations
18.
Schöll, A., J. Stöhr, J. Lüning, et al.. (2000). Observation of Antiferromagnetic Domains in Epitaxial Thin Films. Science. 287(5455). 1014–1016. 279 indexed citations
19.
Sigg, H., H. Siegwart, Miriam Krieger, et al.. (1997). Tandem triple-pass Fabry–Perot interferometer for applications in the near infrared. Applied Optics. 36(22). 5355–5355. 3 indexed citations
20.
Patterson, B. D., et al.. (1995). Focused-ion beam modification of waveguide photonic devices. Microelectronic Engineering. 27(1-4). 347–350. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J.-D. Ganière Breakdown of academic impact, for papers by M. Hanke Breakdown of academic impact, for papers by M. den Hertog Breakdown of academic impact, for papers by Steffi Y. Woo Breakdown of academic impact, for papers by Vassilios Kapaklis Breakdown of academic impact, for papers by B. S. D. Ch. S. Varaprasad Breakdown of academic impact, for papers by Sophie Meuret Breakdown of academic impact, for papers by S. Cherifi Breakdown of academic impact, for papers by N. Bergeard Breakdown of academic impact, for papers by L. Calmels
Rankless by CCL
2026