M. Parenteau

619 total citations
19 papers, 532 citations indexed

About

M. Parenteau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Parenteau has authored 19 papers receiving a total of 532 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in M. Parenteau's work include Semiconductor Quantum Structures and Devices (10 papers), Advanced Semiconductor Detectors and Materials (8 papers) and Semiconductor materials and interfaces (7 papers). M. Parenteau is often cited by papers focused on Semiconductor Quantum Structures and Devices (10 papers), Advanced Semiconductor Detectors and Materials (8 papers) and Semiconductor materials and interfaces (7 papers). M. Parenteau collaborates with scholars based in Canada, China and United States. M. Parenteau's co-authors include C. Carlone, Shyam M. Khanna, Anouar Jorio, John Gerdes, N. L. Rowell, A. Houdayer, M. Aubin, Aiguo Wang, Denis Morris and P.F. Hinrichsen and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and physica status solidi (b).

In The Last Decade

M. Parenteau

18 papers receiving 516 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Parenteau Canada 9 466 327 187 58 34 19 532
Minoru Yoneta Japan 13 486 1.0× 397 1.2× 180 1.0× 72 1.2× 57 1.7× 66 575
Akira Obara Japan 11 380 0.8× 291 0.9× 235 1.3× 21 0.4× 45 1.3× 52 465
K. Reid United States 8 320 0.7× 168 0.5× 91 0.5× 37 0.6× 24 0.7× 22 381
K. Sánchez Spain 10 544 1.2× 498 1.5× 231 1.2× 51 0.9× 47 1.4× 16 637
Gérard Guillot France 10 274 0.6× 139 0.4× 136 0.7× 79 1.4× 11 0.3× 50 370
C. Llinarès France 14 356 0.8× 252 0.8× 159 0.9× 38 0.7× 8 0.2× 42 419
M. Pérotin France 10 391 0.8× 251 0.8× 157 0.8× 29 0.5× 15 0.4× 26 434
Baoxue Bo China 10 361 0.8× 156 0.5× 215 1.1× 31 0.5× 11 0.3× 80 422
E. Igumbor South Africa 11 254 0.5× 199 0.6× 166 0.9× 38 0.7× 16 0.5× 44 361
D.E. Ioannou United States 11 400 0.9× 77 0.2× 146 0.8× 30 0.5× 46 1.4× 41 439

Countries citing papers authored by M. Parenteau

Since Specialization
Citations

This map shows the geographic impact of M. Parenteau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Parenteau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Parenteau more than expected).

Fields of papers citing papers by M. Parenteau

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Parenteau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Parenteau. The network helps show where M. Parenteau may publish in the future.

Co-authorship network of co-authors of M. Parenteau

This figure shows the co-authorship network connecting the top 25 collaborators of M. Parenteau. A scholar is included among the top collaborators of M. Parenteau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Parenteau. M. Parenteau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Carlone, C., et al.. (2002). Radiation effects on heavily doped n-GaAs*. NPARC. 2. 183–188.
2.
Khanna, Shyam M., S. Charbonneau, P. G. Piva, M. Parenteau, & C. Carlone. (1998). Effects of 3 MeV proton irradiation on the excitonic lifetime in gallium arsenide. IEEE Transactions on Nuclear Science. 45(6). 2430–2435. 7 indexed citations
3.
Carlone, C., M. Parenteau, & Shyam M. Khanna. (1998). Gigaelectron-volt heavy ion irradiation of gallium arsenide. Journal of Applied Physics. 83(10). 5164–5170. 7 indexed citations
4.
Carlone, C., M. Parenteau, A. Houdayer, P.F. Hinrichsen, & J. Vincent. (1997). Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons. IEEE Transactions on Nuclear Science. 44(6). 1856–1861. 7 indexed citations
5.
Parenteau, M., C. Carlone, Denis Morris, & Shyam M. Khanna. (1997). Time-resolved spectroscopy of irradiated n-GaAs. IEEE Transactions on Nuclear Science. 44(6). 1849–1855. 12 indexed citations
6.
Jorio, Anouar, et al.. (1996). Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing. Journal of Applied Physics. 80(3). 1364–1369. 12 indexed citations
7.
Parenteau, M., et al.. (1995). Photoconductivity of gallium arsenide epitaxial layers. Journal of Applied Physics. 77(10). 5185–5190. 3 indexed citations
8.
Jorio, Anouar, C. Carlone, N. L. Rowell, A. Houdayer, & M. Parenteau. (1995). Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation. Materials Science and Engineering B. 35(1-3). 160–165. 2 indexed citations
9.
Khanna, Shyam M., Anouar Jorio, C. Carlone, et al.. (1995). Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide. IEEE Transactions on Nuclear Science. 42(6). 2095–2103. 23 indexed citations
10.
Carlone, C., et al.. (1994). Radiation induced carbon complexes in gallium arsenide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 90(1-4). 405–408. 4 indexed citations
11.
Jorio, Anouar, M. Parenteau, M. Aubin, et al.. (1994). A mobility study of the radiation induced order effect in gallium arsenide. IEEE Transactions on Nuclear Science. 41(6). 1937–1944. 30 indexed citations
12.
Jorio, Anouar, Aiguo Wang, M. Parenteau, et al.. (1994). Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide. Physical review. B, Condensed matter. 50(3). 1557–1566. 30 indexed citations
13.
Shi, Yi, et al.. (1994). Analysis of Free Exciton Properties in GaAs Epitaxial Layers with the Improved Model of Photoconductivity Spectra. physica status solidi (b). 186(1). 133–141. 1 indexed citations
14.
Jorio, Anouar, et al.. (1993). Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAs. Journal of Applied Physics. 74(4). 2310–2317. 30 indexed citations
15.
Khanna, Shyam M., et al.. (1993). Electron and neutron radiation-induced order effect in gallium arsenide. IEEE Transactions on Nuclear Science. 40(6). 1350–1359. 35 indexed citations
16.
Parenteau, M., C. Carlone, & Shyam M. Khanna. (1992). Damage coefficient associated with free exciton lifetime in GaAs irradiated with neutrons and electrons. Journal of Applied Physics. 71(8). 3747–3753. 16 indexed citations
17.
Khanna, Shyam M., et al.. (1991). The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs. IEEE Transactions on Nuclear Science. 38(6). 1145–1152. 5 indexed citations
18.
Parenteau, M., C. Carlone, M. Aubin, et al.. (1991). Effects of neutron and electron irradiation on the absorption edge of GaAs. Canadian Journal of Physics. 69(3-4). 324–328. 4 indexed citations
19.
Parenteau, M. & C. Carlone. (1990). Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors. Physical review. B, Condensed matter. 41(8). 5227–5234. 304 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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