M. Garter

1.3k total citations
16 papers, 1.1k citations indexed

About

M. Garter is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, M. Garter has authored 16 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 8 papers in Materials Chemistry. Recurrent topics in M. Garter's work include GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (8 papers) and ZnO doping and properties (4 papers). M. Garter is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (8 papers) and ZnO doping and properties (4 papers). M. Garter collaborates with scholars based in United States. M. Garter's co-authors include A. J. Steckl, R. Birkhahn, Jason Heikenfeld, Dong‐Seon Lee, James D. Scofield, Richard A. Jones, C. C. Baker, Chong H. Ahn, Daniel J. Sadler and Anthony L. Cook and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Journal of Selected Topics in Quantum Electronics.

In The Last Decade

M. Garter

16 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Garter United States	11	836	744	523	519	201	16	1.1k
D. K. Christen United States	20	1.0k 1.3×	445 0.6×	503 1.0×	156 0.3×	240 1.2×	50	1.3k
S. P. Pai India	17	739 0.9×	565 0.8×	592 1.1×	241 0.5×	252 1.3×	70	1.2k
R. H. Heffner United States	17	1.0k 1.2×	616 0.8×	1.1k 2.0×	159 0.3×	132 0.7×	36	1.5k
G. P. Yablonskii Belarus	15	365 0.4×	401 0.5×	261 0.5×	336 0.6×	296 1.5×	109	738
Andrea Gauzzi France	18	841 1.0×	714 1.0×	719 1.4×	232 0.4×	192 1.0×	112	1.4k
T. M. Uen Taiwan	19	464 0.6×	495 0.7×	515 1.0×	259 0.5×	210 1.0×	115	1.0k
Werner Bergbauer Germany	13	764 0.9×	545 0.7×	390 0.7×	235 0.5×	290 1.4×	21	900
R. N. Kyutt Russia	13	276 0.3×	412 0.6×	145 0.3×	337 0.6×	280 1.4×	95	738
Bastian Galler Germany	18	874 1.0×	470 0.6×	270 0.5×	588 1.1×	580 2.9×	30	1.2k
A. Kozanecki Poland	16	204 0.2×	908 1.2×	336 0.6×	710 1.4×	238 1.2×	124	1.1k

Countries citing papers authored by M. Garter

Since Specialization

Citations

This map shows the geographic impact of M. Garter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Garter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Garter more than expected).

Fields of papers citing papers by M. Garter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Garter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Garter. The network helps show where M. Garter may publish in the future.

Co-authorship network of co-authors of M. Garter

This figure shows the co-authorship network connecting the top 25 collaborators of M. Garter. A scholar is included among the top collaborators of M. Garter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Garter. M. Garter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Jones, Robert E., et al.. (2018). Transitioning large-diameter Type II Superlattice detector wafers to manufacturing. 10177. 20–20. 3 indexed citations

Forrai, D. P., et al.. (2018). T2SL manufacturing capability at L3 Space & Sensors Technology Center. Infrared Physics & Technology. 95. 164–169. 9 indexed citations

Steckl, A. J., Jason Heikenfeld, Dong‐Seon Lee, et al.. (2002). Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices. IEEE Journal of Selected Topics in Quantum Electronics. 8(4). 749–766. 235 indexed citations

Garter, M. & A. J. Steckl. (2002). Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN. IEEE Transactions on Electron Devices. 49(1). 48–54. 22 indexed citations

Steckl, A. J., Jason Heikenfeld, Dong‐Seon Lee, & M. Garter. (2001). Multiple color capability from rare earth-doped gallium nitride. Materials Science and Engineering B. 81(1-3). 97–101. 82 indexed citations

Steckl, A. J., et al.. (2000). Rare Earth Doped Gallium Nitride — Light Emission from Ultraviolet to Infrared. 10 indexed citations

Lee, Dong‐Seon, et al.. (2000). Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu. Applied Physics Letters. 76(12). 1525–1527. 73 indexed citations

Heikenfeld, Jason, Dong‐Seon Lee, M. Garter, R. Birkhahn, & A. J. Steckl. (2000). Low-voltage GaN:Er green electroluminescent devices. Applied Physics Letters. 76(11). 1365–1367. 33 indexed citations

Heikenfeld, Jason, M. Garter, Dong‐Seon Lee, R. Birkhahn, & A. J. Steckl. (1999). Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Applied Physics Letters. 75(9). 1189–1191. 242 indexed citations

10.

Birkhahn, R., M. Garter, & A. J. Steckl. (1999). Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates. Applied Physics Letters. 74(15). 2161–2163. 114 indexed citations

11.

Steckl, A. J., M. Garter, Dong‐Seon Lee, Jason Heikenfeld, & R. Birkhahn. (1999). Blue emission from Tm-doped GaN electroluminescent devices. Applied Physics Letters. 75(15). 2184–2186. 138 indexed citations

12.

Garter, M., James D. Scofield, R. Birkhahn, & A. J. Steckl. (1999). Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si. Applied Physics Letters. 74(2). 182–184. 71 indexed citations

13.

Garter, M., R. Birkhahn, A. J. Steckl, & James D. Scofield. (1999). Visible and Infrared Rare-Earth Activated Electroluminescence from Erbium Doped GaN. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 940–945. 2 indexed citations

14.

Garter, M., R. Birkhahn, A. J. Steckl, & James D. Scofield. (1998). Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN. MRS Proceedings. 537. 1 indexed citations

15.

Steckl, A. J., M. Garter, R. Birkhahn, & James D. Scofield. (1998). Green electroluminescence from Er-doped GaN Schottky barrier diodes. Applied Physics Letters. 73(17). 2450–2452. 83 indexed citations

16.

Sadler, Daniel J., et al.. (1997). Optical reflectivity of micromachined {111}-oriented silicon mirrors for optical input - output couplers. Journal of Micromechanics and Microengineering. 7(4). 263–269. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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