Hogyoung Kim

1.0k total citations
89 papers, 892 citations indexed

About

Hogyoung Kim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Hogyoung Kim has authored 89 papers receiving a total of 892 indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 53 papers in Atomic and Molecular Physics, and Optics and 47 papers in Condensed Matter Physics. Recurrent topics in Hogyoung Kim's work include Semiconductor materials and devices (48 papers), GaN-based semiconductor devices and materials (47 papers) and Semiconductor materials and interfaces (41 papers). Hogyoung Kim is often cited by papers focused on Semiconductor materials and devices (48 papers), GaN-based semiconductor devices and materials (47 papers) and Semiconductor materials and interfaces (41 papers). Hogyoung Kim collaborates with scholars based in South Korea, United States and Australia. Hogyoung Kim's co-authors include Byung Joon Choi, Dongwook Kim, Keun Man Song, T. Sands, Haeri Kim, Vijay Rawat, Chang Su Kim, Eric A. Stach, Sungjin Jo and Sangho Kim and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hogyoung Kim

85 papers receiving 847 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hogyoung Kim South Korea 16 562 410 359 290 222 89 892
Shui-Jinn Wang Taiwan 18 787 1.4× 636 1.6× 321 0.9× 133 0.5× 240 1.1× 102 1.1k
Tak Jeong South Korea 17 376 0.7× 453 1.1× 436 1.2× 109 0.4× 246 1.1× 58 872
R. Paszkiewicz Poland 14 365 0.6× 284 0.7× 355 1.0× 208 0.7× 169 0.8× 133 727
Huolin Huang China 14 632 1.1× 472 1.2× 436 1.2× 105 0.4× 389 1.8× 70 946
Tae-Yeon Seong South Korea 18 557 1.0× 510 1.2× 146 0.4× 168 0.6× 199 0.9× 52 788
Ing‐Song Yu Taiwan 16 372 0.7× 306 0.7× 148 0.4× 114 0.4× 284 1.3× 60 762
Sylwia Gierałtowska Poland 17 562 1.0× 558 1.4× 117 0.3× 109 0.4× 203 0.9× 57 822
Hyun S. Kum United States 14 565 1.0× 900 2.2× 148 0.4× 201 0.7× 268 1.2× 41 1.2k
Yuping Jia China 20 384 0.7× 656 1.6× 384 1.1× 99 0.3× 403 1.8× 78 1.1k
Xiaojun Weng United States 19 540 1.0× 754 1.8× 346 1.0× 242 0.8× 265 1.2× 35 1.1k

Countries citing papers authored by Hogyoung Kim

Since Specialization
Citations

This map shows the geographic impact of Hogyoung Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hogyoung Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hogyoung Kim more than expected).

Fields of papers citing papers by Hogyoung Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hogyoung Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hogyoung Kim. The network helps show where Hogyoung Kim may publish in the future.

Co-authorship network of co-authors of Hogyoung Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Hogyoung Kim. A scholar is included among the top collaborators of Hogyoung Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hogyoung Kim. Hogyoung Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Hogyoung. (2024). A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes. Transactions on Electrical and Electronic Materials. 25(2). 141–152. 8 indexed citations
2.
Kim, Hogyoung, et al.. (2022). Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO 2 /ZnO interlayers. Physica Scripta. 97(3). 35805–35805. 1 indexed citations
3.
Kim, Hogyoung, et al.. (2022). Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition. Journal of the Korean Physical Society. 81(3). 241–246. 4 indexed citations
4.
Kim, Hogyoung. (2021). Control and understanding of metal contacts to β-Ga2O3 single crystals: a review. SN Applied Sciences. 4(1). 33 indexed citations
5.
Byun, Jongmin, et al.. (2020). Dilatometric Analysis of the Sintering Behavior of Bi2Te3 Thermoelectric Powders. Archives of Metallurgy and Materials. 1117–1120. 4 indexed citations
6.
Kim, Hogyoung, et al.. (2019). Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes. MATERIALS TRANSACTIONS. 61(1). 88–93. 5 indexed citations
7.
Kim, Hogyoung, et al.. (2019). Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review. Korean Journal of Materials Research. 29(9). 567–577. 3 indexed citations
8.
Kim, Hogyoung, et al.. (2019). Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(4). 14 indexed citations
9.
Kim, Hogyoung, et al.. (2019). Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC. Optik. 184. 527–532. 5 indexed citations
10.
Kim, Hogyoung, et al.. (2018). Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN. Nanoscale Research Letters. 13(1). 232–232. 20 indexed citations
11.
Kim, Hogyoung, et al.. (2018). Effect of Atomic Layer Deposited AlN Layer on Pt/4H-SiC Schottky Diodes. Transactions on Electrical and Electronic Materials. 19(4). 235–240. 3 indexed citations
12.
Kim, Hogyoung, et al.. (2018). Improved interfacial properties of thermal atomic layer deposited AlN on GaN. Vacuum. 159. 379–381. 21 indexed citations
13.
Kim, Hogyoung, et al.. (2017). Tuning electrical properties of Au/n-InP junctions by inserting atomic layer deposited Al2O3 layer. Vacuum. 144. 256–260. 4 indexed citations
14.
Kim, Hogyoung, et al.. (2013). Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes. Vacuum. 101. 92–97. 25 indexed citations
15.
Song, Keun Man & Hogyoung Kim. (2012). Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures. Japanese Journal of Applied Physics. 51(9R). 92101–92101. 5 indexed citations
16.
Song, Keun Man & Hogyoung Kim. (2012). A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN. Japanese Journal of Applied Physics. 51(5R). 51002–51002. 6 indexed citations
17.
Song, Keun Man, Jong‐Min Kim, Bong Kyun Kang, et al.. (2011). Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN. Applied Surface Science. 258(8). 3565–3570. 7 indexed citations
18.
Phark, S. H., et al.. (2011). Characterization of Pt/a-Plane GaN Schottky Contacts Using Conductive Atomic Force Microscopy. Journal of Nanoscience and Nanotechnology. 11(2). 1413–1416. 1 indexed citations
19.
Kim, Hogyoung, Haeri Kim, & Dongwook Kim. (2010). Silver Schottky contacts to a-plane bulk ZnO. Journal of Applied Physics. 108(7). 32 indexed citations
20.
Kim, Hogyoung, et al.. (2009). The Effects of Growth Temperature and Substrate Tilt Angle on GalnP/GaAs Tandem Solar Cells. JSTS Journal of Semiconductor Technology and Science. 9(2). 91–97. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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