L.M. Gaggero‐Sager
Impact in
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- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Papers in
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- Semiconductor Quantum Structures and Devices 51
- Quantum and electron transport phenomena 46
- Surface and Thin Film Phenomena 16
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- GaN-based semiconductor devices and materials 11
- Co-authors
- I. Rodrı́guez-VargasM.E. Mora‐RamosR. Pérez‐ÁlvarezOutmane OubramVivechana AgarwalGerardo G. NaumisJ.C. Martı́nez-OrozcoD. A. Contreras‐Solorio
In The Last Decade
L.M. Gaggero‐Sager
97 papers receiving 689 citations
Peers
Comparison fields: 5 of 38
- Atomic and Molecular Physics, and Optics 626
- Condensed Matter Physics 91
- Materials Chemistry 284
- Electrical and Electronic Engineering 293
- Spectroscopy 65
Countries citing papers authored by L.M. Gaggero‐Sager
This map shows the geographic impact of L.M. Gaggero‐Sager's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.M. Gaggero‐Sager with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.M. Gaggero‐Sager more than expected).
Fields of papers citing papers by L.M. Gaggero‐Sager
This network shows the impact of papers produced by L.M. Gaggero‐Sager. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.M. Gaggero‐Sager. The network helps show where L.M. Gaggero‐Sager may publish in the future.
Co-authors
The 25 scholars most cited alongside L.M. Gaggero‐Sager, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 1 | |
| 2 | 2024 | 1 | |
| 3 | 2024 | 1 | |
| 4 | 2023 | 1 | |
| 5 | 2021 | 1 | |
| 6 | 2020 | 4 | |
| 7 | 2020 | 2 | |
| 8 | 2017 | 23 | |
| 9 | Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs | 2015 | 2 |
| 10 | Propiedades de transporte en el transistor δ-FET | 2014 | 1 |
| 11 | 2012 | 7 | |
| 12 | Tight-binding calculation of delta-doped field effect transistor | 2007 | 1 |
| 13 | 2005 | 2 | |
| 14 | Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs and Si | 2001 | 4 |
| 15 | 2001 | 2 | |
| 16 | Problems of condensed matter physics | 2000 | 1 |
| 17 | 2000 | 4 | |
| 18 | Electronic states in parabolic versus diffused quantum wells | 1998 | 1 |
| 19 | A simple model for atomic layer doped field-effect transistor (ALD-FET) electronic states | 1998 | 2 |
| 20 | Estructura electrónica de sistemas delta dopados tipo p | 1998 | 1 |
About L.M. Gaggero‐Sager
L.M. Gaggero‐Sager is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 100 papers that have together received 745 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (51 papers), Quantum and electron transport phenomena (46 papers), Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Surface and Thin Film Phenomena (16 papers), Graphene research and applications (15 papers), Silicon Nanostructures and Photoluminescence (13 papers) and GaN-based semiconductor devices and materials (11 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (626 citations), Condensed Matter Physics (91 citations), Materials Chemistry (284 citations), Electrical and Electronic Engineering (293 citations) and Spectroscopy (65 citations). L.M. Gaggero‐Sager has collaborated with scholars based in Mexico, Spain and Cuba. Frequent co-authors include I. Rodrı́guez-Vargas, M.E. Mora‐Ramos, R. Pérez‐Álvarez, Outmane Oubram, Vivechana Agarwal, Gerardo G. Naumis, J.C. Martı́nez-Orozco, D. A. Contreras‐Solorio, Oscar Sotolongo-Costa and V.R. Velasco. Their work appears in journals such as physica status solidi (b), Journal of Applied Physics, Surface Science, Scientific Reports and Physica B Condensed Matter.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.