J. Holleman

868 citations

79 papers · 636 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
Materials Chemistry
- Silicon Nanostructures and Photoluminescence

Papers in

Electrical and Electronic Engineering 71
- Semiconductor materials and devices 39
- Thin-Film Transistor Technologies 34
- Silicon and Solar Cell Technologies 16
Materials Chemistry 31
- Silicon Nanostructures and Photoluminescence 21

Co-authors: Jurriaan Schmitz P.H. Woerlee Alexey Y. Kovalgin Chris R. Kleijn C. J. Hoogendoorn Hans Wallinga Cora Salm Ihor Brunets
Journals: Journal of The Electrochemical Society (14 papers)IEEE Electron Device Letters (4 papers)Journal of Applied Physics (3 papers)Surface and Coatings Technology (3 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Netherlands Germany Romania

In The Last Decade

J. Holleman

72 papers receiving 607 citations

Peers

Countries citing papers authored by J. Holleman

Since Specialization

Citations

This map shows the geographic impact of J. Holleman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Holleman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Holleman more than expected).

Fields of papers citing papers by J. Holleman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Holleman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Holleman. The network helps show where J. Holleman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Holleman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Holleman Line = papers co-authored together J. Holleman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low-Temperature Fabricated TFTs on Polysilicon Stripes IEEE Transactions on Electron Devices ·Ihor Brunets, J. Holleman, Alexey Y. Kovalgin, 魏津, Jurriaan Schmitz	2009	12
2	Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence Physica E Low-dimensional Systems and Nanostructures ·T. Arguirov, Teimuraz Mchedlidze, M. Kittler, Manfred Reiche, Margaux Lambrecht, Thai Thanh Hoang Thi, J. Holleman, Jurriaan Schmitz	2008	1
3	Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes IEEE Transactions on Electron Devices ·Z. V. Stepanov, J. Holleman, 香織諸戸, Jurriaan Schmitz, Teimuraz Mchedlidze, T. Arguirov, M. Kittler	2007	20
4	Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD Surface and Coatings Technology ·魏津, Alexey Y. Kovalgin, Ihor Brunets, Antonius A. I. Aarnink, J. Holleman, R.A.M. Wolters, Jurriaan Schmitz	2007	20
5	Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs IEEE Electron Device Letters ·Yong-Hwan Jeong, R.J.E. Hueting, G.D.J. Smit, Thai Thanh Hoang Thi, J. Holleman, Jurriaan Schmitz	2007	3
6	Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines ECS Transactions ·Ihor Brunets, J. Holleman, Alexey Y. Kovalgin, Mo Renfu, 魏津, Paul Heron, Jurriaan Schmitz	2006	4
7	A high efficiency lateral light emitting device on SOI University of Twente Research Information ·Thai Thanh Hoang Thi, 香織諸戸, J. Holleman, V. Zieren, 乔慧蕾, Jurriaan Schmitz	2005	1
8	Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source Journal of The Electrochemical Society ·John Poulgrain, J. Holleman, Hans Wallinga, P.H. Woerlee	2004	23
9	Replication Molds Having Nanometer-Scale Shape Control Fabricated by Means of Oxidation and Etching Journal of Nanoscience and Nanotechnology ·Oceanside Blvd, Alexey Y. Kovalgin, J. Holleman, Juergen Brügger	2002	15
10	Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550°C C. Cobianu, Carmine F Vilardi, M. Modreanu, D. Dascǎlu, J. Holleman	2002	1
11	Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector 香織諸戸, J. Holleman, Erwin Berenschot, Niels R. Tas, Albert van den Berg	2002	3
12	Room temperature SiO₂ films deposited by multipolar ECR PECVD Journal de Physique IV (Proceedings) ·John Poulgrain, Alexey Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga	2001	3
13	Modeling of light-emission spectra measured on silicon nanometer-scale diode antifuses Journal of Applied Physics ·N. Akil, Vincent Houtsma, 香織諸戸, J. Holleman, V. Zieren, Naseem G Farzana, P.H. Woerlee, Albert van den Berg, Hans Wallinga	2000	39
14	Stress-induced leakage current in p/sup +/ poly MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material IEEE Electron Device Letters ·Vincent Houtsma, J. Holleman, Cora Salm, F. Widdershoven, P.H. Woerlee	1999	9
15	Characterisation of Silicon Oxide films deposited by means of ECR PECVD University of Twente Research Information ·吴懋清, Yunita Dwi Tamara, J. Holleman, Robert F. H. Dekker, P.H. Woerlee, Hans Wallinga	1999	0
16	Formation of Shallow Junctions by Dopant Diffusion from Spin-On Glass University of Twente Research Information ·Marilyn García Gallego, Nguyễn Đức Chiến, J. Holleman, P.H. Woerlee	1998	1
17	Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors MRS Proceedings ·R.E.I. Schropp, C. Scullard, C.H.M. van der Werf, J. Holleman, H. Meiling	1996	1
18	Electrical Characteristics of B + and BF 2 + Implanted Poly-Si and Poly-Ge x Si 1-x as Gate Material for Sub-0.25μm Applications Data Archiving and Networked Services (DANS) ·Cora Salm, سید ابراهیم قدسی, J. Holleman, P.H. Woerlee	1995	1
19	On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂ Journal de Physique IV (Proceedings) ·NORMAN J. LASS, J.H. Klootwijk, C. Cobianu, J. Holleman, Муромцев Виктор Владимирович	1995	1
20	Transport Phenomena in Tungsten LPCVD in a Single‐Wafer Reactor Journal of The Electrochemical Society ·Chris R. Kleijn, C. J. Hoogendoorn, Bubba-B, J. Holleman, Macelina Antonia Silva Louzada	1991	48

About J. Holleman

J. Holleman is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Instrumentation, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 79 papers that have together received 636 indexed citations. Recurring topics across this work include Semiconductor materials and devices (39 papers), Thin-Film Transistor Technologies (34 papers), Silicon Nanostructures and Photoluminescence (21 papers), Silicon and Solar Cell Technologies (16 papers), Nanowire Synthesis and Applications (12 papers), Semiconductor materials and interfaces (8 papers), Copper Interconnects and Reliability (8 papers) and Metal and Thin Film Mechanics (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (537 citations), Materials Chemistry (295 citations), Electronic, Optical and Magnetic Materials (79 citations), Atomic and Molecular Physics, and Optics (125 citations) and Mechanics of Materials (94 citations). J. Holleman has collaborated with scholars based in Netherlands, Germany and Romania. Frequent co-authors include Jurriaan Schmitz, P.H. Woerlee, Alexey Y. Kovalgin, Chris R. Kleijn, C. J. Hoogendoorn, Hans Wallinga, Cora Salm, Ihor Brunets, R.A.M. Wolters and Antonius A. I. Aarnink. Their work appears in journals such as Journal of The Electrochemical Society, IEEE Electron Device Letters, Journal of Applied Physics, Surface and Coatings Technology and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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