K. Maezawa
About
In The Last Decade
K. Maezawa
208 papers receiving 2.9k citations
Peers
Comparison fields: 5 of 42
- Electrical and Electronic Engineering 1.7k
- Condensed Matter Physics 1.5k
- Atomic and Molecular Physics, and Optics 1.2k
- Electronic, Optical and Magnetic Materials 847
- Materials Chemistry 307
Countries citing papers authored by K. Maezawa
This map shows the geographic impact of K. Maezawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Maezawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Maezawa more than expected).
Fields of papers citing papers by K. Maezawa
This network shows the impact of papers produced by K. Maezawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Maezawa. The network helps show where K. Maezawa may publish in the future.
Co-authorship network of co-authors of K. Maezawa
This figure shows the co-authorship network connecting the top 25 collaborators of K. Maezawa. A scholar is included among the top collaborators of K. Maezawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Maezawa. K. Maezawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 3 | |
| 3 | 2 | |
| 4 | 1 | |
| 5 | Current Collapse in GaN HEMTs | 2 |
| 6 | 63 | |
| 7 | Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs | 4 |
| 8 | 3 | |
| 9 | 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices | 8 |
| 10 | Highly Uniform Regrown In_ Ga_ As/AlAs/InAs Resonant Tunneling Diodes on In_ Ga_ As | 2 |
| 11 | 7 | |
| 12 | Effects of Simulated Annealing in the Resonant-Tunneling Resistive-Fuse Network for Early Vision | 0 |
| 13 | Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) | 5 |
| 14 | Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs | 14 |
| 15 | 10 | |
| 16 | 2 | |
| 17 | 16 | |
| 18 | 18 | |
| 19 | 5 | |
| 20 | A High-Speed Static Frequency Divider Employing n+Ge Gate AlGaAs/GaAs MISFETs | 4 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.