Karl‐Magnus Persson

794 total citations
24 papers, 650 citations indexed

About

Karl‐Magnus Persson is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Karl‐Magnus Persson has authored 24 papers receiving a total of 650 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 5 papers in Materials Chemistry. Recurrent topics in Karl‐Magnus Persson's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Karl‐Magnus Persson is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Karl‐Magnus Persson collaborates with scholars based in Sweden, Singapore and Germany. Karl‐Magnus Persson's co-authors include Lars‐Erik Wernersson, Erik Lind, Mattias Borg, Sofia Johansson, Martin Berg, Mamidala Saketh Ram, Johannes Svensson, Mikael Egard, Claes Thelander and Anil W. Dey and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Applied Surface Science.

In The Last Decade

Karl‐Magnus Persson

22 papers receiving 639 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Karl‐Magnus Persson Sweden 16 589 241 156 89 38 24 650
Markus Hellenbrand Sweden 14 503 0.9× 176 0.7× 80 0.5× 54 0.6× 21 0.6× 32 535
Kuan‐Ming Hung Taiwan 12 320 0.5× 184 0.8× 240 1.5× 103 1.2× 40 1.1× 39 493
Gwang-Sik Kim South Korea 15 497 0.8× 153 0.6× 372 2.4× 218 2.4× 36 0.9× 27 665
Alexander Kloes Germany 17 1.0k 1.7× 173 0.7× 72 0.5× 95 1.1× 103 2.7× 122 1.1k
Minh Anh Luong France 13 252 0.4× 164 0.7× 162 1.0× 133 1.5× 24 0.6× 32 394
Saurabh Chopra United States 11 399 0.7× 63 0.3× 98 0.6× 176 2.0× 20 0.5× 27 432
Chun‐Yen Chang Taiwan 13 466 0.8× 72 0.3× 202 1.3× 70 0.8× 57 1.5× 63 515
Y. Yue United States 5 733 1.2× 135 0.6× 169 1.1× 43 0.5× 27 0.7× 8 807
Mengchuan Tian China 10 424 0.7× 139 0.6× 306 2.0× 56 0.6× 36 0.9× 13 534
Gongtao Wu China 11 226 0.4× 93 0.4× 286 1.8× 64 0.7× 15 0.4× 14 374

Countries citing papers authored by Karl‐Magnus Persson

Since Specialization
Citations

This map shows the geographic impact of Karl‐Magnus Persson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karl‐Magnus Persson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karl‐Magnus Persson more than expected).

Fields of papers citing papers by Karl‐Magnus Persson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karl‐Magnus Persson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karl‐Magnus Persson. The network helps show where Karl‐Magnus Persson may publish in the future.

Co-authorship network of co-authors of Karl‐Magnus Persson

This figure shows the co-authorship network connecting the top 25 collaborators of Karl‐Magnus Persson. A scholar is included among the top collaborators of Karl‐Magnus Persson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Karl‐Magnus Persson. Karl‐Magnus Persson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bohuslavskyi, Heorhii, et al.. (2025). Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration. Materials Science in Semiconductor Processing. 190. 109336–109336.
2.
Ram, Mamidala Saketh, et al.. (2022). The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties. Advanced Electronic Materials. 8(11).
3.
Persson, Karl‐Magnus, Mamidala Saketh Ram, Giulio D’Acunto, et al.. (2021). Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering. Applied Surface Science. 551. 149386–149386. 81 indexed citations
4.
Ram, Mamidala Saketh, Karl‐Magnus Persson, & Lars‐Erik Wernersson. (2021). Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration. Lund University Publications (Lund University). 6. 1–2. 1 indexed citations
5.
Ram, Mamidala Saketh, et al.. (2021). High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon. Nature Electronics. 4(12). 914–920. 37 indexed citations
6.
Persson, Karl‐Magnus, Mamidala Saketh Ram, & Lars‐Erik Wernersson. (2021). Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation. IEEE Journal of the Electron Devices Society. 9. 564–569. 15 indexed citations
7.
Persson, Anton E. O., et al.. (2020). Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization. Applied Physics Letters. 116(6). 33 indexed citations
8.
Persson, Karl‐Magnus, et al.. (2020). Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires. Advanced Electronic Materials. 6(6). 24 indexed citations
9.
Persson, Karl‐Magnus, Mamidala Saketh Ram, Mattias Borg, & Lars‐Erik Wernersson. (2019). Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM. Lund University Publications (Lund University). 91–92. 3 indexed citations
10.
Pitner, Gregory, Gage Hills, Juan Pablo Llinas, et al.. (2019). Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length. Nano Letters. 19(2). 1083–1089. 45 indexed citations
11.
Berg, Martin, et al.. (2015). Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si. Lund University Publications (Lund University). 31.2.1–31.2.4. 23 indexed citations
12.
Berg, Martin, Karl‐Magnus Persson, Jun Wu, et al.. (2014). InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers. Nanotechnology. 25(48). 485203–485203. 6 indexed citations
13.
Wallentin, Jesper, Markus Osterhoff, Robin N. Wilke, et al.. (2014). Hard X-ray Detection Using a Single 100 nm Diameter Nanowire. Nano Letters. 14(12). 7071–7076. 19 indexed citations
14.
Persson, Karl‐Magnus, Martin Berg, Henrik Sjöland, Erik Lind, & Lars‐Erik Wernersson. (2014). InAs nanowire MOSFET differential active mixer on Si‐substrate. Electronics Letters. 50(9). 682–683. 7 indexed citations
15.
Persson, Karl‐Magnus, Martin Berg, Jun Wu, et al.. (2013). Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates. IEEE Transactions on Electron Devices. 60(9). 2761–2767. 47 indexed citations
16.
Persson, Karl‐Magnus, B. Gunnar Malm, & Lars‐Erik Wernersson. (2013). Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 103(3). 20 indexed citations
17.
Egard, Mikael, Karl‐Magnus Persson, Mattias Borg, et al.. (2012). High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET. IEEE Electron Device Letters. 33(3). 369–371. 53 indexed citations
18.
Johansson, Sofia, Martin Berg, Karl‐Magnus Persson, & Erik Lind. (2012). A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs. IEEE Transactions on Electron Devices. 60(2). 776–781. 73 indexed citations
19.
Persson, Karl‐Magnus, Martin Berg, Mattias Borg, et al.. (2012). Vertical InAs nanowire MOSFETs with ID<inf>S</inf> = 1.34 mA/&#x00B5;m and g<inf>m</inf> = 1.19 mS/&#x00B5;m at VD<inf>S</inf> = 0.5 V. Lund University Publications (Lund University). 3 indexed citations
20.
Egard, Mikael, Sofia Johansson, Karl‐Magnus Persson, et al.. (2010). Vertical InAs Nanowire Wrap Gate Transistors withft> 7 GHz andfmax> 20 GHz. Nano Letters. 10(3). 809–812. 91 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Rankless by CCL
2026