J. M. Zhou

536 total citations
42 papers, 441 citations indexed

About

J. M. Zhou is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J. M. Zhou has authored 42 papers receiving a total of 441 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 11 papers in Condensed Matter Physics. Recurrent topics in J. M. Zhou's work include Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (11 papers) and Quantum and electron transport phenomena (7 papers). J. M. Zhou is often cited by papers focused on Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (11 papers) and Quantum and electron transport phenomena (7 papers). J. M. Zhou collaborates with scholars based in China, Sweden and Japan. J. M. Zhou's co-authors include Mats Andersson, Jan-Eric Ståhl, Harry Walter, Hong‐Wei Hou, Yasutomo Segawa, Y. Aoyagi, S. Namba, Q. Huang, Wei Feng and Hongsong Chen and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. M. Zhou

41 papers receiving 420 citations

Peers

J. M. Zhou

EEE

AMPO

CMP

Hoon Jeong South Korea

Jeffrey Mileham United States

K. Kugimiya Japan

Akinobu Kanda Japan

G. Augustine United States

H. Kanai Japan

Matthew T. Moneck United States

M. Matsuzaki Japan

Cornel Bozdog United States

Andrea Severino Italy

Hoon Jeong South Korea

J. M. Zhou

326 ×1.3

EEE

168 ×0.8

AMPO

143 ×0.9

85 ×0.7

CMP

37 ×0.3

Citations per year, relative to J. M. Zhou J. M. Zhou (= 1×) peers Hoon Jeong

Countries citing papers authored by J. M. Zhou

Since Specialization

Citations

This map shows the geographic impact of J. M. Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Zhou more than expected).

Fields of papers citing papers by J. M. Zhou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Zhou. The network helps show where J. M. Zhou may publish in the future.

Co-authorship network of co-authors of J. M. Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of J. M. Zhou. A scholar is included among the top collaborators of J. M. Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. M. Zhou. J. M. Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yin, Z., et al.. (2023). Optical Fiber Temperature Sensor Based on PDMS-Filled Air-Cavity Fabry–Perot Structure. IEEE Transactions on Instrumentation and Measurement. 72. 1–6. 6 indexed citations

Zhang, Yan, J. M. Zhou, Xin Liu, et al.. (2023). Anti-Inflammatory and Proangiogenic Metabolites from the Hadal Trench-Derived Fungus Acremonium dichromosporum YP-213. Marine Drugs. 22(1). 25–25. 4 indexed citations

Bushlya, Volodymyr, Fredrik Schultheiss, Оleksandr Gutnichenko, J. M. Zhou, & Jan-Eric Ståhl. (2015). On the Analytical Representation of Chip Area and Tool Geometry when Oblique Turning with Round Tools. Part 2: Variation of Tool Geometry Along the Edge Line. Procedia CIRP. 31. 423–428. 3 indexed citations

Zhou, J. M. & Mats Andersson. (2008). Machinability of Abrasion Resistance Cast Iron with PCBN Cutting Tools. Materials and Manufacturing Processes. 23(5). 506–512. 9 indexed citations

Zhou, J. M. & Mats Andersson. (2007). Effects of Lubricant Condition and Tool Wear in Hard Turning of Novel-Abrasion-Resistance (N-AR) Cast Iron. Materials and Manufacturing Processes. 22(7-8). 865–870. 2 indexed citations

Zheng, Xiantong, Y.T. Wang, Zhihong Feng, et al.. (2003). Method for measurement of lattice parameter of cubic GaN layers on GaAs (001). Journal of Crystal Growth. 250(3-4). 345–348. 38 indexed citations

Zhou, J. M., Harry Walter, Mats Andersson, & Jan-Eric Ståhl. (2002). Effect of chamfer angle on wear of PCBN cutting tool. International Journal of Machine Tools and Manufacture. 43(3). 301–305. 93 indexed citations

Zhou, J. M., J. E. Reddic, James M. Karlinsey, et al.. (2002). Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy. Applied Surface Science. 202(3-4). 131–138. 9 indexed citations

Chen, H, et al.. (2001). Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by Molecular Beam Epitaxy. Journal of Crystal Growth. 227-228. 420–424. 4 indexed citations

10.

Zq, Li, Hsin‐Fu Liu, Li Wan, et al.. (2000). Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy. Journal of Crystal Growth. 210(4). 811–814. 9 indexed citations

11.

Sun, Jiaming, et al.. (2000). Two-wave mixing in Stark geometry photorefractive quantum wells under a magnetic field. Applied Physics Letters. 76(16). 2185–2187. 1 indexed citations

12.

Huang, Q., et al.. (1999). Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells. Applied Physics Letters. 75(4). 504–506. 3 indexed citations

13.

Peng, Changsi, Hongsong Chen, Zhen-Sheng Zhao, et al.. (1999). Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers. Journal of Crystal Growth. 201-202. 530–533. 18 indexed citations

14.

Huang, Qiufeng, et al.. (1997). Theoretical study of magneto-excitons in the [111] GaAs quantum well. Journal of Physics Condensed Matter. 9(29). 6257–6265. 2 indexed citations

15.

Feng, Wei, et al.. (1996). Low-temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices. Applied Physics Letters. 68(6). 812–814. 8 indexed citations

16.

Chen, Hongsong, et al.. (1996). TEM study of the structure of GaAs on vicinal Si (001) surface grown by MBE. Journal of Materials Science. 31(3). 829–833. 1 indexed citations

17.

Feng, Wei, et al.. (1996). Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells. Applied Physics Letters. 69(23). 3513–3515. 7 indexed citations

18.

Shan, W., Xiang Fang, Di Li, et al.. (1991). Photomodulated transmission spectroscopy of the intersubband transitions in strainedIn1−xGaxAs/GaAs multiple quantum wells under hydrostatic pressure. Physical review. B, Condensed matter. 43(18). 14615–14620. 18 indexed citations

19.

Hou, Hong‐Wei, et al.. (1990). Pressure dependence of photoluminescence inInxGa1−xAs/GaAs strained quantum wells. Physical review. B, Condensed matter. 42(5). 2926–2931. 20 indexed citations

20.

Hou, Hong‐Wei, N. Miura, Yasutomo Segawa, et al.. (1990). Photoluminescence intensity of InGaAs/GaAs Strained quantum wells under high magnetic fields. Solid State Communications. 74(8). 687–691. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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