Gwang-Sik Kim

783 total citations
27 papers, 665 citations indexed

About

Gwang-Sik Kim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Gwang-Sik Kim has authored 27 papers receiving a total of 665 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 9 papers in Biomedical Engineering. Recurrent topics in Gwang-Sik Kim's work include Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Gwang-Sik Kim is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Gwang-Sik Kim collaborates with scholars based in South Korea and United States. Gwang-Sik Kim's co-authors include Hyun‐Yong Yu, Seung‐Hwan Kim, Jiyoung Kim, June Park, Krishna C. Saraswat, Changhwan Shin, Jin‐Hong Park, Jeong‐Kyu Kim, Byung Jin Cho and Changhwan Choi and has published in prestigious journals such as ACS Nano, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Gwang-Sik Kim

27 papers receiving 662 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Gwang-Sik Kim South Korea 15 497 372 218 153 43 27 665
Kuan‐Ming Hung Taiwan 12 320 0.6× 240 0.6× 103 0.5× 184 1.2× 13 0.3× 39 493
Guilherme Migliato Marega Switzerland 9 467 0.9× 381 1.0× 73 0.3× 88 0.6× 56 1.3× 12 656
Manh‐Ha Doan South Korea 10 426 0.9× 476 1.3× 66 0.3× 117 0.8× 53 1.2× 24 643
Xinfan Huang China 17 615 1.2× 494 1.3× 82 0.4× 165 1.1× 79 1.8× 54 736
Jae‐Pil So South Korea 10 272 0.5× 258 0.7× 153 0.7× 162 1.1× 37 0.9× 18 515
Huading Song China 10 299 0.6× 581 1.6× 200 0.9× 161 1.1× 32 0.7× 18 744
Weijun Cheng China 10 285 0.6× 196 0.5× 90 0.4× 86 0.6× 48 1.1× 21 453
J. López-Vidrier Spain 16 610 1.2× 622 1.7× 95 0.4× 250 1.6× 31 0.7× 57 792
Che‐Yi Lin Taiwan 13 493 1.0× 436 1.2× 49 0.2× 114 0.7× 80 1.9× 20 660
Seung‐Geol Nam South Korea 12 671 1.4× 1.0k 2.8× 195 0.9× 234 1.5× 14 0.3× 20 1.3k

Countries citing papers authored by Gwang-Sik Kim

Since Specialization
Citations

This map shows the geographic impact of Gwang-Sik Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gwang-Sik Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gwang-Sik Kim more than expected).

Fields of papers citing papers by Gwang-Sik Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gwang-Sik Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gwang-Sik Kim. The network helps show where Gwang-Sik Kim may publish in the future.

Co-authorship network of co-authors of Gwang-Sik Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Gwang-Sik Kim. A scholar is included among the top collaborators of Gwang-Sik Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Gwang-Sik Kim. Gwang-Sik Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Gwang-Sik & Young Sik Kim. (2021). Efficient Implementation of Finite Field Operations in NIST PQC Rainbow. Information Security and Cryptology. 31(3). 527–532. 1 indexed citations
2.
Kim, Seung‐Hwan, et al.. (2019). Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure. ACS Applied Materials & Interfaces. 11(6). 6230–6237. 29 indexed citations
3.
Kim, Gwang-Sik, et al.. (2019). Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior. ACS Applied Materials & Interfaces. 11(23). 20949–20955. 21 indexed citations
4.
Kim, Seung‐Hwan, Gwang-Sik Kim, J. Park, et al.. (2018). Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement. ACS Applied Materials & Interfaces. 10(31). 26378–26386. 10 indexed citations
5.
6.
Kim, Seung‐Hwan, et al.. (2018). Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs. IEEE Transactions on Electron Devices. 65(8). 3136–3141. 6 indexed citations
7.
Kim, Seung‐Hwan, et al.. (2018). Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation. Applied Surface Science. 453. 48–55. 9 indexed citations
8.
Kim, Gwang-Sik, Seung‐Hwan Kim, June Park, et al.. (2016). Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack. ACS Applied Materials & Interfaces. 8(51). 35419–35425. 40 indexed citations
9.
Kim, Seung‐Hwan, Gwang-Sik Kim, Seyong Oh, Jin‐Hong Park, & Hyun‐Yong Yu. (2016). Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration. Journal of Nanoscience and Nanotechnology. 16(12). 12764–12767. 5 indexed citations
10.
Park, Yongkook, Hyung‐Youl Park, Dong‐Ho Kang, et al.. (2016). The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector. Journal of Nanoscience and Nanotechnology. 16(11). 11745–11749. 4 indexed citations
11.
Kim, Seung‐Hwan, Gwang-Sik Kim, Sun‐Woo Kim, et al.. (2016). Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6Plasma Treatment. IEEE Electron Device Letters. 37(4). 373–376. 15 indexed citations
12.
13.
Kim, Jeong‐Kyu, Sun‐Woo Kim, Gwang-Sik Kim, et al.. (2016). Effect of Metal Nitride on Contact Resist ivity of Metal- Interlayer- Ge Source/Drain in Sub- 10 nm ntype Ge FinFET. IEEE Electron Device Letters. 1–1. 2 indexed citations
14.
Kim, Gwang-Sik, Gwangwe Yoo, Seung‐Hwan Kim, et al.. (2016). Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure. IEEE Electron Device Letters. 1–1. 18 indexed citations
15.
Kim, Jeong‐Kyu, Gwang-Sik Kim, Hyunjae Lee, et al.. (2016). Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal–Interlayer–Semiconductor Source/Drain. IEEE Transactions on Electron Devices. 63(11). 4167–4172. 14 indexed citations
16.
Kim, Seung‐Hwan, Gwang-Sik Kim, Jeong‐Kyu Kim, et al.. (2015). Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors. IEEE Electron Device Letters. 36(9). 884–886. 14 indexed citations
17.
Kim, Gwang-Sik, Seung‐Hwan Kim, Jeong‐Kyu Kim, et al.. (2015). Surface Passivation of Germanium Using SF<sub>6</sub> Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET. IEEE Electron Device Letters. 36(8). 745–747. 20 indexed citations
18.
Kim, Gwang-Sik, Hyohyun Nam, Changhwan Shin, et al.. (2014). The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances. IEEE Electron Device Letters. 35(12). 1185–1187. 16 indexed citations
19.
Kim, Jeong‐Kyu, Gwang-Sik Kim, Changhwan Shin, et al.. (2014). Analytical Study of Interfacial Layer Doping Effect on Contact Resistivity in Metal-Interfacial Layer-Ge Structure. IEEE Electron Device Letters. 35(7). 705–707. 20 indexed citations
20.
Kim, Gwang-Sik, Jeong‐Kyu Kim, Seung‐Hwan Kim, et al.. (2014). Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact. IEEE Electron Device Letters. 35(11). 1076–1078. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Kuan‐Ming Hung Breakdown of academic impact, for papers by Guilherme Migliato Marega Breakdown of academic impact, for papers by Manh‐Ha Doan Breakdown of academic impact, for papers by Xinfan Huang Breakdown of academic impact, for papers by Jae‐Pil So Breakdown of academic impact, for papers by Huading Song Breakdown of academic impact, for papers by Weijun Cheng Breakdown of academic impact, for papers by J. López-Vidrier Breakdown of academic impact, for papers by Che‐Yi Lin Breakdown of academic impact, for papers by Seung‐Geol Nam
Rankless by CCL
2026