B. Amin

5.7k total citations
148 papers, 4.9k citations indexed

About

B. Amin is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. Amin has authored 148 papers receiving a total of 4.9k indexed citations (citations by other indexed papers that have themselves been cited), including 133 papers in Materials Chemistry, 55 papers in Electrical and Electronic Engineering and 28 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. Amin's work include 2D Materials and Applications (96 papers), MXene and MAX Phase Materials (83 papers) and Graphene research and applications (40 papers). B. Amin is often cited by papers focused on 2D Materials and Applications (96 papers), MXene and MAX Phase Materials (83 papers) and Graphene research and applications (40 papers). B. Amin collaborates with scholars based in Pakistan, Vietnam and China. B. Amin's co-authors include Iftikhar Ahmad, M. Idrees, Udo Schwingenschlögl, Nguyen N. Hieu, Huynh V. Phuc, Chương V. Nguyen, Chuong V. Nguyen, Muhammad Maqbool, H. U. Din and T. P. Kaloni and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

B. Amin

144 papers receiving 4.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Amin Pakistan 38 4.5k 2.2k 1.1k 629 353 148 4.9k
Tuan V. Vu Vietnam 35 3.9k 0.9× 2.3k 1.1× 970 0.9× 415 0.7× 490 1.4× 199 4.4k
A. Bafekry Iran 45 3.9k 0.9× 1.5k 0.7× 436 0.4× 603 1.0× 385 1.1× 88 4.2k
Hamad Rahman Jappor Iraq 43 3.1k 0.7× 1.5k 0.7× 479 0.4× 500 0.8× 220 0.6× 74 3.4k
Bakhtiar Ul Haq Saudi Arabia 40 3.7k 0.8× 2.9k 1.3× 1.8k 1.6× 282 0.4× 349 1.0× 209 4.6k
Sergei Piskunov Latvia 25 2.5k 0.6× 957 0.4× 1.1k 0.9× 544 0.9× 138 0.4× 115 2.9k
Pavle V. Radovanovic Canada 32 2.6k 0.6× 1.4k 0.7× 1.3k 1.1× 552 0.9× 159 0.5× 71 3.2k
Changtai Xia China 30 2.1k 0.5× 1.1k 0.5× 1.2k 1.1× 626 1.0× 351 1.0× 100 2.5k
Van An Dinh Japan 26 1.8k 0.4× 1.3k 0.6× 926 0.8× 552 0.9× 386 1.1× 104 2.8k
Jisang Hong South Korea 30 2.5k 0.6× 1.0k 0.5× 819 0.7× 330 0.5× 785 2.2× 171 3.2k
K. B. Modi India 28 2.1k 0.5× 960 0.4× 1.5k 1.3× 429 0.7× 182 0.5× 121 2.4k

Countries citing papers authored by B. Amin

Since Specialization
Citations

This map shows the geographic impact of B. Amin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Amin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Amin more than expected).

Fields of papers citing papers by B. Amin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Amin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Amin. The network helps show where B. Amin may publish in the future.

Co-authorship network of co-authors of B. Amin

This figure shows the co-authorship network connecting the top 25 collaborators of B. Amin. A scholar is included among the top collaborators of B. Amin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Amin. B. Amin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Haneef, Muhammad, et al.. (2025). Probing the role of silver and gold based double perovskite halide oxides for optoelectronic and photocatalytic applications. Materials Science in Semiconductor Processing. 190. 109367–109367. 2 indexed citations
2.
Khan, Umair, et al.. (2025). Tunable Schottky barriers in TaTe2-In2XY ((X≠Y)= S, Se, Te) van der Waals heterostructures via interface engineering. Journal of Physics and Chemistry of Solids. 207. 112832–112832. 1 indexed citations
3.
Khan, Umair, et al.. (2024). Tuning the electronic structure and Schottky barrier by NbX2 contact to MXY (M=Mo, W; (X≠Y) S, Se, Te) monolayer. Micro and Nanostructures. 187. 207765–207765. 4 indexed citations
4.
5.
Al‐Faiyz, Yasair S., Sehrish Sarfaraz, Muhammad Yar, et al.. (2023). Efficient Detection of Nerve Agents through Carbon Nitride Quantum Dots: A DFT Approach. Nanomaterials. 13(2). 251–251. 35 indexed citations
6.
7.
Pham, Khang D., Lam Van Tan, M. Idrees, et al.. (2020). Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures. New Journal of Chemistry. 44(35). 14964–14969. 11 indexed citations
8.
Nguyen, Hong T. T., Tuan V. Vu, Pham Văn Thinh, et al.. (2020). Computational insights into structural, electronic and optical characteristics of GeC/C2N van der Waals heterostructures: effects of strain engineering and electric field. RSC Advances. 10(5). 2967–2974. 11 indexed citations
9.
Hương, Phạm Thị Lan, M. Idrees, B. Amin, et al.. (2020). Electronic structure, optoelectronic properties and enhanced photocatalytic response of GaN–GeC van der Waals heterostructures: a first principles study. RSC Advances. 10(40). 24127–24133. 37 indexed citations
10.
Do, Thi-Nga, M. Idrees, Nguyễn Thị Thanh Bình, et al.. (2020). Type-I band alignment of BX–ZnO (X = As, P) van der Waals heterostructures as high-efficiency water splitting photocatalysts: a first-principles study. RSC Advances. 10(72). 44545–44550. 34 indexed citations
11.
Vu, Tuan V., Tan Phat Dao, M. Idrees, et al.. (2020). Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures. Physical Chemistry Chemical Physics. 22(15). 7952–7961. 24 indexed citations
12.
Le, P.T.T., Le Minh Bui, Nguyen N. Hieu, et al.. (2019). Tailoring electronic properties and Schottky barrier in sandwich heterostructure based on graphene and tungsten diselenide. Diamond and Related Materials. 94. 129–136. 18 indexed citations
13.
Pham, Khang D., Nguyen N. Hieu, Le Minh Bui, et al.. (2019). Strain engineering and electric field tunable electronic properties of Ti2CO2 MXene monolayer. Materials Research Express. 6(6). 65910–65910. 15 indexed citations
14.
Pham, Khang D., et al.. (2019). Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe2 heterostructure. Chemical Physics. 521. 92–99. 23 indexed citations
15.
Pham, Khang D., Long Giang Bạch, B. Amin, et al.. (2019). Tri-layered van der Waals heterostructures based on graphene, gallium selenide and molybdenum selenide. Journal of Applied Physics. 125(22). 19 indexed citations
16.
Pham, Khang D., Trinh Duy Nguyen, Huynh V. Phuc, et al.. (2019). Strain and electric field engineering of band alignment in InSe/Ca(OH)2 heterostructure. Chemical Physics Letters. 732. 136649–136649. 6 indexed citations
17.
Vu, Tuan V., Nguyen N. Hieu, Huynh V. Phuc, et al.. (2019). Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field. Applied Surface Science. 507. 145036–145036. 162 indexed citations
18.
Le, P.T.T., Nguyen N. Hieu, Le Minh Bui, et al.. (2018). Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field. Physical Chemistry Chemical Physics. 20(44). 27856–27864. 80 indexed citations
19.
Hieu, Nguyen N., Hường Thị Thu Phùng, Huynh V. Phuc, et al.. (2018). Electronic properties of WS2 and WSe2 monolayers with biaxial strain: A first-principles study. Chemical Physics. 519. 69–73. 90 indexed citations
20.
Pham, Khang D., Nguyen N. Hieu, Huynh V. Phuc, et al.. (2018). Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain. Applied Physics Letters. 113(17). 191 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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