Behzad Ebrahimi

532 total citations
45 papers, 412 citations indexed

About

Behzad Ebrahimi is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Biomedical Engineering. According to data from OpenAlex, Behzad Ebrahimi has authored 45 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 4 papers in Hardware and Architecture and 3 papers in Biomedical Engineering. Recurrent topics in Behzad Ebrahimi's work include Advancements in Semiconductor Devices and Circuit Design (36 papers), Semiconductor materials and devices (28 papers) and Low-power high-performance VLSI design (26 papers). Behzad Ebrahimi is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (36 papers), Semiconductor materials and devices (28 papers) and Low-power high-performance VLSI design (26 papers). Behzad Ebrahimi collaborates with scholars based in Iran and United States. Behzad Ebrahimi's co-authors include Ali Afzali‐Kusha, Mehdi Saremi, Massoud Pedram, Mohammad Rashid Ansari, Saeed Mohammadi, Zainalabedin Navabi, Hamid Mahmoodi, Masoud Rostami, Hossein Aghababa and Omid Akbari and has published in prestigious journals such as IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Microelectronics Reliability and Superlattices and Microstructures.

In The Last Decade

Behzad Ebrahimi

43 papers receiving 394 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Behzad Ebrahimi Iran 12 401 50 32 16 12 45 412
Hanwool Jeong South Korea 13 466 1.2× 79 1.6× 77 2.4× 24 1.5× 6 0.5× 50 485
K. Joardar United States 9 391 1.0× 27 0.5× 36 1.1× 6 0.4× 3 0.3× 20 399
Toshiyuki Tsutsumi Japan 10 395 1.0× 78 1.6× 64 2.0× 9 0.6× 5 0.4× 63 430
Ping-Chuan Chiang Taiwan 12 440 1.1× 38 0.8× 48 1.5× 4 0.3× 5 0.4× 21 448
Chung-Hsun Lin United States 12 304 0.8× 21 0.4× 28 0.9× 3 0.2× 6 0.5× 26 322
Chetan Kumar Dabhi India 10 297 0.7× 25 0.5× 19 0.6× 5 0.3× 5 0.4× 34 325
N. Aruna Kumari India 12 278 0.7× 13 0.3× 58 1.8× 27 1.7× 21 1.8× 28 312
Toshiharu Nagumo Japan 12 532 1.3× 32 0.6× 35 1.1× 5 0.3× 3 0.3× 38 549
T. Noguchi Japan 9 233 0.6× 47 0.9× 46 1.4× 25 1.6× 2 0.2× 26 247
L. Vendrame Italy 12 277 0.7× 33 0.7× 28 0.9× 6 0.4× 8 0.7× 35 294

Countries citing papers authored by Behzad Ebrahimi

Since Specialization
Citations

This map shows the geographic impact of Behzad Ebrahimi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Behzad Ebrahimi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Behzad Ebrahimi more than expected).

Fields of papers citing papers by Behzad Ebrahimi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Behzad Ebrahimi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Behzad Ebrahimi. The network helps show where Behzad Ebrahimi may publish in the future.

Co-authorship network of co-authors of Behzad Ebrahimi

This figure shows the co-authorship network connecting the top 25 collaborators of Behzad Ebrahimi. A scholar is included among the top collaborators of Behzad Ebrahimi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Behzad Ebrahimi. Behzad Ebrahimi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ebrahimi, Behzad, et al.. (2024). Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performance. Integration. 100. 102294–102294. 2 indexed citations
2.
Ebrahimi, Behzad, et al.. (2023). Accurate and Compact Approximate 4:2 Compressors with GDI Structure. Circuits Systems and Signal Processing. 42(7). 4148–4169. 2 indexed citations
3.
Akbari, Omid, et al.. (2023). Efficient approximate multipliers utilizing compact and low-power compressors for error-resilient applications. AEU - International Journal of Electronics and Communications. 174. 155039–155039. 10 indexed citations
4.
Ebrahimi, Behzad, et al.. (2022). Implementing Real-Time Low-Power Audio Effect with FPGA. 13–16.
5.
Akbari, Omid, et al.. (2022). BEAD: Bounded error approximate adder with carry and sum speculations. Integration. 88. 353–361. 2 indexed citations
6.
Ebrahimi, Behzad, et al.. (2022). Single-Ended 8T SRAM cell with high SNM and low power/energy consumption. International Journal of Electronics. 110(10). 1733–1755. 6 indexed citations
7.
Ebrahimi, Behzad, et al.. (2022). FinFET based ultra-low power 3T GC-eDRAM with very high retention time in sub-22 nm. Analog Integrated Circuits and Signal Processing. 113(1). 27–39. 2 indexed citations
8.
Ebrahimi, Behzad, et al.. (2021). Single-Ended 10T SRAM Cell with High Yield and Low Standby Power. Circuits Systems and Signal Processing. 40(7). 3479–3499. 22 indexed citations
9.
Ebrahimi, Behzad, et al.. (2021). A 1‐GHz GC‐eDRAM in 7‐nm FinFET with static retention time at 700 mV for ultra‐low power on‐chip memory applications. International Journal of Circuit Theory and Applications. 50(2). 417–426. 2 indexed citations
10.
Ebrahimi, Behzad, et al.. (2021). HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network. Journal of Circuits Systems and Computers. 30(15). 1 indexed citations
11.
Ebrahimi, Behzad, et al.. (2020). A single-ended low leakage and low voltage 10T SRAM cell with high yield. Analog Integrated Circuits and Signal Processing. 105(2). 263–274. 28 indexed citations
12.
Moaiyeri, Mohammad Hossein, et al.. (2019). A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology. Journal of Computational Electronics. 18(2). 519–526. 18 indexed citations
13.
Ebrahimi, Behzad, et al.. (2013). An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. Microelectronics Reliability. 53(5). 670–675. 3 indexed citations
14.
Ebrahimi, Behzad, et al.. (2012). An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. Journal of Zhejiang University SCIENCE C. 13(1). 58–70. 5 indexed citations
15.
Ebrahimi, Behzad, et al.. (2012). Low-power and robust SRAM cells based on asymmetric FinFET structures. 41–45. 1 indexed citations
16.
Aghababa, Hossein, et al.. (2012). G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems. IEICE Electronics Express. 9(10). 881–887. 13 indexed citations
17.
Saremi, Mehdi, et al.. (2010). Process variation study of Ground Plane SOI MOSFET. 66–69. 28 indexed citations
18.
Ebrahimi, Behzad, Hossein Aghababa, & Ali Afzali‐Kusha. (2010). Analytical modeling of read stability metric of SRAM cell in nanoscale era. 1–4. 1 indexed citations
19.
Ebrahimi, Behzad & Ali Afzali‐Kusha. (2009). Realistic CNFET based SRAM cell design for better write stability. 14–18. 6 indexed citations
20.
Ebrahimi, Behzad & Ali Afzali‐Kusha. (2009). NBTI tolerant 4T double-gate SRAM design. 221–224. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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