Khang D. Pham

1.8k total citations
97 papers, 1.5k citations indexed

About

Khang D. Pham is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Khang D. Pham has authored 97 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Materials Chemistry, 35 papers in Electrical and Electronic Engineering and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Khang D. Pham's work include 2D Materials and Applications (47 papers), MXene and MAX Phase Materials (34 papers) and Graphene research and applications (18 papers). Khang D. Pham is often cited by papers focused on 2D Materials and Applications (47 papers), MXene and MAX Phase Materials (34 papers) and Graphene research and applications (18 papers). Khang D. Pham collaborates with scholars based in Vietnam, Russia and Australia. Khang D. Pham's co-authors include Nguyen N. Hieu, Huynh V. Phuc, Chuong V. Nguyen, Chương V. Nguyen, B. Amin, Tuan V. Vu, О.Y. Khyzhun, Peter S. Turner, C.A. Duque and Bui D. Hoi and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Khang D. Pham

95 papers receiving 1.5k citations

Peers

Khang D. Pham
Khang D. Pham
Citations per year, relative to Khang D. Pham Khang D. Pham (= 1×) peers Cheng Yang

Countries citing papers authored by Khang D. Pham

Since Specialization
Citations

This map shows the geographic impact of Khang D. Pham's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Khang D. Pham with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Khang D. Pham more than expected).

Fields of papers citing papers by Khang D. Pham

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Khang D. Pham. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Khang D. Pham. The network helps show where Khang D. Pham may publish in the future.

Co-authorship network of co-authors of Khang D. Pham

This figure shows the co-authorship network connecting the top 25 collaborators of Khang D. Pham. A scholar is included among the top collaborators of Khang D. Pham based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Khang D. Pham. Khang D. Pham is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pham, Khang D., et al.. (2025). First principles unveiling the metallic TaS2/GeC heterostructure as an anode material in sodium-ion batteries. RSC Advances. 15(21). 16484–16492. 3 indexed citations
2.
Vu, Tuan V., A. I. Kartamyshev, Minh D. Nguyen, et al.. (2024). First-principles insights on electronic and transport properties of novel ternary AlMX3 and quaternary Janus Al2M2X3Y3 (M= Ge, Sn; X/Y= S, Se, Te) monolayers. Materials Science in Semiconductor Processing. 181. 108590–108590. 3 indexed citations
3.
Nguyen, Son‐Tung, et al.. (2024). Computational investigations of the metal/semiconductor NbS2/boron phosphide van der Waals heterostructure: effects of an electric field. Dalton Transactions. 53(31). 13022–13029. 3 indexed citations
4.
Vu, Tuan V., Huynh V. Phuc, Sohail Ahmad, et al.. (2021). Outstanding elastic, electronic, transport and optical properties of a novel layered material C4F2: first-principles study. RSC Advances. 11(38). 23280–23287. 17 indexed citations
5.
Nguyen, Hong T. T., Tan Phat Dao, Chuong V. Nguyen, et al.. (2020). The characteristics of defective ZrS 2 monolayers adsorbed various gases on S-vacancies: A first-principles study. Superlattices and Microstructures. 140. 106454–106454. 25 indexed citations
6.
Vu, Tuan V., Khang D. Pham, Tri Nhut Pham, et al.. (2020). First-principles prediction of chemically functionalized InN monolayers: electronic and optical properties. RSC Advances. 10(18). 10731–10739. 20 indexed citations
7.
Pham, Khang D., Lam Van Tan, M. Idrees, et al.. (2020). Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures. New Journal of Chemistry. 44(35). 14964–14969. 11 indexed citations
8.
Pham, Khang D., et al.. (2019). Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure. Chemical Physics. 521. 92–99. 23 indexed citations
9.
Pham, Khang D., Doan Van Thuan, Le T.T. Phuong, et al.. (2019). Tunable electronic properties of InSe by biaxial strain: from bulk to single-layer. Materials Research Express. 6(11). 115002–115002. 11 indexed citations
10.
Pham, Khang D., Nguyen N. Hieu, Le T.T. Phuong, et al.. (2019). Electric field tuning of dynamical dielectric function in phosphorene. Chemical Physics Letters. 731. 136606–136606. 3 indexed citations
11.
Pham, Khang D., et al.. (2019). Phonon-assisted cyclotron resonance in Pöschl-Teller quantum well. Journal of Applied Physics. 126(12). 25 indexed citations
12.
Pham, Khang D., Long Giang Bạch, B. Amin, et al.. (2019). Tri-layered van der Waals heterostructures based on graphene, gallium selenide and molybdenum selenide. Journal of Applied Physics. 125(22). 19 indexed citations
13.
Pham, Khang D., Nguyen N. Hieu, Le Minh Bui, et al.. (2019). Strain engineering and electric field tunable electronic properties of Ti2CO2 MXene monolayer. Materials Research Express. 6(6). 65910–65910. 15 indexed citations
14.
Pham, Khang D., Trinh Duy Nguyen, Huynh V. Phuc, et al.. (2019). Strain and electric field engineering of band alignment in InSe/Ca(OH)2 heterostructure. Chemical Physics Letters. 732. 136649–136649. 6 indexed citations
15.
Pham, Khang D., Chuong V. Nguyen, Huynh V. Phuc, et al.. (2018). Ab-initio study of electronic and optical properties of biaxially deformed single-layer GeS. Superlattices and Microstructures. 120. 501–507. 25 indexed citations
16.
Pham, Khang D., Nguyen N. Hieu, Victor V. Ilyasov, et al.. (2018). First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure. Superlattices and Microstructures. 122. 570–576. 30 indexed citations
17.
Pham, Khang D., Huynh V. Phuc, Nguyen N. Hieu, Bui D. Hoi, & Chuong V. Nguyen. (2018). Electronic properties of GaSe/MoS2 and GaS/MoSe2 heterojunctions from first principles calculations. AIP Advances. 8(7). 17 indexed citations
18.
Pham, Khang D., Nguyen N. Hieu, Huynh V. Phuc, et al.. (2018). Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain. Applied Physics Letters. 113(17). 191 indexed citations
19.
Ilyasov, Victor V., Long Giang Bạch, Huynh V. Phuc, et al.. (2018). First-principles study of W, N, and O adsorption on TiB2(0001) surface with disordered vacancies. Superlattices and Microstructures. 123. 414–426. 11 indexed citations
20.
Ivanova, Elena P., et al.. (2004). Amplification of Protein Adsorption on Micro/Nanostructures for Microarray Applications. TechConnect Briefs. 1(2004). 95–98. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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