M. Olmo

511 total citations
15 papers, 411 citations indexed

About

M. Olmo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Olmo has authored 15 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in M. Olmo's work include Silicon and Solar Cell Technologies (13 papers), Thin-Film Transistor Technologies (9 papers) and Semiconductor materials and interfaces (4 papers). M. Olmo is often cited by papers focused on Silicon and Solar Cell Technologies (13 papers), Thin-Film Transistor Technologies (9 papers) and Semiconductor materials and interfaces (4 papers). M. Olmo collaborates with scholars based in United States, Germany and United Kingdom. M. Olmo's co-authors include R. Falster, Marco Pagani, Karsten Bothe, John D. Murphy, V. V. Voronkov, K. F. Kelton, Mohammad Al-Amin, Pengfei Wei, Graham R. Fisher and P. Pichler and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Chemistry Chemical Physics.

In The Last Decade

M. Olmo

15 papers receiving 377 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Olmo United States 9 383 160 143 37 28 15 411
Stephan Brunken Germany 12 317 0.8× 284 1.8× 82 0.6× 21 0.6× 13 0.5× 21 370
R. Monna France 11 376 1.0× 166 1.0× 105 0.7× 35 0.9× 62 2.2× 58 411
J. E. Phillips United States 10 412 1.1× 346 2.2× 105 0.7× 23 0.6× 19 0.7× 43 442
S. Asher United States 12 640 1.7× 534 3.3× 205 1.4× 22 0.6× 33 1.2× 31 675
M.P.R. Panicker United States 4 367 1.0× 339 2.1× 95 0.7× 31 0.8× 27 1.0× 6 405
Jennifer Drayton United States 12 467 1.2× 397 2.5× 120 0.8× 19 0.5× 37 1.3× 46 505
C. Amory France 10 352 0.9× 359 2.2× 95 0.7× 19 0.5× 13 0.5× 14 419
A. Laades Germany 11 461 1.2× 183 1.1× 164 1.1× 22 0.6× 33 1.2× 34 486
R. Beaulieu United States 11 341 0.9× 298 1.9× 93 0.7× 11 0.3× 25 0.9× 20 373
Д. И. Курбатов Ukraine 13 264 0.7× 290 1.8× 57 0.4× 15 0.4× 20 0.7× 44 358

Countries citing papers authored by M. Olmo

Since Specialization
Citations

This map shows the geographic impact of M. Olmo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Olmo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Olmo more than expected).

Fields of papers citing papers by M. Olmo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Olmo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Olmo. The network helps show where M. Olmo may publish in the future.

Co-authorship network of co-authors of M. Olmo

This figure shows the co-authorship network connecting the top 25 collaborators of M. Olmo. A scholar is included among the top collaborators of M. Olmo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Olmo. M. Olmo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Olmo, M., J. Sánchez-Benı́tez, Esteban Urones‐Garrote, et al.. (2017). Effect of composition and coating on the interparticle interactions and magnetic hardness of MFe2O4 (M = Fe, Co, Zn) nanoparticles. Physical Chemistry Chemical Physics. 19(12). 8363–8372. 35 indexed citations
2.
Murphy, John D., Mohammad Al-Amin, Karsten Bothe, et al.. (2015). The effect of oxide precipitates on minority carrier lifetime in n-type silicon. Journal of Applied Physics. 118(21). 54 indexed citations
3.
Murphy, John D., Karsten Bothe, M. Olmo, V. V. Voronkov, & R. Falster. (2011). The effect of oxide precipitates on minority carrier lifetime in p-type silicon. Journal of Applied Physics. 110(5). 68 indexed citations
4.
Murphy, John D., et al.. (2011). Recombination at Oxide Precipitates in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 178-179. 205–210. 1 indexed citations
5.
Murphy, John D., Karsten Bothe, M. Olmo, V. V. Voronkov, & R. Falster. (2010). Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates. ECS Transactions. 33(11). 121–132. 7 indexed citations
6.
Sassella, A., et al.. (2003). Absorption coefficient of oxide precipitates in silicon wafers after different three-step annealing. Materials Science and Engineering B. 102(1-3). 247–250. 1 indexed citations
7.
Falster, R., et al.. (2001). Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon. Materials Science in Semiconductor Processing. 4(1-3). 23–26. 2 indexed citations
8.
Borghesi, A., et al.. (2000). Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon. Materials Science and Engineering B. 73(1-3). 149–153. 7 indexed citations
9.
Kelton, K. F., et al.. (1999). Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation. Journal of Applied Physics. 85(12). 8097–8111. 56 indexed citations
10.
11.
12.
Jacob, Mohan V., P. Pichler, H. Ryssel, et al.. (1997). Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 349–354. 15 indexed citations
13.
Falster, R., et al.. (1997). Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 123–128. 47 indexed citations
14.
Pagani, Marco, et al.. (1997). Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing. Applied Physics Letters. 70(12). 1572–1574. 40 indexed citations
15.
Falster, R., Marco Pagani, M. Olmo, et al.. (1997). Vacancy-Assisted Oxygen Precipitation Phenomena in Si. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 129–136. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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