J. Koga

2.6k total citations
83 papers, 2.0k citations indexed

About

J. Koga is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Koga has authored 83 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in J. Koga's work include Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). J. Koga is often cited by papers focused on Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). J. Koga collaborates with scholars based in Japan, South Korea and United States. J. Koga's co-authors include Akira Toriumi, Ken Uchida, Shinichi Takagi, A. Kinoshita, Tomoyuki Numata, R. Ohba, S. Takagi, Shin-ichi Takagi, Hiroshi Watanabe and Naoharu Sugiyama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

J. Koga

80 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Koga Japan 24 1.9k 596 337 292 50 83 2.0k
Bahniman Ghosh India 21 1.2k 0.7× 284 0.5× 320 0.9× 203 0.7× 151 3.0× 116 1.4k
Somsak Panyakeow Thailand 14 493 0.3× 518 0.9× 177 0.5× 342 1.2× 41 0.8× 119 711
J.R. Watling United Kingdom 16 813 0.4× 250 0.4× 124 0.4× 192 0.7× 7 0.1× 70 972
P. Zeitzoff United States 19 1.4k 0.7× 159 0.3× 132 0.4× 223 0.8× 15 0.3× 80 1.5k
Sébastien Frégonèse France 15 816 0.4× 160 0.3× 134 0.4× 308 1.1× 18 0.4× 90 874
J. Gautier France 14 594 0.3× 162 0.3× 114 0.3× 153 0.5× 23 0.5× 49 653
S.L. Rommel United States 16 697 0.4× 403 0.7× 173 0.5× 102 0.3× 10 0.2× 52 774
Pouya Hashemi United States 18 839 0.4× 317 0.5× 306 0.9× 194 0.7× 10 0.2× 80 981
Masiar Sistani Austria 16 496 0.3× 242 0.4× 297 0.9× 157 0.5× 8 0.2× 60 614
K. Iwadate Japan 11 500 0.3× 261 0.4× 276 0.8× 108 0.4× 18 0.4× 26 619

Countries citing papers authored by J. Koga

Since Specialization
Citations

This map shows the geographic impact of J. Koga's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Koga with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Koga more than expected).

Fields of papers citing papers by J. Koga

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Koga. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Koga. The network helps show where J. Koga may publish in the future.

Co-authorship network of co-authors of J. Koga

This figure shows the co-authorship network connecting the top 25 collaborators of J. Koga. A scholar is included among the top collaborators of J. Koga based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Koga. J. Koga is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Nishi, Yoshifumi, Y. Tsuchiya, Atsuhiro Kinoshita, Takashi Yamauchi, & J. Koga. (2007). Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology. 103710. 135–138. 13 indexed citations
3.
Tsuchiya, Y., et al.. (2006). Physical mechanism of work function modulation due to impurity pileup at Ni-FUSI/SiO(N) interface. 52. 622–625. 1 indexed citations
4.
Takagi, Shin-ichi, Tomohisa Mizuno, Tetsuo Tezuka, et al.. (2005). Sub-band structure engineering for advanced CMOS channels. Solid-State Electronics. 49(5). 684–694. 63 indexed citations
5.
Takagi, Shinichi, Tomohisa Mizuno, Tetsuo Tezuka, et al.. (2004). Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs. 3.3.1–3.3.4. 77 indexed citations
6.
Koga, J., et al.. (2004). Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer. Japanese Journal of Applied Physics. 43(4S). 1699–1699. 6 indexed citations
7.
8.
Uchida, Ken‐ichi, J. Koga, R. Ohba, & Akira Toriumi. (2003). Programmable single-electron transistor logic for low-power intelligent Si LSI. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 1. 206–460. 10 indexed citations
9.
Koga, J., et al.. (2003). Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer. IEEE Electron Device Letters. 24(5). 354–356. 17 indexed citations
10.
Uchida, Ken, Hiroshi Watanabe, J. Koga, A. Kinoshita, & Shinichi Takagi. (2003). Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. 8–13. 22 indexed citations
11.
Toriumi, Akira, J. Koga, Hideki Satake, & Akiko Ohata. (2002). Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs. 847–850. 16 indexed citations
12.
Koga, J., R. Ohba, Ken Uchida, & Akira Toriumi. (2002). Silicon single-electron memory and logic devices for room temperature operation. 7.1.1–7.1.4. 7 indexed citations
13.
Takagi, Shinichi, J. Koga, & Akira Toriumi. (2002). Subband structure engineering for performance enhancement of Si MOSFETs. 219–222. 59 indexed citations
14.
15.
Koga, J. & Akira Toriumi. (2001). Silicon Planar Esaki Diode Operating at Room Temperature. IEICE Transactions on Electronics. 84(8). 1051–1055.
16.
Toriumi, Akira, Ken‐ichi Uchida, J. Koga, & R. Ohba. (2001). Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors. IEICE Transactions on Electronics. 84(8). 1066–1070. 3 indexed citations
17.
Uchida, Ken‐ichi, et al.. (2001). Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film. Journal of Applied Physics. 90(7). 3551–3557. 34 indexed citations
18.
Uchida, Ken‐ichi, J. Koga, Akiko Ohata, & Akira Toriumi. (1999). Silicon single-electron tunnelling device interfaced with a CMOS inverter. Nanotechnology. 10(2). 198–200. 6 indexed citations
19.
Ohata, Akiko, Akira Toriumi, & J. Koga. (1994). A study of quantum interference fluctuations in deep sub-μm MOSFET's under cryogenic conditions. IEEE Transactions on Electron Devices. 41(11). 2107–2111. 1 indexed citations
20.
Mizuno, Tomohisa, et al.. (1991). High Performance Shallow Junction Well Transistor (SJET). 109–110. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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